MBRD340G Equivalent & Substitute Parts

Part Overview

The MBRD340G is a Schottky rectifier diode manufactured by onsemi, rated for 40 V DC reverse voltage and 3 A average rectified current in a surface mount DPAK package. This component is classified as obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production builds and field replacements where the original part is no longer procurable.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	40 V
Current - Average Rectified (Io)	3 A
Voltage - Forward (Vf) (Max) @ If	600 mV @ 3 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	200 µA @ 40 V
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Operating Temperature - Junction	-65°C ~ 150°C
Technology	Schottky
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the MBRD340G is determined by electrical and mechanical parameter equivalence within the Schottky rectifier diode category. The critical parameters that define substitutability are:

Voltage Rating: 40 V DC reverse voltage (Vr) maximum
Current Rating: 3 A average rectified current (Io)
Forward Voltage: 600 mV maximum at 3 A forward current
Recovery Speed: Fast recovery characteristic ≤ 500ns at > 200mA
Package: TO-252-3 DPAK surface mount configuration
Reverse Leakage: 200 µA at 40 V operating condition
Temperature Range: -65°C to 150°C junction operating temperature
Compliance: ROHS3 compliant, REACH unaffected

All substitute parts listed maintain these electrical specifications and physical package compatibility, enabling direct functional replacement in circuit applications designed for the MBRD340G.

Parameter Comparison

Parameter	MBRD340G (onsemi)	CSHD3-40 TR13 PBFREE (Central Semiconductor)	VS-MBRD340-M3 (Vishay)	VS-MBRD340TR-M3 (Vishay)	VS-MBRD340TRL-M3 (Vishay)
Voltage - DC Reverse (Vr) (Max)	40 V	40 V	40 V	40 V	40 V
Current - Average Rectified (Io)	3 A	3 A	3 A	3 A	3 A
Voltage - Forward (Vf) (Max) @ If	600 mV @ 3 A	650 mV @ 3 A	600 mV @ 3 A	600 mV @ 3 A	600 mV @ 3 A
Speed	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA	Fast Recovery ≤ 500ns, > 200mA
Current - Reverse Leakage @ Vr	200 µA @ 40 V	100 µA @ 40 V	200 µA @ 40 V	200 µA @ 20 V	200 µA @ 20 V
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature - Junction	-65°C ~ 150°C	-65°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C	-40°C ~ 150°C
Technology	Schottky	Schottky	Schottky	Schottky	Schottky
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Active	Active	Active	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs)

The Vishay General Semiconductor diodes VS-MBRD340-M3, VS-MBRD340TR-M3, and VS-MBRD340TRL-M3 are active product status components that provide direct electrical and mechanical equivalence to the obsolete MBRD340G. These parts share the same base product number (MBRD340) and maintain identical forward voltage characteristics (600 mV @ 3 A), reverse voltage rating (40 V), and current capacity (3 A). All three Vishay variants are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements.

The selection between Vishay variants depends on packaging requirements: VS-MBRD340-M3 is supplied in tube packaging, while VS-MBRD340TR-M3 and VS-MBRD340TRL-M3 are supplied in tape and reel format for automated assembly processes.

Secondary Substitute (Alternative Option)

The CSHD3-40 TR13 PBFREE manufactured by Central Semiconductor Corp is an active product status alternative with equivalent voltage and current ratings. This part exhibits a slightly higher forward voltage specification (650 mV @ 3 A compared to 600 mV @ 3 A) and lower reverse leakage current (100 µA @ 40 V compared to 200 µA @ 40 V). The CSHD3-40 TR13 PBFREE maintains the same operating temperature range as the original MBRD340G (-65°C ~ 150°C) and is supplied in tape and reel packaging. ROHS3 compliance and REACH unaffected status are confirmed.

Compliance Considerations

All substitute parts maintain ROHS3 compliance and REACH unaffected status, ensuring compatibility with current environmental and regulatory standards. Moisture sensitivity level (MSL) is rated as 1 (Unlimited) across all parts, indicating no special moisture control requirements during storage or handling.

Frequently Asked Questions (FAQ)

Q: Can the VS-MBRD340-M3 directly replace the MBRD340G in existing circuit designs?

A: Yes. The VS-MBRD340-M3 maintains electrical equivalence across all critical parameters: 40 V reverse voltage rating, 3 A current capacity, 600 mV forward voltage at 3 A, and fast recovery speed characteristics. Both components use the TO-252-3 DPAK surface mount package with identical pinout and thermal characteristics. The primary difference is product status (active versus obsolete) and operating temperature range (-40°C to 150°C for Vishay versus -65°C to 150°C for onsemi).

Q: What is the difference between VS-MBRD340-M3, VS-MBRD340TR-M3, and VS-MBRD340TRL-M3?

A: These three Vishay parts are electrically identical with the same voltage, current, and thermal specifications. The differences are in packaging format: VS-MBRD340-M3 is supplied in tube packaging for manual handling and lower-volume applications, while VS-MBRD340TR-M3 and VS-MBRD340TRL-M3 are supplied in tape and reel format for automated pick-and-place assembly. Selection depends on manufacturing process requirements.

Q: Why does the CSHD3-40 TR13 PBFREE show 650 mV forward voltage instead of 600 mV?

A: The CSHD3-40 TR13 PBFREE has a maximum forward voltage specification of 650 mV at 3 A, which is 50 mV higher than the MBRD340G specification of 600 mV at 3 A. This represents the upper limit of the Central Semiconductor part's forward voltage characteristic. In practical circuit operation, actual forward voltage may be lower. This specification difference should be evaluated against circuit design margins and thermal dissipation requirements.

Q: Are there temperature range limitations when substituting the MBRD340G?

A: The MBRD340G operates from -65°C to 150°C junction temperature. The Vishay substitute parts (VS-MBRD340-M3, VS-MBRD340TR-M3, VS-MBRD340TRL-M3) operate from -40°C to 150°C. If the circuit design requires operation below -40°C junction temperature, the CSHD3-40 TR13 PBFREE maintains the full -65°C to 150°C range. For applications operating within -40°C to 150°C, all substitute parts are suitable.

Q: What is the significance of the reverse leakage current differences?

A: The MBRD340G and Vishay parts specify 200 µA reverse leakage at 40 V, while the CSHD3-40 TR13 PBFREE specifies 100 µA at 40 V. Lower reverse leakage current indicates reduced parasitic current flow when the diode is reverse-biased. The CSHD3-40 TR13 PBFREE exhibits superior leakage characteristics. For most applications, both specifications are acceptable; however, circuits with stringent low-power or high-impedance requirements may benefit from the lower leakage characteristic.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Yes. All substitute parts maintain the fast recovery speed specification of ≤ 500ns at > 200mA, which is the critical parameter for switching applications. This recovery speed characteristic ensures minimal reverse recovery time and reduced switching losses in power conversion circuits.

Q: What packaging considerations apply when selecting a substitute?

A: All parts use the TO-252-3 DPAK surface mount package with identical mechanical dimensions and pinout. Tube packaging (VS-MBRD340-M3) is suitable for manual assembly and lower-volume production. Tape and reel packaging (CSHD3-40 TR13 PBFREE, VS-MBRD340TR-M3, VS-MBRD340TRL-M3) is required for automated assembly processes. Selection depends on manufacturing capability and production volume requirements.

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