MBRF10L100CT Equivalent & Substitute Parts

Part Overview

The MBRF10L100CT is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode with a maximum reverse voltage rating of 100 V and average rectified current of 10 A per diode. The device is packaged in a TO-220-3 Full Pack with isolated tab configuration for through-hole mounting applications.

This part is currently discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components that maintain functional compatibility within the specified electrical and mechanical parameters. Alternative parts are available from multiple manufacturers including SMC Diode Solutions and Vishay General Semiconductor - Diodes Division.

Key Parameters

Parameter	Value	Unit
Diode Configuration	1 Pair Common Cathode	—
Technology	Schottky	—
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io) (per Diode)	10	A
Voltage - Forward (Vf) (Max) @ If	850 mV @ 10 A	—
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	20	mA @ 100 V
Operating Temperature - Junction	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack, Isolated Tab	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the MBRF10L100CT is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Diode Configuration: 1 Pair Common Cathode (mandatory)
Technology: Schottky (mandatory)
Voltage - DC Reverse (Vr) (Max): 100 V (mandatory)
Current - Average Rectified (Io) (per Diode): 10 A (mandatory)
Mounting Type: Through Hole (mandatory)
Package / Case: TO-220-3 Full Pack, Isolated Tab (mandatory)
Supplier Device Package: ITO-220AB (mandatory)

Secondary Compatibility Parameters:

Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A (reference value; minor variations acceptable within design margins)
Speed: Fast Recovery ≤ 500ns, > 200mA (Io) (mandatory)
Operating Temperature - Junction: -55°C ~ 150°C (minimum requirement)
RoHS Status: ROHS3 Compliant (mandatory)

Substitute parts are classified into three categories:

Parametric Equivalent: Parts with identical electrical specifications and automotive-grade qualification (AEC-Q101).

Direct Manufacturer Equivalent: Parts from alternative manufacturers with matching core electrical parameters and packaging, available in active production status.

Similar Configuration: Parts with the same diode configuration and package but differing in current rating (5 A or 15 A) or forward voltage characteristics, suitable for applications with relaxed current or thermal requirements.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io (per Diode)	Vf (Max) @ If	Ir @ Vr	Tj (Operating)	Package	Status
MBRF10L100CT	Taiwan Semiconductor Corporation	100 V	10 A	850 mV @ 10 A	20 mA @ 100 V	-55 to 150°C	TO-220-3 Full Pack, Isolated Tab	Discontinued
MBRF10L100CTHC0G	Taiwan Semiconductor Corporation	100 V	10 A	850 mV @ 10 A	20 mA @ 100 V	-55 to 150°C	TO-220-3 Full Pack, Isolated Tab	Active
MBRF10100CT	Taiwan Semiconductor Corporation	100 V	10 A	950 mV @ 10 A	100 µA @ 100 V	-55 to 150°C	TO-220-3 Full Pack, Isolated Tab	Active
MBRF10100CTP	SMC Diode Solutions	100 V	—	850 mV @ 5 A	1 mA @ 100 V	-55 to 150°C	TO-220-3 Full Pack, Isolated Tab	Active
MBRF10100CTU	SMC Diode Solutions	100 V	10 A	820 mV @ 5 A	1 mA @ 100 V	-55 to 150°C	TO-220-3	Active
SBRF10100CT	SMC Diode Solutions	100 V	—	850 mV @ 5 A	1 mA @ 100 V	-55 to 150°C	TO-220-3 Full Pack, Isolated Tab	Active
MBRF10100CT-E3/4W	Vishay General Semiconductor - Diodes Division	100 V	5 A	850 mV @ 5 A	100 µA @ 100 V	-65 to 150°C	TO-220-3 Full Pack, Isolated Tab	Active
MBRF20100CT-E3/4W	Vishay General Semiconductor - Diodes Division	100 V	10 A	800 mV @ 10 A	100 µA @ 100 V	-65 to 150°C	TO-220-3 Full Pack, Isolated Tab	Active
MBRF20H100CT-E3/45	Vishay General Semiconductor - Diodes Division	100 V	10 A	770 mV @ 10 A	4.5 µA @ 100 V	-65 to 175°C	TO-220-3 Full Pack, Isolated Tab	Active
MBRF30H100CT-E3/45	Vishay General Semiconductor - Diodes Division	100 V	15 A	820 mV @ 15 A	5 µA @ 100 V	-65 to 175°C	TO-220-3 Full Pack, Isolated Tab	Active
VF20100C-E3/4W	Vishay General Semiconductor - Diodes Division	100 V	10 A	790 mV @ 10 A	800 µA @ 100 V	-40 to 150°C	TO-220-3 Full Pack, Isolated Tab	Active

Engineering Selection Recommendations

Primary Recommendation: MBRF10L100CTHC0G

The MBRF10L100CTHC0G from Taiwan Semiconductor Corporation is the parametric equivalent of the discontinued MBRF10L100CT. This part maintains identical electrical specifications including 100 V reverse voltage, 10 A average rectified current, and 850 mV forward voltage at 10 A. The device is currently in active production status with 786 units in stock. The MBRF10L100CTHC0G includes automotive-grade qualification (AEC-Q101) and is ROHS3 compliant, making it suitable for applications requiring enhanced reliability standards.

