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MBRF1045CTHC0G Equivalent & Substitute Parts
Part Overview
The MBRF1045CTHC0G is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode arrangement. This component operates at a maximum reverse voltage of 45 V with an average rectified current of 10 A per diode. The device is housed in a TO-220-3 Full Pack with isolated tab through-hole package and is qualified to AEC-Q101 automotive standards. The part is currently active in production with 948 units in stock.
Equivalent and substitute parts are identified to provide design flexibility for applications requiring compatible Schottky diode arrays with matching or alternative electrical and mechanical specifications within the same package family.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Diode Configuration | 1 Pair Common Cathode |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 45 V |
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 10 A |
| Speed | Fast Recovery ≤ 500 ns, > 200 mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 45 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute parts for the MBRF1045CTHC0G are identified based on strict electrical and mechanical compatibility criteria. The following parameters determine substitution eligibility:
Primary Compatibility Criteria:
- Diode Configuration: 1 Pair Common Cathode
- Technology: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Mounting Type: Through Hole
Secondary Variation Parameters:
- Current - Average Rectified (Io) (per Diode): Acceptable range 7.5 A to 12.5 A
- Voltage - Forward (Vf) (Max) @ If: Acceptable variation within specified test conditions
- Current - Reverse Leakage @ Vr: Acceptable range 100 µA to 200 µA @ 45 V
- Operating Temperature - Junction: Acceptable range -65°C ~ 150°C
Substitute parts maintain identical package configuration, reverse voltage rating, and diode topology while permitting variations in current handling capacity and forward voltage characteristics within the specified electrical operating envelope.
Parameter Comparison
| Parameter | MBRF1045CTHC0G | MBRF1545CT-E3/45 | MBRF2545CT-E3/45 |
|---|---|---|---|
| Manufacturer | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Technology | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 45 V | 45 V | 45 V |
| Current - Average Rectified (Io) (per Diode) | 10 A | 7.5 A | 12.5 A |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 10 A | 570 mV @ 7.5 A | 820 mV @ 30 A |
| Speed | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) | Fast Recovery ≤ 500 ns, > 200 mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 45 V | 100 µA @ 45 V | 200 µA @ 45 V |
| Operating Temperature - Junction | -55°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package | ITO-220AB | ITO-220AB | ITO-220AB |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
MBRF1545CT-E3/45 (Vishay): This substitute is suitable for applications where the required current per diode does not exceed 7.5 A. The lower forward voltage (570 mV @ 7.5 A) compared to the main part provides reduced power dissipation in current-limited applications. The extended lower operating temperature limit (-65°C) offers enhanced performance in cold environment applications. This part maintains ROHS3 compliance and REACH unaffected status. Selection of this substitute is appropriate when thermal management or low-temperature operation is a design priority and current requirements are within the 7.5 A specification.
MBRF2545CT-E3/45 (Vishay): This substitute is suitable for applications requiring higher current capacity up to 12.5 A per diode. The increased current rating accommodates higher power applications while maintaining the 45 V reverse voltage specification. The extended lower operating temperature limit (-65°C) provides enhanced cold environment performance. The reverse leakage current is specified at 200 µA @ 45 V, which is acceptable for applications where leakage current variation is within design tolerance. This part maintains ROHS3 compliance and REACH unaffected status. Selection of this substitute is appropriate when higher current capacity is required and the application can accommodate the specified leakage current characteristics.
Both substitute parts are active products with established inventory availability and maintain full compliance with automotive and environmental standards applicable to the main part.
Frequently Asked Questions (FAQ)
Q: Can MBRF1545CT-E3/45 be used as a direct replacement for MBRF1045CTHC0G?
A: MBRF1545CT-E3/45 is electrically compatible for applications where the circuit current requirement does not exceed 7.5 A per diode. The identical 45 V reverse voltage rating, common cathode configuration, and TO-220-3 package ensure mechanical and electrical interface compatibility. However, the lower current rating means this substitute is suitable only for reduced-current applications.
Q: What is the primary difference between MBRF2545CT-E3/45 and the main part MBRF1045CTHC0G?
A: The primary difference is the current rating: MBRF2545CT-E3/45 is rated for 12.5 A per diode compared to 10 A for MBRF1045CTHC0G. Both parts share identical 45 V reverse voltage, common cathode configuration, and TO-220-3 package specifications. The MBRF2545CT-E3/45 accommodates higher current applications while maintaining the same voltage and package compatibility.
Q: Are all three parts interchangeable in the same PCB footprint?
A: Yes. All three parts use the TO-220-3 Full Pack with isolated tab package configuration and identical pin assignments for the common cathode diode array. PCB footprints designed for MBRF1045CTHC0G accommodate MBRF1545CT-E3/45 and MBRF2545CT-E3/45 without modification.
Q: What is the significance of the reverse leakage current difference between MBRF1045CTHC0G and MBRF2545CT-E3/45?
A: MBRF1045CTHC0G specifies 100 µA @ 45 V reverse leakage, while MBRF2545CT-E3/45 specifies 200 µA @ 45 V. This difference is within acceptable variation for Schottky diode technology. Applications sensitive to leakage current should evaluate this parameter against circuit design requirements.
Q: Do all substitute parts meet automotive qualification standards?
A: MBRF1045CTHC0G carries AEC-Q101 automotive qualification. MBRF1545CT-E3/45 and MBRF2545CT-E3/45 are manufactured by Vishay and are active products with ROHS3 compliance and REACH unaffected status. Specific automotive qualification status for the Vishay parts should be confirmed through the manufacturer's documentation if AEC-Q101 certification is a design requirement.
Q: What is the operating temperature range difference between the main part and substitutes?
A: MBRF1045CTHC0G operates from -55°C to 150°C. Both MBRF1545CT-E3/45 and MBRF2545CT-E3/45 operate from -65°C to 150°C. The extended lower temperature limit in the substitute parts provides additional margin for cold environment applications.
Q: How do forward voltage characteristics compare across the three parts?
A: Forward voltage varies with current: MBRF1045CTHC0G is 800 mV @ 10 A, MBRF1545CT-E3/45 is 570 mV @ 7.5 A, and MBRF2545CT-E3/45 is 820 mV @ 30 A. Forward voltage is current-dependent and test conditions differ across specifications. Direct comparison requires evaluation at identical current levels within the application circuit.
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