Equivalent & Substitute Parts Reference for MBRTA60035L

Part Overview

The MBRTA60035L is a diode array manufactured by GeneSiC Semiconductor under the Diodes, Rectifiers category. It features a 1 Pair Common Cathode Schottky configuration, supporting a maximum DC reverse voltage of 35 V and an average rectified current of 300A per diode. The chassis mount Three Tower package and its fast recovery characteristics (≤500ns for >200mA Io) position it for high current, low-voltage rectification applications.

This part is designated as Obsolete in inventory systems. For applications requiring continued availability, it's necessary to find alternative models strictly matching the electrical and mechanical parameters provided.

Key Parameters

Parameter	MBRTA60035L
Manufacturer	GeneSiC Semiconductor
Category	Diodes, Rectifiers
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	35 V
Current - Average Rectified (Io) (per Diode)	300A
Voltage - Forward (Vf) (Max) @ If	600 mV @ 300 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Three Tower
Supplier Device Package	Three Tower

Substitute Part Grouping Explanation

Substitute parts are selected strictly based on the following key parameters:

Diode configuration: 1 Pair Common Cathode
Technology: Schottky
Maximum DC reverse voltage: 35 V
Average rectified current per diode
Forward voltage at specified current
Fast recovery speed
Operating junction temperature range
Mounting type and package: Chassis Mount, Three Tower

Only models matching these characteristics are considered proper substitutes within the Diodes, Rectifiers category.

Parameter Comparison

Parameter	MBRTA60035L	MBRT30035
Manufacturer	GeneSiC Semiconductor	GeneSiC Semiconductor
Category	Diodes, Rectifiers	Diodes, Rectifiers
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode
Technology	Schottky	Schottky
Voltage - DC Reverse (Vr) (Max)	35 V	35 V
Current - Average Rectified (Io) (per Diode)	300A	150A
Voltage - Forward (Vf) (Max) @ If	600 mV @ 300 A	750 mV @ 150 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C
Mounting Type	Chassis Mount	Chassis Mount
Package / Case	Three Tower	Three Tower
Supplier Device Package	Three Tower	Three Tower

Engineering Selection Recommendations

The MBRTA60035L is listed as Obsolete. The MBRT30035 is Active and possesses RoHS compliance and an unlimited Moisture Sensitivity Level (MSL 1). Both share identical manufacturer, technology, configuration, voltage, speed, mounting type, and package parameters. Engineering selection of MBRT30035 as a substitute is allowable strictly within the provided electrical and mechanical limits for the Diodes, Rectifiers category.

Frequently Asked Questions (FAQ)

Q1: Are MBRT30035 and MBRTA60035L pin/package compatible?
A1: Both use the Three Tower chassis mount device package and share identical package specifications.

Q2: Does the MBRT30035 maintain the Schottky and fast recovery characteristics required for MBRTA60035L substitution?
A2: Yes. Both devices utilize Schottky technology and support fast recovery (≤500ns, >200mA Io).

Q3: What are the critical substitution criteria for this product category?
A3: The key criteria are diode configuration, technology, maximum DC reverse voltage, average rectified current, forward voltage, speed, operating temperature, mounting type, and package compatibility.

Q4: Is there a difference in electrical performance between MBRTA60035L and MBRT30035?
A4: MBRT30035 supports a maximum of 150A average rectified current per diode with a 750mV forward voltage at 150A, while MBRTA60035L supports 300A at 600mV forward voltage.

Q5: What compliance requirements are met by MBRT30035?
A5: MBRT30035 is RoHS Compliant and rated Moisture Sensitivity Level 1 (Unlimited).

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