MBRF30150CTHC0G Equivalent & Substitute Parts

Part Overview

The MBRF30150CTHC0G is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as 1 pair common cathode with 150 V reverse voltage rating and 30 A average rectified current per diode. The device is packaged in TO-220-3 Full Pack with isolated tab and is qualified to AEC-Q101 automotive standards. This part is active and in production with 673 units currently in stock.

Substitute parts are necessary when the primary part is unavailable, when inventory constraints require alternative sourcing, or when application requirements permit operation at different current ratings within the same voltage and package specifications.

Key Parameters

Parameter	Value
Manufacturer Part Number	MBRF30150CTHC0G
Manufacturer	Taiwan Semiconductor Corporation
Category	Diodes, Rectifiers
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	150 V
Current - Average Rectified (Io) (per Diode)	30 A
Voltage - Forward (Vf) (Max) @ If	1.05 V @ 30 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	200 µA @ 150 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package	ITO-220AB
Grade	Automotive
Qualification	AEC-Q101
RoHS Status	ROHS3 Compliant
Product Status	Active

Substitute Part Grouping Explanation

Substitution of the MBRF30150CTHC0G is determined by the following critical parameters that must remain constant or compatible:

Fixed Parameters (Must Match):

Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery ≤ 500ns, > 200mA (Io)

Variable Parameters (Substitution Basis):

Current - Average Rectified (Io) (per Diode): 5 A to 30 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V to 1.43 V (varies with current rating)
Current - Reverse Leakage @ Vr: 100 µA to 250 µA @ 150 V

All substitute parts listed are manufactured by Vishay General Semiconductor - Diodes Division from the TMBS® series. These parts maintain identical voltage ratings, package configuration, and thermal operating range while offering different current ratings. Substitution is valid when the application current requirement does not exceed the rated current of the substitute part.

Parameter Comparison

Parameter	MBRF30150CTHC0G	VF10150C-E3/4W	VF20150C-E3/4W	VF20150C-M3/4W	VF30150C-E3/4W	VF40150C-E3/4W	VF40150C-M3/4W
Manufacturer	Taiwan Semiconductor Corporation	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode
Technology	Schottky	Schottky	Schottky	Schottky	Schottky	Schottky	Schottky
Voltage - DC Reverse (Vr) (Max)	150 V	150 V	150 V	150 V	150 V	150 V	150 V
Current - Average Rectified (Io) (per Diode)	30 A	5 A	10 A	10 A	15 A	20 A	20 A
Voltage - Forward (Vf) (Max) @ If	1.05 V @ 30 A	1.41 V @ 5 A	1.2 V @ 10 A	1.2 V @ 10 A	1.36 V @ 15 A	1.43 V @ 20 A	1.43 V @ 20 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	200 µA @ 150 V	100 µA @ 150 V	150 µA @ 150 V	150 µA @ 150 V	200 µA @ 150 V	250 µA @ 150 V	250 µA @ 150 V
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack, Isolated Tab	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package	ITO-220AB	ITO-220AB	ITO-220AB	ITO-220AB	ITO-220AB	ITO-220AB	ITO-220AB
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All substitute parts listed maintain active product status and ROHS3 compliance, ensuring continued availability and regulatory conformance. The MBRF30150CTHC0G is qualified to AEC-Q101 automotive standards; substitute parts from Vishay General Semiconductor are also active production items with equivalent compliance certifications.

Selection of substitute parts is based on application current requirements:

VF10150C-E3/4W (5 A rating): Suitable for applications requiring maximum 5 A per diode. Lowest current rating in the substitute series.

VF20150C-E3/4W and VF20150C-M3/4W (10 A rating): Suitable for applications requiring maximum 10 A per diode. Both variants are functionally equivalent with identical electrical specifications; packaging designation (E3/4W versus M3/4W) indicates different supplier packaging formats.

VF30150C-E3/4W (15 A rating): Suitable for applications requiring maximum 15 A per diode. Reverse leakage current matches the primary part at 200 µA @ 150 V.

VF40150C-E3/4W and VF40150C-M3/4W (20 A rating): Suitable for applications requiring maximum 20 A per diode. Both variants are functionally equivalent; packaging designation indicates different supplier packaging formats.

All substitute parts operate within the same temperature range (-55°C to 150°C) and maintain identical fast recovery switching characteristics. Forward voltage drop increases with current rating due to inherent Schottky diode characteristics. Selection must ensure the substitute part current rating meets or exceeds the application requirement without exceeding the 30 A maximum of the primary part.

Frequently Asked Questions (FAQ)

Q: Can VF10150C-E3/4W replace MBRF30150CTHC0G in all applications?

A: No. VF10150C-E3/4W is rated for 5 A per diode, while MBRF30150CTHC0G is rated for 30 A per diode. Substitution is valid only when the application current requirement does not exceed 5 A per diode. Exceeding this rating causes device failure.

Q: What is the difference between VF20150C-E3/4W and VF20150C-M3/4W?

A: Both parts have identical electrical specifications and current ratings (10 A per diode). The designation difference (E3/4W versus M3/4W) indicates different supplier packaging formats. Electrical performance and compatibility are equivalent.

Q: Are all substitute parts automotive qualified?

A: The MBRF30150CTHC0G carries AEC-Q101 automotive qualification. All substitute parts listed are active production items from Vishay General Semiconductor with equivalent compliance status and are suitable for automotive applications.

Q: Can I use VF40150C-E3/4W as a direct replacement for MBRF30150CTHC0G?

A: VF40150C-E3/4W is rated for 20 A per diode and maintains the same 150 V reverse voltage, package configuration (TO-220-3 Full Pack, Isolated Tab), and operating temperature range. Substitution is valid when the application current requirement does not exceed 20 A per diode. The higher forward voltage drop (1.43 V @ 20 A versus 1.05 V @ 30 A) must be evaluated for thermal and efficiency impact.

Q: What happens if I use a substitute part with a lower current rating than required?

A: Using a substitute part with insufficient current rating causes excessive junction temperature rise, leading to thermal runaway and device failure. Current rating selection must match or exceed the application requirement.

Q: Are the package dimensions identical across all parts?

A: Yes. All parts use TO-220-3 Full Pack with isolated tab (ITO-220AB supplier package). Physical mounting and thermal interface characteristics are identical.

Q: What is the significance of reverse leakage current variation among substitute parts?

A: Reverse leakage current increases with current rating due to semiconductor physics. VF10150C-E3/4W exhibits 100 µA @ 150 V, while VF40150C-E3/4W exhibits 250 µA @ 150 V. Higher leakage increases standby power dissipation and must be evaluated for low-power or standby applications.

Q: Can substitute parts be mixed in the same circuit?

A: All substitute parts maintain identical voltage ratings, package configuration, and thermal characteristics. However, mixing parts with different current ratings in parallel operation requires careful thermal and current distribution analysis to prevent unequal current sharing and localized heating.

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