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MBRF20100CT-M3/4W Equivalent & Substitute Parts
Part Overview
The MBRF20100CT-M3/4W is a Schottky diode array manufactured by Vishay General Semiconductor - Diodes Division. This component features a 1 Pair Common Cathode configuration rated for 100 V DC reverse voltage with 10 A average rectified current per diode. The device is packaged in a TO-220-3 Full Pack with isolated tab and is designed for through-hole mounting applications. The part maintains Active product status and is RoHS3 compliant. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and supply chain continuity for applications requiring Schottky diode array functionality within the specified electrical and mechanical parameters.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Diode Configuration | 1 Pair Common Cathode |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 10 A |
| Speed | Fast Recovery ≤ 500 ns, > 200 mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 100 V |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| RoHS Status | RoHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the MBRF20100CT-M3/4W is determined by strict equivalence across the following critical parameters: Schottky diode array technology, 1 Pair Common Cathode configuration, 100 V maximum DC reverse voltage rating, 10 A average rectified current per diode, fast recovery speed characteristic (≤ 500 ns, > 200 mA), through-hole mounting type, and TO-220-3 Full Pack package format. All substitute parts listed maintain these core electrical and mechanical specifications. Variations in forward voltage (Vf), reverse leakage current, maximum junction temperature, and supplier device package designation do not preclude substitution when the primary functional parameters remain within acceptable operating ranges for the application circuit.
Parameter Comparison
| Parameter | MBRF20100CT-M3/4W (Vishay) | MBRF20100CT-E3/4W (Vishay) | STPS20H100CFP (STMicroelectronics) | MBRF20100CTG (onsemi) | STPS20S100CFP (STMicroelectronics) |
|---|---|---|---|---|---|
| Manufacturer | Vishay General Semiconductor | Vishay General Semiconductor | STMicroelectronics | onsemi | STMicroelectronics |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Technology | Schottky | Schottky | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 100 V | 100 V |
| Current - Average Rectified (Io) (per Diode) | 10 A | 10 A | 10 A | 10 A | 10 A |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 10 A | 800 mV @ 10 A | 770 mV @ 10 A | 850 mV @ 10 A | 850 mV @ 10 A |
| Speed | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 100 V | 100 µA @ 100 V | 4.5 µA @ 100 V | 150 µA @ 100 V | 3.5 µA @ 100 V |
| Operating Temperature - Junction | -65°C ~ 150°C | -65°C ~ 150°C | 175°C (Max) | -65°C ~ 175°C | 175°C (Max) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Supplier Device Package | ITO-220AB | ITO-220AB | TO-220FP | TO-220FP | TO-220FP |
| RoHS Status | RoHS3 Compliant | RoHS3 Compliant | RoHS3 Compliant | RoHS3 Compliant | RoHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | Not Applicable | 1 (Unlimited) |
| Product Status | Active | Active | Active | Active | Active |
Engineering Selection Recommendations
All listed substitute parts maintain Active product status and RoHS3 compliance, ensuring regulatory alignment with the MBRF20100CT-M3/4W. The MBRF20100CT-E3/4W represents a parametric equivalent from the same manufacturer with identical electrical specifications and package configuration, differing only in internal manufacturing process designation. The STMicroelectronics STPS20H100CFP and STPS20S100CFP offer lower reverse leakage current characteristics (4.5 µA and 3.5 µA respectively versus 100 µA) and extended maximum junction temperature ratings (175°C versus 150°C), with forward voltage specifications within acceptable operating margins. The onsemi MBRF20100CTG provides equivalent performance with slightly elevated forward voltage (850 mV) and reverse leakage (150 µA) specifications, extended temperature range to 175°C, and carries SWITCHMODE™ series designation. All substitute parts are manufactured to RoHS3 and REACH compliance standards. Selection among these alternatives depends on application-specific requirements for leakage current performance, thermal operating range, and supplier availability.
Frequently Asked Questions (FAQ)
Q: Can the MBRF20100CT-E3/4W directly replace the MBRF20100CT-M3/4W?
A: Yes. The MBRF20100CT-E3/4W is a parametric equivalent manufactured by Vishay General Semiconductor with identical electrical specifications (100 V, 10 A, 800 mV forward voltage, 100 µA reverse leakage) and package configuration (TO-220-3 Full Pack, Isolated Tab). The difference is internal manufacturing process designation only.
Q: What are the key differences between the Vishay and STMicroelectronics substitute options?
A: The STMicroelectronics STPS20H100CFP and STPS20S100CFP maintain the same 100 V, 10 A ratings and fast recovery speed. Primary differences include lower reverse leakage current (4.5 µA and 3.5 µA respectively), higher maximum junction temperature (175°C), and slightly lower forward voltage (770 mV and 850 mV). Package designation is TO-220FP rather than ITO-220AB, though both are TO-220-3 Full Pack formats.
Q: Is the onsemi MBRF20100CTG suitable for high-temperature applications?
A: The MBRF20100CTG supports operating junction temperatures to 175°C, compared to 150°C for the MBRF20100CT-M3/4W. This extended range accommodates higher ambient temperature environments. Forward voltage is specified at 850 mV and reverse leakage at 150 µA, both within acceptable substitution parameters.
Q: Are there package compatibility considerations when substituting these parts?
A: All substitute parts use TO-220-3 Full Pack through-hole mounting. The MBRF20100CT-M3/4W and MBRF20100CT-E3/4W feature isolated tab configuration (ITO-220AB), while STMicroelectronics and onsemi alternatives use standard TO-220FP format. Verify PCB layout and thermal management design accommodate the specific package variant selected.
Q: How do reverse leakage current differences affect circuit performance?
A: The STPS20H100CFP (4.5 µA) and STPS20S100CFP (3.5 µA) exhibit significantly lower reverse leakage than the MBRF20100CT-M3/4W (100 µA). Lower leakage reduces standby power dissipation and improves circuit efficiency in applications sensitive to leakage current. The onsemi MBRF20100CTG (150 µA) represents a moderate increase. Selection depends on application power budget requirements.
Q: What compliance certifications apply to all substitute parts?
A: All listed parts maintain RoHS3 compliance and REACH Unaffected status. Moisture Sensitivity Level is 1 (Unlimited) for all parts except the onsemi MBRF20100CTG, which lists MSL as Not Applicable. All parts carry EAR99 export classification and HTSUS code 8541.10.0080.
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