MBR5H100MFST3G Equivalent & Substitute Parts

Part Overview

The MBR5H100MFST3G is a Schottky rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 5 A average rectified current. This component is designed for surface mount applications in the 5-DFN (5x6) package configuration. The part is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain identical electrical performance and mechanical compatibility to ensure direct replacement capability.

Substiute Parts

MBR5H100MFST3G

onsemiIn Stock: 1082MBR5H100MFST3G Datasheet

Current PartRFQ

MBR5H100MFST1G

onsemiIn Stock: 1874MBR5H100MFST1G Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the MBR5H100MFST3G are identified based on strict electrical and mechanical parameter matching. The following criteria determine substitution eligibility:

Electrical Parameters:

• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5 A
• Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
• Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V

Mechanical Parameters:

• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN, 5 Leads
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Operating Temperature - Junction: -55°C ~ 175°C

All substitute parts must match these parameters exactly to ensure functional and physical compatibility with existing circuit designs and PCB layouts.

Parameter Comparison

Engineering Selection Recommendations

The MBR5H100MFST1G is a direct parametric equivalent to the MBR5H100MFST3G. Both components share identical electrical specifications, mechanical packaging, and regulatory compliance certifications. The primary distinction is product status: the MBR5H100MFST3G is classified as obsolete, while the MBR5H100MFST1G maintains active status with current manufacturing availability.

For applications currently utilizing the MBR5H100MFST3G, transition to the MBR5H100MFST1G is supported by complete parameter alignment. Both parts are ROHS3 compliant, REACH unaffected, and carry identical moisture sensitivity ratings. The substitute part is available in Cut Tape (CT) and Digi-Reel® packaging formats, providing flexibility for production environments.

Frequently Asked Questions (FAQ)

Q: Can the MBR5H100MFST1G directly replace the MBR5H100MFST3G in existing designs?

A: Yes. The MBR5H100MFST1G is a parametric equivalent with identical electrical ratings (100 V, 5 A, 730 mV forward voltage), recovery speed characteristics, and package configuration (5-DFN 5x6). No circuit modifications are required.

Q: What is the primary reason for substitution?

A: The MBR5H100MFST3G is classified as obsolete. The MBR5H100MFST1G is an active product with current manufacturing support and inventory availability.

Q: Are the package dimensions identical between these parts?

A: Yes. Both components use the 8-PowerTDFN, 5 Leads package with 5-DFN (5x6) (8-SOFL) supplier device package designation. PCB footprints are identical.

Q: Do both parts meet the same regulatory requirements?

A: Yes. Both the MBR5H100MFST3G and MBR5H100MFST1G are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings.

Q: What are the key electrical parameters that define substitution eligibility?

A: Substitution is based on matching: reverse voltage (100 V), average rectified current (5 A), forward voltage (730 mV @ 5 A), recovery speed (≤ 500ns), and reverse leakage current (100 µA @ 100 V).

Q: Is there a difference in packaging format availability?

A: The MBR5H100MFST1G is available in Cut Tape (CT) and Digi-Reel® formats. Packaging format selection depends on production and assembly requirements.

Q: What is the operating temperature range for both parts?

A: Both components operate across a junction temperature range of -55°C to 175°C, supporting applications across industrial and commercial temperature environments.