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MBRF30H100CTH Equivalent & Substitute Parts
Part Overview
The MBRF30H100CTH is a Schottky diode array manufactured by onsemi, configured as 1 pair common cathode with a maximum reverse voltage of 100 V and average rectified current of 15 A per diode. The device is packaged in a TO-220-3 Full Pack through-hole configuration and operates at a maximum junction temperature of 175°C.
This part is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this diode array configuration.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Diode Configuration | 1 Pair Common Cathode | — |
| Technology | Schottky | — |
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) (per Diode) | 15 | A |
| Voltage - Forward (Vf) (Max) @ If | 800 | mV @ 15 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Current - Reverse Leakage @ Vr | 4.5 | µA @ 100 V |
| Operating Temperature - Junction (Max) | 175 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-3 Full Pack | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the MBRF30H100CTH is determined by strict equivalence across the following critical parameters:
Electrical Parameters (Must Match):
- Diode configuration: 1 Pair Common Cathode
- Technology: Schottky
- Maximum reverse voltage (Vr): 100 V
- Average rectified current (Io): 15 A per diode
- Forward voltage (Vf): 800 mV or lower @ 15 A
- Reverse leakage current: ≤ 4.5 µA @ 100 V
- Recovery speed: Fast Recovery ≤ 500ns, > 200mA (Io)
Mechanical Parameters (Must Match):
- Mounting type: Through Hole
- Package / Case: TO-220-3 Full Pack
Compliance Parameters:
- RoHS3 Compliant
- REACH Unaffected
Substitute parts are classified as direct equivalents when all electrical and mechanical parameters are identical. Parts with minor variations in forward voltage or reverse leakage within acceptable tolerances are classified as similar equivalents.
Parameter Comparison
| Parameter | MBRF30H100CTH (Main) | MBRF30H100CTG (Direct) | MBRF30H100CT-E3/45 (Similar) |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Vishay General Semiconductor - Diodes Division |
| Product Status | Obsolete | Active | Active |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Technology | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V |
| Current - Average Rectified (Io) (per Diode) | 15 A | 15 A | 15 A |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 15 A | 800 mV @ 15 A | 820 mV @ 15 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 4.5 µA @ 100 V | 4.5 µA @ 100 V | 5 µA @ 100 V |
| Operating Temperature - Junction (Max) | 175°C | 175°C | 175°C |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package | TO-220-3 FULLPACK | TO-220FP | ITO-220AB |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
MBRF30H100CTG (Direct Equivalent - Recommended Primary Substitute)
The MBRF30H100CTG is a direct electrical and mechanical equivalent to the MBRF30H100CTH. Both parts share identical electrical specifications across all critical parameters: 100 V reverse voltage, 15 A average rectified current, 800 mV forward voltage at 15 A, and 4.5 µA reverse leakage current. The MBRF30H100CTG is manufactured by onsemi and maintains the same SWITCHMODE™ series designation. This part is currently in active production status with 16,500 units in stock, providing superior supply chain availability compared to the obsolete MBRF30H100CTH. Both parts are ROHS3 compliant and REACH unaffected. The MBRF30H100CTG is the preferred substitute for direct replacement in existing designs.
MBRF30H100CT-E3/45 (Similar Equivalent - Alternative Substitute)
The MBRF30H100CT-E3/45 is manufactured by Vishay General Semiconductor - Diodes Division and provides functional equivalence with minor parameter variations. This part maintains the same 100 V reverse voltage, 15 A average rectified current, and fast recovery speed characteristics. The forward voltage specification is 820 mV at 15 A, representing a 20 mV increase over the MBRF30H100CTH. The reverse leakage current is specified at 5 µA at 100 V, a 0.5 µA increase from the main part. The MBRF30H100CT-E3/45 features an isolated tab configuration (ITO-220AB package) compared to the standard TO-220-3 Full Pack, which may provide thermal or isolation benefits in specific applications. This part is currently in active production with 6,168 units in stock. The MBRF30H100CT-E3/45 is suitable for applications where the slightly higher forward voltage and reverse leakage are within acceptable design margins and where the isolated tab feature provides functional advantage.
Both substitute parts are ROHS3 compliant and REACH unaffected, maintaining regulatory compliance with the original MBRF30H100CTH.
Frequently Asked Questions (FAQ)
Q: Can the MBRF30H100CTG be used as a direct replacement for the MBRF30H100CTH?
A: Yes. The MBRF30H100CTG is a direct equivalent. Both parts share identical electrical specifications (100 V reverse voltage, 15 A average rectified current, 800 mV forward voltage, 4.5 µA reverse leakage) and mechanical configuration (TO-220-3 Full Pack through-hole). The MBRF30H100CTG is manufactured by onsemi and is currently in active production, making it the primary substitute for the obsolete MBRF30H100CTH.
Q: What are the differences between the MBRF30H100CTG and MBRF30H100CT-E3/45?
A: Both parts meet the core electrical requirements of 100 V reverse voltage and 15 A average rectified current. The MBRF30H100CTG is manufactured by onsemi with 800 mV forward voltage and 4.5 µA reverse leakage. The MBRF30H100CT-E3/45 is manufactured by Vishay with 820 mV forward voltage and 5 µA reverse leakage. The MBRF30H100CT-E3/45 features an isolated tab configuration (ITO-220AB) compared to the standard TO-220-3 Full Pack of the MBRF30H100CTG. Selection between these parts depends on whether the slightly higher forward voltage and reverse leakage of the Vishay part are acceptable for the application and whether the isolated tab feature is required.
Q: Are there any packaging differences between the substitute parts?
A: The MBRF30H100CTG uses the TO-220FP supplier device package, while the MBRF30H100CT-E3/45 uses the ITO-220AB supplier device package with an isolated tab feature. Both are through-hole mounted TO-220-3 Full Pack configurations. The isolated tab in the MBRF30H100CT-E3/45 may provide thermal isolation or electrical isolation benefits depending on application requirements. Pin compatibility and PCB layout should be verified for the specific application.
Q: Do all substitute parts meet RoHS and REACH compliance requirements?
A: Yes. The MBRF30H100CTG and MBRF30H100CT-E3/45 are both ROHS3 compliant and REACH unaffected, maintaining regulatory compliance with the original MBRF30H100CTH.
Q: What is the operating temperature range for each part?
A: The MBRF30H100CTH and MBRF30H100CTG both specify a maximum junction temperature of 175°C. The MBRF30H100CT-E3/45 specifies an operating temperature range of −65°C to 175°C, providing a defined minimum operating temperature specification not provided for the onsemi parts.
Q: Which substitute part should be selected for new designs?
A: For new designs requiring direct electrical equivalence with the MBRF30H100CTH, the MBRF30H100CTG is the recommended choice. It is manufactured by onsemi, maintains identical electrical specifications, is in active production with strong inventory availability, and requires no design modifications. The MBRF30H100CT-E3/45 is suitable for applications where the isolated tab feature provides functional advantage and where the minor increases in forward voltage and reverse leakage are acceptable within design margins.
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