MBRF3080CTHC0G Equivalent & Substitute Parts

Part Overview

The MBRF3080CTHC0G is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as 1 pair common cathode with 80V reverse voltage rating and 30A average rectified current per diode. This component is designed for through-hole mounting in TO-220-3 Full Pack, Isolated Tab package format and is qualified to AEC-Q101 automotive standards. The part maintains active product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges for Schottky diode arrays in this package category.

Substiute Parts

MBRF3080CTHC0G

Taiwan Semiconductor CorporationIn Stock: 1170MBRF3080CTHC0G Datasheet

Current PartRFQ

VFT3080C-E3/4W

Vishay General Semiconductor - Diodes DivisionIn Stock: 2954VFT3080C-E3/4W Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for Schottky diode arrays in the TO-220-3 Full Pack, Isolated Tab package is determined by the following critical parameters:

Mandatory Matching Parameters:

• Diode Configuration: 1 Pair Common Cathode
• Technology: Schottky
• Voltage - DC Reverse (Vr) (Max): 80 V
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Operating Temperature Range: -55°C to 150°C minimum
• RoHS Status: ROHS3 Compliant

Performance Parameters Subject to Application Requirements:

• Current - Average Rectified (Io) (per Diode)
• Voltage - Forward (Vf) (Max)
• Current - Reverse Leakage @ Vr
• Speed characteristics

The VFT3080C-E3/4W meets all mandatory matching parameters. Differences in current rating (15A versus 30A) and forward voltage characteristics represent design trade-offs that must be evaluated against specific circuit requirements.

Parameter Comparison

Engineering Selection Recommendations

MBRF3080CTHC0G is the primary selection for applications requiring 30A average rectified current per diode with automotive-grade qualification (AEC-Q101). This part is active in production status with full ROHS3 compliance and maintains the lowest reverse leakage specification at 200 µA @ 80V.

VFT3080C-E3/4W is a valid substitute for applications with current requirements of 15A or less per diode. This part is also active in production status and ROHS3 compliant. The TMBS® series designation indicates Vishay's optimized Schottky technology. The forward voltage specification of 820 mV @ 15A is lower than the main part, reflecting the reduced current rating. Reverse leakage is specified at 700 µA @ 80V, which is higher than the main part.

Selection between these parts depends on circuit current requirements. The MBRF3080CTHC0G supports higher current density, while the VFT3080C-E3/4W offers lower forward voltage drop at its rated current level. Both parts maintain identical reverse voltage rating, temperature range, and package configuration.

Frequently Asked Questions (FAQ)

Q: Can VFT3080C-E3/4W be used in place of MBRF3080CTHC0G in all applications?

A: No. The VFT3080C-E3/4W is rated for 15A average rectified current per diode, while the MBRF3080CTHC0G is rated for 30A. Substitution is valid only for applications where the circuit current requirement does not exceed 15A per diode. Exceeding this rating will result in component failure.

Q: What is the significance of the different forward voltage specifications?

A: The MBRF3080CTHC0G specifies 940 mV @ 30A, while the VFT3080C-E3/4W specifies 820 mV @ 15A. These values are measured at their respective rated currents and reflect the different current-handling capabilities. Forward voltage drop increases with current in Schottky diodes. Direct comparison at different current levels is not valid.

Q: Are both parts suitable for automotive applications?

A: The MBRF3080CTHC0G carries AEC-Q101 automotive qualification. The VFT3080C-E3/4W does not list automotive qualification in the provided specifications. Applications requiring automotive-grade components should use the MBRF3080CTHC0G.

Q: What is the difference in reverse leakage current between these parts?

A: The MBRF3080CTHC0G specifies 200 µA @ 80V, while the VFT3080C-E3/4W specifies 700 µA @ 80V. Lower reverse leakage is generally preferable in applications sensitive to leakage current. This difference may be significant in precision analog circuits or low-power applications.

Q: Are the packages physically identical?

A: Both parts use TO-220-3 Full Pack, Isolated Tab package format with through-hole mounting. Physical dimensions and pin configurations are compatible. Mechanical substitution is valid from a package perspective.

Q: What is the TMBS® designation on the VFT3080C-E3/4W?

A: TMBS® is Vishay's trademark for their optimized Schottky diode technology. This designation indicates the part belongs to Vishay's TMBS® product line, which features specific performance characteristics within the Schottky diode category.

Q: Can I use the MBRF3080CTHC0G in applications designed for 15A operation?

A: Yes. The MBRF3080CTHC0G is rated for 30A and can operate at lower current levels. Using a higher-rated component in a lower-current application does not create compatibility issues. However, this approach may result in unnecessary cost if the VFT3080C-E3/4W meets the application requirements.