MBR30H100CT Equivalent & Substitute Parts

Part Overview

The MBR30H100CT is a Schottky diode array in a 1 Pair Common Cathode configuration rated for 100 V DC reverse voltage and 15 A average rectified current per diode. This component is manufactured by onsemi and packaged in a TO-220-3 through-hole format. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and procurement needs.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io) (per Diode)	15 A
Voltage - Forward (Vf) (Max) @ If	800 mV @ 15 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr	4.5 µA @ 100 V
Operating Temperature - Junction (Max)	175°C
Mounting Type	Through Hole
Package / Case	TO-220-3

Substitute Part Grouping Explanation

Substitution of the MBR30H100CT is determined by the following critical parameters:

Primary Substitution Criteria:

Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io) (per Diode): 15 A minimum
Package / Case: TO-220-3
Mounting Type: Through Hole

Secondary Compatibility Factors:

Voltage - Forward (Vf) (Max) @ If: 800 mV ± 50 mV @ 15 A
Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr: ≤ 100 µA @ 100 V
Operating Temperature - Junction: -55°C to 175°C minimum range

Substitute parts are classified into three categories:

Direct Equivalents: Parts with identical electrical specifications and packaging, differing only in manufacturer or product status.

Similar Substitutes: Parts with the same core ratings (100 V, TO-220-3, Schottky, Common Cathode) but with variations in forward voltage, leakage current, or current rating that remain within acceptable operating margins.

Parametric Equivalents: Parts meeting all critical electrical parameters with minor variations in secondary characteristics or temperature range.

Parameter Comparison

Part Number	Manufacturer	Product Status	Io (A)	Vf (mV) @ 15A	Ir (µA) @ 100V	Tj (Max)	RoHS Status	Packaging
MBR30H100CT	onsemi	Obsolete	15	800	4.5	175°C	Non-compliant	Bulk
MBR30H100CTG	onsemi	Active	15	800	4.5	175°C	ROHS3 Compliant	Tube
MBR30100CT	Diotec Semiconductor	Active	15	850	50	175°C	Not applicable	Bulk
MBR30100CTP	SMC Diode Solutions	Active	—	850	1000	150°C	ROHS3 Compliant	Tube
MBR30100CTU	SMC Diode Solutions	Active	—	820	1000	150°C	ROHS3 Compliant	Tube
MBR30100CT-BP	Micro Commercial Co	Active	30	850	500	150°C	ROHS3 Compliant	Tube
MBR30100CT_T0_00001	Panjit International Inc.	Active	30	800	50	175°C	ROHS3 Compliant	Tube
MBR30H100CT-E3/45	Vishay General Semiconductor - Diodes Division	Active	15	820	5	175°C	ROHS3 Compliant	Tube
SDT30A100CT	Diodes Incorporated	Active	15	730	100	150°C	ROHS3 Compliant	Tube
STPS40SM100CT	STMicroelectronics	Active	20	810	45	150°C	ROHS3 Compliant	Tube
MBR30100CTE3/TU	Microchip Technology	Active	15	800	50	175°C	ROHS3 Compliant	Tube

Engineering Selection Recommendations

Primary Recommendation: MBR30H100CTG

MBR30H100CTG is the direct equivalent manufactured by onsemi with identical electrical specifications to the obsolete MBR30H100CT. This part maintains the same 15 A current rating, 800 mV forward voltage, and 175°C maximum junction temperature. The primary distinction is product status (Active) and RoHS3 compliance. Packaging is supplied in tube format rather than bulk. This part is the preferred replacement for direct substitution.

Secondary Recommendation: MBR30H100CT-E3/45

MBR30H100CT-E3/45 manufactured by Vishay General Semiconductor provides equivalent electrical performance with 15 A current rating and 175°C maximum junction temperature. Forward voltage is 820 mV at 15 A, representing a 20 mV increase from the original specification. Reverse leakage current is 5 µA at 100 V, which is lower than the original 4.5 µA specification. This part is RoHS3 compliant and active in production.

Tertiary Recommendation: MBR30100CTE3/TU

MBR30100CTE3/TU manufactured by Microchip Technology meets the core electrical requirements with 15 A current rating, 800 mV forward voltage, and 175°C maximum junction temperature. Reverse leakage current is specified at 50 µA at 100 V. This part is RoHS3 compliant and active in production.

Alternative for Higher Current Applications: MBR30100CT_T0_00001

For applications requiring higher current capacity, MBR30100CT_T0_00001 manufactured by Panjit International Inc. provides 30 A average rectified current while maintaining 100 V reverse voltage rating and 175°C maximum junction temperature. Forward voltage is 800 mV at 15 A. This part is RoHS3 compliant and active in production.

