MBRF20150CTH Equivalent & Substitute Parts

Part Overview

The MBRF20150CTH is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as 1 pair common cathode with 150 V reverse voltage rating and 20 A average rectified current per diode. The device is packaged in TO-220-3 Full Pack with isolated tab (ITO-220AB) for through-hole mounting applications. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	150 V
Current - Average Rectified (Io) (per Diode)	20 A
Voltage - Forward (Vf) (Max) @ If	1.05 V @ 20 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package	ITO-220AB
RoHS Status	ROHS3 Compliant
Grade	Automotive
Qualification	AEC-Q101

Substitute Part Grouping Explanation

Substitution of the MBRF20150CTH is determined by the following critical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 150 V
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB

Secondary Compatibility Factors:

Current - Average Rectified (Io) (per Diode): 20 A or higher
Operating Temperature - Junction: -55°C ~ 150°C
Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)
RoHS Status: ROHS3 Compliant

Substitute parts are grouped into two categories:

Category 1: Parametric Equivalents – Parts with identical electrical specifications and packaging, differing only in packaging format (tube vs. full pack).

Category 2: Similar Manufacturers – Parts from alternative manufacturers with matching or superior electrical ratings, same package configuration, and compatible thermal characteristics. These parts may exhibit variations in forward voltage drop and reverse leakage current within acceptable operating ranges.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io (per Diode)	Vf (Max) @ If	Ir @ Vr	Diode Config	Package	Status
MBRF20150CTH	Taiwan Semiconductor Corporation	150 V	20 A	1.05 V @ 20 A	100 µA @ 150 V	1 Pair Common Cathode	TO-220-3 Full Pack, Isolated Tab	Discontinued
MBRF20150CT	Taiwan Semiconductor Corporation	150 V	20 A	1.05 V @ 20 A	100 µA @ 150 V	1 Pair Common Cathode	TO-220-3 Full Pack, Isolated Tab	Active
DSTF40150C	Littelfuse Inc.	150 V	20 A	1.43 V @ 20 A	250 µA @ 150 V	1 Pair Common Cathode	TO-220-3 Full Pack, Isolated Tab	Active
VF10150C-E3/4W	Vishay General Semiconductor - Diodes Division	150 V	5 A	1.41 V @ 5 A	100 µA @ 150 V	1 Pair Common Cathode	TO-220-3 Full Pack, Isolated Tab	Active
VF20150C-E3/4W	Vishay General Semiconductor - Diodes Division	150 V	10 A	1.2 V @ 10 A	150 µA @ 150 V	1 Pair Common Cathode	TO-220-3 Full Pack, Isolated Tab	Active
VF20150C-M3/4W	Vishay General Semiconductor - Diodes Division	150 V	10 A	1.2 V @ 10 A	150 µA @ 150 V	1 Pair Common Cathode	TO-220-3 Full Pack, Isolated Tab	Active
VF20150S-E3/4W	Vishay General Semiconductor - Diodes Division	150 V	20 A	1.43 V @ 20 A	250 µA @ 150 V	Single Diode	TO-220-3 Full Pack, Isolated Tab	Active
VF20150S-M3/4W	Vishay General Semiconductor - Diodes Division	150 V	20 A	1.43 V @ 20 A	250 µA @ 150 V	Single Diode	TO-220-3 Full Pack, Isolated Tab	Active
VF20150SG-E3/4W	Vishay General Semiconductor - Diodes Division	150 V	20 A	1.6 V @ 20 A	200 µA @ 150 V	Single Diode	TO-220-3 Full Pack, Isolated Tab	Active
VF30150C-E3/4W	Vishay General Semiconductor - Diodes Division	150 V	15 A	1.36 V @ 15 A	200 µA @ 150 V	1 Pair Common Cathode	TO-220-3 Full Pack, Isolated Tab	Active
VF40150C-E3/4W	Vishay General Semiconductor - Diodes Division	150 V	20 A	1.43 V @ 20 A	250 µA @ 150 V	1 Pair Common Cathode	TO-220-3 Full Pack, Isolated Tab	Active
VF40150C-M3/4W	Vishay General Semiconductor - Diodes Division	150 V	20 A	1.43 V @ 20 A	250 µA @ 150 V	1 Pair Common Cathode	TO-220-3 Full Pack, Isolated Tab	Active

Engineering Selection Recommendations

Direct Parametric Equivalent:

MBRF20150CT from Taiwan Semiconductor Corporation is the direct parametric equivalent to MBRF20150CTH. Both parts share identical electrical specifications (150 V, 20 A, 1.05 V forward voltage, 100 µA reverse leakage) and packaging configuration. MBRF20150CT is currently active in production and available in tube packaging format. This part maintains full compatibility with the discontinued MBRF20150CTH and is the primary replacement option.

