MBRF3080CT Equivalent & Substitute Parts

Part Overview

The MBRF3080CT is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode arrangement in a TO-220-3 Full Pack with isolated tab. This component is rated for 80 V DC reverse voltage with 30 A average rectified current per diode and operates across a junction temperature range of -55°C to 150°C. The part is currently Active in product status and maintains full RoHS3 compliance. Substitute parts are identified when equivalent electrical and mechanical specifications are required due to inventory constraints, supply chain considerations, or application-specific performance parameters.

Substiute Parts

MBRF3080CT
Taiwan Semiconductor CorporationIn Stock: 2530MBRF3080CT Datasheet
MBRF3080CT
Current Part
VFT3080C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 2954VFT3080C-E3/4W Datasheet
VFT3080C-E3/4W
Similar

Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 80 V
Current - Average Rectified (Io) (per Diode) 30 A
Voltage - Forward (Vf) (Max) @ If 940 mV @ 30 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 80 V
Operating Temperature - Junction -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MBRF3080CT is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Parameters:

  • Diode Configuration: 1 Pair Common Cathode
  • Technology: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Operating Temperature - Junction: -55°C to 150°C
  • RoHS Status: ROHS3 Compliant

Current Rating Consideration: The MBRF3080CT is rated for 30 A average rectified current per diode. Substitute parts with lower current ratings (such as 15 A) operate within the same voltage and thermal envelope but with reduced current capacity. Such substitutes are applicable only in applications where the circuit current demand does not exceed the substitute part's rated current specification.

The VFT3080C-E3/4W from Vishay General Semiconductor meets all mandatory equivalence parameters with the exception of current rating, which is specified at 15 A per diode.

Parameter Comparison

Parameter MBRF3080CT (Taiwan Semiconductor) VFT3080C-E3/4W (Vishay)
Manufacturer Taiwan Semiconductor Corporation Vishay General Semiconductor - Diodes Division
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 30 A 15 A
Voltage - Forward (Vf) (Max) @ If 940 mV @ 30 A 820 mV @ 15 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 80 V 700 µA @ 80 V
Operating Temperature - Junction -55°C to 150°C -55°C to 150°C
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active

Engineering Selection Recommendations

Both the MBRF3080CT and VFT3080C-E3/4W maintain Active product status and full RoHS3 compliance, ensuring long-term availability and regulatory conformance. The primary distinction between these parts is the current rating specification.

MBRF3080CT Selection Criteria: Select the MBRF3080CT when circuit design requires 30 A average rectified current per diode. This part provides the specified current capacity with forward voltage of 940 mV at 30 A operation.

VFT3080C-E3/4W Selection Criteria: Select the VFT3080C-E3/4W when circuit current demand does not exceed 15 A per diode. This Vishay part operates within the same voltage class (80 V) and thermal range (-55°C to 150°C) with lower forward voltage (820 mV at 15 A) and identical fast recovery speed characteristics. The reverse leakage current is higher at 700 µA compared to 200 µA for the MBRF3080CT.

Both parts share identical mechanical compatibility with TO-220-3 Full Pack isolated tab mounting and are suitable for through-hole PCB assembly. Selection between these parts depends solely on whether the application current requirement aligns with the 30 A or 15 A rating.

Frequently Asked Questions (FAQ)

Q: Can the VFT3080C-E3/4W replace the MBRF3080CT in all applications?

A: The VFT3080C-E3/4W is a substitute only for applications where the circuit current does not exceed 15 A per diode. If the design requires 30 A operation, the VFT3080C-E3/4W is not suitable. Both parts share identical voltage rating (80 V), package type (TO-220-3 Full Pack, Isolated Tab), and thermal operating range (-55°C to 150°C).

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Current rating: MBRF3080CT is 30 A versus VFT3080C-E3/4W at 15 A; (2) Forward voltage: MBRF3080CT is 940 mV @ 30 A versus VFT3080C-E3/4W at 820 mV @ 15 A; (3) Reverse leakage: MBRF3080CT is 200 µA @ 80 V versus VFT3080C-E3/4W at 700 µA @ 80 V. All other electrical and mechanical parameters are equivalent.

Q: Are both parts RoHS compliant?

A: Yes, both the MBRF3080CT and VFT3080C-E3/4W are ROHS3 Compliant with Moisture Sensitivity Level 1 (Unlimited), ensuring regulatory compliance and handling flexibility.

Q: Do these parts have identical PCB footprints?

A: Yes, both parts use the TO-220-3 Full Pack with isolated tab package, providing identical through-hole mounting compatibility and PCB footprint requirements.

Q: What is the significance of the 1 Pair Common Cathode configuration?

A: The 1 Pair Common Cathode configuration indicates that the diode array contains two diodes with a shared cathode terminal. This configuration is fixed for both the MBRF3080CT and VFT3080C-E3/4W and determines circuit connectivity requirements.

Q: Can forward voltage differences affect circuit performance?

A: Forward voltage differences between parts (940 mV for MBRF3080CT versus 820 mV for VFT3080C-E3/4W) affect voltage drop across the diode during conduction. Circuit designs must account for these differences in power dissipation and voltage regulation calculations.

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