MBRH20030L Schottky Diode Equivalent & Substitute Parts

Part Overview

The MBRH20030L is a 30V, 200A Schottky rectifier diode manufactured by GeneSiC Semiconductor in a D-67 chassis mount package. This component is classified as obsolete, indicating that the original part is no longer in active production. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing maintenance and repair operations for systems utilizing this diode.

Substiute Parts

MBRH20030L
GeneSiC SemiconductorIn Stock: 815MBRH20030L Datasheet
MBRH20030L
Current Part
MBRH20030
GeneSiC SemiconductorIn Stock: 1116MBRH20030 Datasheet
MBRH20030
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 30 V
Current - Average Rectified (Io) 200 A
Voltage - Forward (Vf) (Max) @ If 580 mV @ 200 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io) ns
Current - Reverse Leakage @ Vr 3 mA @ 30 V mA
Mounting Type Chassis Mount
Package / Case D-67
Operating Temperature - Junction -55°C to 150°C °C
Technology Schottky

Substitute Part Grouping Explanation

Substitution eligibility for the MBRH20030L is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200 A
  • Technology: Schottky
  • Mounting Type: Chassis Mount
  • Package / Case: D-67

Allowable Variation Parameters:

  • Voltage - Forward (Vf) (Max) @ If: Substitute parts may exhibit higher forward voltage drop within acceptable operating margins
  • Current - Reverse Leakage @ Vr: Substitute parts may exhibit higher reverse leakage current within acceptable operating margins
  • Product Status: Active status is preferred for ongoing availability, though obsolete parts may serve as temporary alternatives

The MBRH20030 qualifies as a substitute part because it maintains identical voltage rating, current rating, technology type, mounting configuration, and package specification. Variations in forward voltage and reverse leakage are within acceptable engineering tolerances for this component category.

Parameter Comparison

Parameter MBRH20030L (Main Part) MBRH20030 (Substitute) Compatibility
Manufacturer GeneSiC Semiconductor GeneSiC Semiconductor Identical
Voltage - DC Reverse (Vr) (Max) 30 V 30 V Identical
Current - Average Rectified (Io) 200 A 200 A Identical
Voltage - Forward (Vf) (Max) @ If 580 mV @ 200 A 650 mV @ 200 A Substitute higher by 70 mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Identical
Current - Reverse Leakage @ Vr 3 mA @ 30 V 5 mA @ 20 V Substitute higher by 2 mA (measured at lower voltage)
Mounting Type Chassis Mount Chassis Mount Identical
Package / Case D-67 D-67 Identical
Operating Temperature - Junction -55°C to 150°C -55°C to 150°C Identical
Product Status Obsolete Active Substitute is in active production
RoHS Status Not specified RoHS Compliant Substitute meets RoHS requirements

Engineering Selection Recommendations

Primary Substitute: MBRH20030

The MBRH20030 is the direct substitute for the obsolete MBRH20030L. Both parts are manufactured by GeneSiC Semiconductor and share identical electrical ratings and mechanical specifications. The MBRH20030 is currently in active production status, ensuring long-term availability and supply chain continuity.

Key Advantages of MBRH20030:

  • Active product status provides reliable sourcing for current and future applications
  • RoHS Compliant certification meets modern regulatory requirements
  • Identical voltage and current ratings ensure direct functional equivalence
  • Same D-67 chassis mount package maintains mechanical compatibility
  • Fast recovery Schottky technology specification is preserved

Parameter Considerations: The MBRH20030 exhibits a forward voltage drop of 650 mV at 200 A, compared to 580 mV for the MBRH20030L. This 70 mV increase results in marginally higher power dissipation in the substitute part. Thermal management design should account for this difference in applications operating at maximum rated current.

The reverse leakage current of the MBRH20030 is specified as 5 mA at 20 V, compared to 3 mA at 30 V for the MBRH20030L. This difference is within acceptable limits for Schottky diode applications and does not preclude substitution.

Frequently Asked Questions (FAQ)

Q: Can MBRH20030 be used as a direct replacement for MBRH20030L in existing designs?

A: Yes. The MBRH20030 is a direct substitute. Both parts maintain identical voltage ratings (30 V), current ratings (200 A), package type (D-67), and mounting configuration (Chassis Mount). The parts are electrically and mechanically compatible for circuit board and chassis integration.

Q: What is the significance of the higher forward voltage in MBRH20030?

A: The MBRH20030 exhibits 650 mV forward voltage at 200 A, compared to 580 mV for MBRH20030L. This 70 mV difference increases power dissipation by approximately 14 W at maximum rated current. Thermal design calculations should incorporate this value. For most applications operating below maximum current, the impact is negligible.

Q: Why is MBRH20030L classified as obsolete?

A: Obsolete status indicates that GeneSiC Semiconductor has discontinued production of the MBRH20030L. The MBRH20030 serves as the active replacement in the product line, offering improved availability and compliance with current regulatory standards.

Q: Does the RoHS Compliance of MBRH20030 affect compatibility?

A: No. RoHS Compliance is an environmental and regulatory certification that indicates the substitute part meets restrictions on hazardous substances. This certification does not affect electrical or mechanical compatibility and is beneficial for applications subject to RoHS requirements.

Q: Are there any package or pinout differences between MBRH20030L and MBRH20030?

A: No. Both parts use the D-67 chassis mount package with identical mechanical specifications. Pinout and mounting configuration are identical, enabling direct substitution without circuit board or chassis modifications.

Q: What is the reverse leakage current difference, and does it matter?

A: MBRH20030L specifies 3 mA reverse leakage at 30 V, while MBRH20030 specifies 5 mA at 20 V. The difference is within normal manufacturing variation for Schottky diodes and does not impact circuit performance in standard rectification applications.

Q: Can MBRH20030L and MBRH20030 be used interchangeably in parallel configurations?

A: Yes. When multiple diodes are paralleled for current sharing, the identical voltage and current ratings ensure balanced current distribution. The slight differences in forward voltage and reverse leakage do not create compatibility issues in parallel operation.

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