Secondary Recommendation: MBRF20100CT-E3/4W

The MBRF20100CT-E3/4W from Vishay General Semiconductor - Diodes Division provides full electrical compatibility with the original part. This device maintains the 100 V reverse voltage and 10 A average rectified current specifications while offering improved forward voltage characteristics (800 mV @ 10 A versus 850 mV @ 10 A). The extended operating temperature range (-65°C to 150°C) and ROHS3 compliance support demanding applications. This part is actively produced with 1575 units in stock.

Alternative Recommendation: MBRF20H100CT-E3/45

The MBRF20H100CT-E3/45 from Vishay General Semiconductor - Diodes Division offers superior performance characteristics including lower forward voltage (770 mV @ 10 A), extended maximum junction temperature (175°C), and significantly reduced reverse leakage current (4.5 µA @ 100 V). This part is suitable for applications requiring enhanced thermal performance or lower power dissipation. The device is actively produced with 1400 units in stock.

Current Rating Consideration: MBRF10100CT-E3/4W

The MBRF10100CT-E3/4W from Vishay General Semiconductor - Diodes Division is suitable for applications with reduced current requirements (5 A per diode). This part maintains the 100 V reverse voltage and TO-220-3 package configuration while offering the same fast recovery speed. Selection of this part is appropriate only when circuit design permits operation at 5 A maximum current.

Higher Current Requirement: MBRF30H100CT-E3/45

The MBRF30H100CT-E3/45 from Vishay General Semiconductor - Diodes Division accommodates applications requiring higher current capacity (15 A per diode). This part maintains the 100 V reverse voltage and TO-220-3 package while providing extended temperature range (-65°C to 175°C) and improved reverse leakage characteristics (5 µA @ 100 V).

Frequently Asked Questions (FAQ)

Q: Can MBRF10100CT be used as a direct replacement for MBRF10L100CT?

A: MBRF10100CT shares the same diode configuration, voltage rating, current rating, and package type. However, it exhibits higher forward voltage (950 mV @ 10 A versus 850 mV @ 10 A) and higher reverse leakage current (100 µA @ 100 V versus 20 mA @ 100 V). This part is suitable for applications where these parameter variations fall within design tolerances.

Q: What is the difference between MBRF10L100CTHC0G and MBRF10L100CT?

A: MBRF10L100CTHC0G is the active production equivalent of the discontinued MBRF10L100CT. Both parts maintain identical electrical specifications and packaging. The primary difference is production status: MBRF10L100CTHC0G is currently in active production, while MBRF10L100CT is discontinued. MBRF10L100CTHC0G includes automotive-grade qualification (AEC-Q101).

Q: Are SMC Diode Solutions parts (MBRF10100CTP, MBRF10100CTU, SBRF10100CT) compatible with MBRF10L100CT?

A: These parts maintain the same diode configuration, 100 V reverse voltage rating, and TO-220-3 package. However, they exhibit lower reverse leakage current (1 mA @ 100 V versus 20 mA @ 100 V) and forward voltage specifications measured at 5 A rather than 10 A. MBRF10100CTU specifically maintains the 10 A current rating. These parts are suitable for applications where the parameter differences are acceptable.

Q: What is the advantage of MBRF20H100CT-E3/45 over MBRF10L100CT?

A: MBRF20H100CT-E3/45 provides lower forward voltage (770 mV @ 10 A versus 850 mV @ 10 A), significantly reduced reverse leakage current (4.5 µA @ 100 V versus 20 mA @ 100 V), and extended maximum junction temperature (175°C versus 150°C). These characteristics result in lower power dissipation and improved thermal performance in high-temperature applications.

Q: Can MBRF10100CT-E3/4W be used in applications designed for MBRF10L100CT?

A: MBRF10100CT-E3/4W is suitable only for applications where the circuit design permits operation at 5 A maximum current per diode. The original MBRF10L100CT is rated for 10 A per diode. Use of MBRF10100CT-E3/4W in a 10 A application would result in device overstress and potential failure.

Q: What is the significance of the "H" designation in MBRF20H100CT-E3/45?

A: The "H" designation indicates enhanced performance characteristics, including lower forward voltage drop and improved reverse leakage specifications compared to standard versions. This designation reflects optimized die design and manufacturing processes for superior electrical performance.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed in this reference are ROHS3 compliant. This compliance status is maintained across all recommended alternatives, ensuring compatibility with environmental and regulatory requirements.

Q: What is the difference between TO-220-3 Full Pack, Isolated Tab and TO-220-3 packaging?

A: TO-220-3 Full Pack, Isolated Tab includes an isolated tab design that provides electrical isolation between the mounting surface and the device substrate. Standard TO-220-3 packaging may not include this isolation feature. Verify mounting requirements in the application circuit before selecting between these package variants.

Q: Can VF20100C-E3/4W be used as a substitute for MBRF10L100CT?

A: VF20100C-E3/4W maintains the same diode configuration, 100 V reverse voltage, 10 A current rating, and TO-220-3 package. However, it exhibits higher reverse leakage current (800 µA @ 100 V versus 20 mA @ 100 V) and a narrower operating temperature range (-40°C to 150°C versus -55°C to 150°C). This part is suitable for applications where these parameter variations are acceptable and minimum operating temperature does not fall below -40°C.

Q: What inventory status should be considered when selecting a substitute part?

A: Current inventory levels are provided for reference. MBRF10L100CTHC0G (786 units), MBRF20100CT-E3/4W (1575 units), and MBRF20H100CT-E3/45 (1400 units) maintain adequate stock levels for production requirements. Verify current availability with the component supplier before finalizing procurement decisions.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message