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MBRF20100CTH Equivalent & Substitute Parts
Part Overview
The MBRF20100CTH is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as 1 pair common cathode with 100 V reverse voltage rating and 20 A average rectified current per diode. The device is packaged in TO-220-3 with isolated tab (ITO-220AB) for through-hole mounting applications. This part is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Diode Configuration | 1 Pair Common Cathode | — |
| Technology | Schottky | — |
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) (per Diode) | 20 | A |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A | — |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Current - Reverse Leakage @ Vr | 100 | µA @ 100 V |
| Operating Temperature - Junction | -55°C ~ 150°C | — |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | — |
| Supplier Device Package | ITO-220AB | — |
| RoHS Status | ROHS3 Compliant | — |
| Grade | Automotive | — |
| Qualification | AEC-Q101 | — |
Substitute Part Grouping Explanation
Substitution of the MBRF20100CTH is determined by the following critical parameters:
Primary Substitution Criteria:
- Diode configuration: 1 Pair Common Cathode
- Technology: Schottky
- Voltage rating: 100 V DC reverse
- Current rating: 20 A average rectified per diode
- Package: TO-220-3 Full Pack, Isolated Tab (ITO-220AB)
- Mounting type: Through Hole
- Speed classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Parametric Equivalent: Parts meeting all primary criteria with identical electrical specifications.
Similar Parts: Components that share the same package, mounting type, voltage rating, and technology but differ in current rating, forward voltage characteristics, or temperature range. These parts are suitable for applications where the 20 A current requirement can be met by higher-rated devices or where lower current ratings are acceptable within circuit design margins.
Parameter Comparison
| Part Number | Manufacturer | Io (per Diode) | Vf (Max) @ If | Vr (Max) | Leakage @ Vr | Tj (Operating) | Product Status |
|---|---|---|---|---|---|---|---|
| MBRF20100CTH | Taiwan Semiconductor Corporation | 20 A | 950 mV @ 20 A | 100 V | 100 µA @ 100 V | -55°C ~ 150°C | Discontinued |
| MBRF20H100CT | Taiwan Semiconductor Corporation | 20 A | 950 mV @ 20 A | 100 V | 5 µA @ 100 V | -55°C ~ 175°C | Active |
| MBRF10100CT-E3/4W | Vishay General Semiconductor - Diodes Division | 5 A | 850 mV @ 5 A | 100 V | 100 µA @ 100 V | -65°C ~ 150°C | Active |
| MBRF20100CT-E3/4W | Vishay General Semiconductor - Diodes Division | 10 A | 800 mV @ 10 A | 100 V | 100 µA @ 100 V | -65°C ~ 150°C | Active |
| MBRF20H100CT-E3/45 | Vishay General Semiconductor - Diodes Division | 10 A | 770 mV @ 10 A | 100 V | 4.5 µA @ 100 V | -65°C ~ 175°C | Active |
| MBRF30H100CT-E3/45 | Vishay General Semiconductor - Diodes Division | 15 A | 820 mV @ 15 A | 100 V | 5 µA @ 100 V | -65°C ~ 175°C | Active |
| VF20100C-E3/4W | Vishay General Semiconductor - Diodes Division | 10 A | 790 mV @ 10 A | 100 V | 800 µA @ 100 V | -40°C ~ 150°C | Active |
| VF20100R-E3/4W | Vishay General Semiconductor - Diodes Division | 10 A | 900 mV @ 10 A | 100 V | 150 µA @ 100 V | -40°C ~ 150°C | Active |
| VF20100SG-E3/4W | Vishay General Semiconductor - Diodes Division | 20 A | 1.07 V @ 20 A | 100 V | 350 µA @ 100 V | -40°C ~ 150°C | Active |
| VF30100C-E3/4W | Vishay General Semiconductor - Diodes Division | 15 A | 800 mV @ 15 A | 100 V | 500 µA @ 100 V | -40°C ~ 150°C | Active |
| VF30100S-E3/4W | Vishay General Semiconductor - Diodes Division | 30 A | 910 mV @ 30 A | 100 V | 1 mA @ 100 V | -40°C ~ 150°C | Active |
Engineering Selection Recommendations
Parametric Equivalent (Direct Replacement):
MBRF20H100CT is the primary equivalent for MBRF20100CTH. Both parts are manufactured by Taiwan Semiconductor Corporation, share identical diode configuration, voltage rating, and current rating of 20 A per diode. MBRF20H100CT is currently active in inventory with 1360 pieces available. The part exhibits improved reverse leakage characteristics (5 µA versus 100 µA) and extended maximum junction temperature range (-55°C ~ 175°C versus -55°C ~ 150°C). Both parts maintain ROHS3 compliance and identical package specifications (TO-220-3 Full Pack, Isolated Tab, ITO-220AB).