Active Substitute Options:

For applications requiring 20 A current capacity at 150 V reverse voltage with common cathode diode array configuration:

VF40150C-E3/4W and VF40150C-M3/4W (Vishay) provide identical current and voltage ratings with 1.43 V forward voltage and 250 µA reverse leakage. These parts are ROHS3 compliant and actively produced.
DSTF40150C (Littelfuse) offers equivalent 20 A, 150 V specifications with similar forward voltage characteristics (1.43 V) and reverse leakage (250 µA).

For applications where current capacity can be reduced:

VF30150C-E3/4W (Vishay) provides 15 A capacity at 150 V with improved forward voltage (1.36 V) and is actively produced with high inventory availability.
VF20150C-E3/4W and VF20150C-M3/4W (Vishay) provide 10 A capacity at 150 V with forward voltage of 1.2 V and are actively produced.

All recommended substitutes maintain through-hole TO-220-3 Full Pack, Isolated Tab packaging (ITO-220AB), operating temperature range of -55°C to 150°C, ROHS3 compliance, and fast recovery Schottky technology specifications.

Frequently Asked Questions (FAQ)

Q: Can MBRF20150CT directly replace MBRF20150CTH?

A: Yes. MBRF20150CT is the parametric equivalent with identical electrical specifications and packaging. The only difference is packaging format (tube vs. full pack). Both parts are 150 V, 20 A Schottky diode arrays in 1 pair common cathode configuration with TO-220-3 Full Pack, Isolated Tab packaging.

Q: What is the difference between parts with "C" suffix (array) and "S" suffix (single diode)?

A: Parts with "C" suffix (VF20150C, VF40150C, VF30150C) are diode arrays configured as 1 pair common cathode. Parts with "S" suffix (VF20150S, VF20150SG) are single diodes. The MBRF20150CTH is an array configuration, so array-type substitutes (C suffix) maintain circuit compatibility. Single diode parts (S suffix) require different circuit implementation.

Q: Can I use VF20150C-E3/4W (10 A) instead of MBRF20150CTH (20 A)?

A: VF20150C-E3/4W can be used only in applications where the maximum required current does not exceed 10 A per diode. The part maintains 150 V reverse voltage rating, common cathode configuration, and TO-220-3 Full Pack, Isolated Tab packaging. Forward voltage is 1.2 V at 10 A, which is lower than the original 1.05 V at 20 A. Circuit redesign or current limiting may be necessary.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and maintain the same environmental compliance status as the original MBRF20150CTH.

Q: What is the significance of forward voltage differences between substitutes?

A: Forward voltage (Vf) affects power dissipation and thermal performance. MBRF20150CTH specifies 1.05 V @ 20 A. Substitutes with higher Vf (1.43 V for VF40150C, DSTF40150C) generate more heat at the same current. Substitutes with lower Vf (1.2 V for VF20150C) generate less heat. Circuit thermal analysis should account for these differences in high-current applications.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current (Ir) affects standby power consumption and thermal stability. MBRF20150CTH specifies 100 µA @ 150 V. Higher leakage values (250 µA for VF40150C, DSTF40150C) increase standby power dissipation. Lower leakage values maintain efficiency in low-current standby conditions. Selection depends on application duty cycle and thermal budget.

Q: Can I use VF30150C-E3/4W (15 A) as a substitute?

A: VF30150C-E3/4W can be used in applications where maximum required current does not exceed 15 A per diode. The part maintains 150 V reverse voltage rating, common cathode configuration, and TO-220-3 Full Pack, Isolated Tab packaging. Forward voltage is 1.36 V @ 15 A, which is higher than the original specification. This part is suitable for applications with reduced current requirements.

Q: Are there any differences in mounting between substitute parts?

A: All substitute parts use identical through-hole TO-220-3 Full Pack, Isolated Tab packaging (ITO-220AB). PCB footprint and mounting procedures are identical. No mechanical redesign is required for board-level substitution.

Q: What is the difference between E3/4W and M3/4W packaging variants?

A: Both E3/4W and M3/4W designations refer to packaging format variants within the same electrical specification. Both are tube-packaged TO-220-3 Full Pack, Isolated Tab devices. Selection between variants depends on supplier availability and procurement requirements. Electrical performance is identical.

Q: Which substitute offers the best thermal performance?

A: VF20150C-E3/4W and VF20150C-M3/4W offer the lowest forward voltage (1.2 V @ 10 A) among common cathode array options, resulting in lowest power dissipation at their rated current. However, these parts are rated for 10 A maximum. For 20 A applications, MBRF20150CT (1.05 V @ 20 A) provides the best thermal performance, followed by VF40150C and DSTF40150C (1.43 V @ 20 A).

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