Compliance Considerations:

All recommended active substitutes are RoHS3 compliant, addressing regulatory requirements that the original obsolete part does not meet. The original MBR30H100CT is RoHS non-compliant. Selection of an active, compliant substitute is necessary for new designs and procurement.

Frequently Asked Questions (FAQ)

Q: Can MBR30H100CTG be used as a direct replacement for MBR30H100CT?

A: Yes. MBR30H100CTG is manufactured by onsemi with identical electrical specifications: 15 A current rating, 100 V reverse voltage, 800 mV forward voltage at 15 A, and 175°C maximum junction temperature. The part is packaged in TO-220-3 through-hole format. The primary difference is that MBR30H100CTG is active in production and RoHS3 compliant, whereas MBR30H100CT is obsolete and RoHS non-compliant.

Q: What is the difference between MBR30H100CT-E3/45 and the original MBR30H100CT?

A: MBR30H100CT-E3/45 maintains the same 15 A current rating, 100 V reverse voltage, and 175°C maximum junction temperature. Forward voltage is specified at 820 mV at 15 A, compared to 800 mV for the original part. Reverse leakage current is 5 µA at 100 V, lower than the original 4.5 µA specification. Both parts use TO-220-3 packaging. MBR30H100CT-E3/45 is RoHS3 compliant and active in production.

Q: Can I use MBR30100CT-BP as a substitute for MBR30H100CT?

A: MBR30100CT-BP is rated for 30 A average rectified current, compared to 15 A for the original part. While this higher current rating provides additional capacity, the reverse leakage current is specified at 500 µA at 100 V, significantly higher than the original 4.5 µA specification. The maximum junction temperature is 150°C, lower than the original 175°C. This part is suitable only for applications where the higher current capacity is required and the increased leakage current is acceptable.

Q: What is the significance of the forward voltage difference between substitute parts?

A: Forward voltage variations between 730 mV and 850 mV at 15 A represent normal manufacturing tolerances across different manufacturers. The original MBR30H100CT specifies 800 mV at 15 A. Substitute parts with forward voltages within ±50 mV of this specification maintain equivalent thermal and electrical performance in most applications. Parts with forward voltages outside this range may require thermal analysis to confirm suitability.

Q: Are all recommended substitutes available in the same packaging?

A: All recommended substitutes are packaged in TO-220-3 through-hole format, maintaining mechanical compatibility with the original MBR30H100CT. However, packaging format differs: the original part is supplied in bulk, while active substitutes are supplied in tube packaging. This distinction affects handling and storage but does not impact electrical or mechanical compatibility.

Q: Why is RoHS compliance important for selecting a substitute?

A: The original MBR30H100CT is RoHS non-compliant. All active substitute parts listed are RoHS3 compliant. RoHS compliance is a regulatory requirement for components used in new designs and products sold in regulated markets. Selection of a compliant substitute ensures adherence to environmental and material restriction standards.

Q: Can SDT30A100CT be used as a substitute?

A: SDT30A100CT manufactured by Diodes Incorporated meets the core requirements: 15 A current rating, 100 V reverse voltage, and TO-220-3 packaging. Forward voltage is specified at 730 mV at 15 A, which is 70 mV lower than the original specification. Reverse leakage current is 100 µA at 100 V, higher than the original 4.5 µA specification. Maximum junction temperature is 150°C, lower than the original 175°C. This part is suitable for applications where the lower forward voltage and higher leakage current are acceptable.

Q: What is the difference between MBR30100CTP and MBR30100CTU?

A: Both parts are manufactured by SMC Diode Solutions and rated for 100 V reverse voltage in TO-220-3 packaging. MBR30100CTP specifies forward voltage at 850 mV at 15 A, while MBR30100CTU specifies 820 mV at 15 A. Both parts have maximum junction temperature of 150°C and reverse leakage current of 1 mA at 100 V. The primary distinction is forward voltage specification. Neither part specifies average rectified current rating.

Q: Is MBR30100CTE3/TU suitable for high-temperature applications?

A: MBR30100CTE3/TU is rated for maximum junction temperature of 175°C, matching the original MBR30H100CT specification. This rating supports high-temperature applications within the specified operating range. However, reverse leakage current is specified at 50 µA at 100 V, higher than the original 4.5 µA specification. Thermal analysis is recommended for applications operating near the maximum junction temperature limit.

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