Active Alternatives for Current-Rated Applications:
VF20100SG-E3/4W provides a 20 A current rating matching the original specification. Manufactured by Vishay General Semiconductor - Diodes Division, this part is TMBS® series, ROHS3 compliant, and currently active with 3477 pieces in stock. Forward voltage is 1.07 V @ 20 A, which is higher than the original 950 mV @ 20 A specification. Operating temperature range is -40°C ~ 150°C. This part is suitable for applications where the higher forward voltage drop is acceptable within thermal and efficiency budgets.
Reduced Current Rating Alternatives:
For applications where 20 A per diode is not required, the following active parts provide lower current ratings with improved electrical characteristics:
MBRF20H100CT-E3/45 and MBRF20100CT-E3/4W both provide 10 A per diode rating with 100 V reverse voltage. MBRF20H100CT-E3/45 offers superior reverse leakage (4.5 µA) and extended temperature range (-65°C ~ 175°C). MBRF20100CT-E3/4W provides -65°C ~ 150°C operating range with 100 µA leakage.
MBRF30H100CT-E3/45 provides 15 A per diode rating with 100 V reverse voltage, 5 µA reverse leakage, and -65°C ~ 175°C operating range.
MBRF10100CT-E3/4W provides 5 A per diode rating with 100 V reverse voltage and -65°C ~ 150°C operating range.
Higher Current Rating Alternative:
VF30100S-E3/4W provides 30 A current rating, exceeding the original 20 A specification. This part is suitable for applications requiring higher current capacity with the same 100 V voltage rating and TO-220-3 package. Operating temperature range is -40°C ~ 150°C.
All recommended alternatives maintain ROHS3 compliance, identical package specifications (TO-220-3 Full Pack, Isolated Tab, ITO-220AB), through-hole mounting type, and Schottky technology classification.
Frequently Asked Questions (FAQ)
Q: Can MBRF20H100CT directly replace MBRF20100CTH?
A: Yes. MBRF20H100CT is a parametric equivalent manufactured by the same supplier (Taiwan Semiconductor Corporation) with identical diode configuration (1 pair common cathode), voltage rating (100 V), current rating (20 A per diode), package (TO-220-3 Full Pack, Isolated Tab), and mounting type (through hole). The part is currently active with improved reverse leakage characteristics and extended temperature range.
Q: What is the difference between MBRF20100CTH and VF20100SG-E3/4W?
A: Both parts provide 20 A current rating and 100 V reverse voltage in TO-220-3 package. VF20100SG-E3/4W is manufactured by Vishay General Semiconductor - Diodes Division and exhibits higher forward voltage (1.07 V @ 20 A versus 950 mV @ 20 A) and higher reverse leakage (350 µA versus 100 µA). Operating temperature range is -40°C ~ 150°C. Selection depends on circuit tolerance for forward voltage drop and leakage current.
Q: Can I use a 10 A rated part instead of the 20 A MBRF20100CTH?
A: Substitution with lower current-rated parts (such as MBRF20100CT-E3/4W or MBRF20H100CT-E3/45 at 10 A) is possible only if circuit design margins permit operation at reduced current capacity. The 100 V voltage rating and package remain compatible. Verify that maximum circuit current does not exceed the substitute part's 10 A rating.
Q: What is the package compatibility for all listed substitutes?
A: All listed substitute parts use TO-220-3 Full Pack with Isolated Tab (ITO-220AB) package for through-hole mounting. Physical footprint and pin configuration are identical, enabling direct PCB mounting compatibility.
Q: Are all substitute parts RoHS compliant?
A: Yes. All listed substitute parts maintain ROHS3 compliance status, matching the original MBRF20100CTH specification.
Q: How do reverse leakage characteristics differ among substitutes?
A: Reverse leakage @ 100 V varies significantly: MBRF20H100CT (5 µA), MBRF20H100CT-E3/45 (4.5 µA), MBRF30H100CT-E3/45 (5 µA), VF20100C-E3/4W (800 µA), VF20100R-E3/4W (150 µA), VF20100SG-E3/4W (350 µA), VF30100C-E3/4W (500 µA), and VF30100S-E3/4W (1 mA). Lower leakage is beneficial for low-power applications and reduced thermal dissipation.
Q: What is the temperature range consideration for substitution?
A: Original MBRF20100CTH operates -55°C ~ 150°C. MBRF20H100CT extends to -55°C ~ 175°C. Vishay parts typically operate -40°C ~ 150°C or -65°C ~ 175°C. Verify that substitute part temperature range meets application requirements, particularly for automotive or industrial environments requiring extended low-temperature operation.
Q: Is automotive qualification maintained across all substitutes?
A: The original MBRF20100CTH carries automotive grade with AEC-Q101 qualification. Not all listed substitutes explicitly state automotive qualification in provided specifications. Verify automotive qualification requirements with manufacturer datasheets if application demands automotive-grade components.
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