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MBR3035PT Equivalent & Substitute Parts
Part Overview
The MBR3035PT is a Schottky diode array manufactured by onsemi, configured as 1 pair common cathode with 35 V reverse voltage rating and 30 A average rectified current per diode. The device is packaged in TO-247-3 (TO-247AD) through-hole configuration and is classified as obsolete product status. Due to obsolescence, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure supply chain availability for new production and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Diode Configuration | 1 Pair Common Cathode |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Current - Average Rectified (Io) (per Diode) | 30 A |
| Voltage - Forward (Vf) (Max) @ If | 760 mV @ 30 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 1 mA @ 35 V |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the MBR3035PT is determined by the following critical parameters: diode configuration (1 pair common cathode), technology (Schottky), reverse voltage rating, average rectified current per diode, forward voltage characteristics, switching speed, and through-hole mounting compatibility. Parts are grouped into three categories based on substitution applicability:
Direct Equivalents: Parts that maintain identical or equivalent electrical specifications and package form factor, allowing direct replacement without circuit modification.
Higher Voltage Rated Substitutes: Parts with higher reverse voltage ratings (45 V) that provide enhanced voltage margin while maintaining or exceeding current capacity and compatible package dimensions.
Lower Current Rated Substitutes: Parts with reduced average rectified current ratings (15 A) that maintain voltage specifications and package compatibility but are suitable only for applications with lower current requirements.
The key parameters governing substitution are: reverse voltage rating (must equal or exceed 35 V), average rectified current per diode (must equal or exceed 30 A for direct replacement, or be derated for lower current applications), forward voltage drop (must be compatible with circuit design), and package/case form factor (TO-247-3 or equivalent mechanical footprint).
Parameter Comparison
| Part Number | Manufacturer | Product Status | Vr (Max) | Io (per Diode) | Vf (Max) @ If | Reverse Leakage @ Vr | Tj (Operating) | Package / Case | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|
| MBR3035PT | onsemi | Obsolete | 35 V | 30 A | 760 mV @ 30 A | 1 mA @ 35 V | -65°C ~ 150°C | TO-247-3 | ROHS3 Compliant |
| MBR3035PT | Solid State Inc. | Active | 35 V | 30 A | Not Specified | Not Specified | Not Specified | TO-247-3 | ROHS3 Compliant |
| MBR3035PT-E3/45 | Vishay General Semiconductor - Diodes Division | Active | 35 V | 30 A | 760 mV @ 30 A | 1 mA @ 35 V | -65°C ~ 150°C | TO-3P-3, SC-65-3 | ROHS3 Compliant |
| DSSK60-0045B | IXYS | Active | 45 V | 30 A | 500 mV @ 30 A | 20 mA @ 45 V | -55°C ~ 150°C | TO-247-3 | ROHS3 Compliant |
| MBR3030PT | Diodes Incorporated | Active | 30 V | 30 A | 760 mV @ 30 A | 1 mA @ 30 V | -65°C ~ 150°C | TO-3P-3, SC-65-3 | ROHS3 Compliant |
| STPS30L45CW | STMicroelectronics | Active | 45 V | 15 A | 550 mV @ 15 A | 400 µA @ 45 V | 150°C (Max) | TO-247-3 | ROHS3 Compliant |
| STPS60L45CW | STMicroelectronics | Active | 45 V | 30 A | 550 mV @ 30 A | 1.5 mA @ 45 V | 150°C (Max) | TO-247-3 | ROHS3 Compliant |
Engineering Selection Recommendations
Direct Replacement (Preferred): The MBR3035PT manufactured by Solid State Inc. and the MBR3035PT-E3/45 manufactured by Vishay General Semiconductor - Diodes Division are active products with identical part numbering and electrical specifications to the obsolete onsemi MBR3035PT. Both are ROHS3 compliant and MSL 1 rated. The Vishay variant (MBR3035PT-E3/45) provides complete electrical and thermal parameter documentation matching the original specification. Selection between these direct equivalents depends on packaging preference (Tube vs. Bulk) and supplier availability.
Higher Voltage Substitutes: The STPS60L45CW (STMicroelectronics) and DSSK60-0045B (IXYS) both provide 45 V reverse voltage rating with 30 A current capacity in TO-247-3 package. These parts are suitable for applications where the circuit design permits higher voltage margin. The STPS60L45CW offers lower forward voltage drop (550 mV vs. 760 mV) and lower reverse leakage (1.5 mA vs. 1 mA at rated voltage). Both are ROHS3 compliant and active products.
Lower Current Substitute: The STPS30L45CW (STMicroelectronics) provides 45 V rating with reduced 15 A current capacity. This part is applicable only to circuit designs with maximum current requirements not exceeding 15 A per diode and is not suitable for direct replacement in 30 A applications.
Voltage-Reduced Substitute: The MBR3030PT (Diodes Incorporated) provides 30 V reverse voltage rating with 30 A current capacity. This part is suitable only for applications where the circuit design operates at or below 30 V and is not suitable for direct replacement in 35 V applications.
All recommended substitutes maintain ROHS3 compliance, MSL 1 rating, and through-hole mounting compatibility with the original design.
Frequently Asked Questions (FAQ)
Q: Can the MBR3035PT be directly replaced with the STPS60L45CW?
A: Yes, the STPS60L45CW is a functional substitute. It maintains the same 30 A current capacity and TO-247-3 package form factor. The 45 V reverse voltage rating exceeds the 35 V requirement, providing additional voltage margin. The lower forward voltage drop (550 mV vs. 760 mV) may improve circuit efficiency. Verification of circuit design compatibility with the higher voltage rating is required.
Q: What is the difference between MBR3035PT-E3/45 and the original onsemi MBR3035PT?
A: The MBR3035PT-E3/45 is manufactured by Vishay and is an active product, whereas the original onsemi MBR3035PT is obsolete. Both share identical electrical specifications: 35 V reverse voltage, 30 A current capacity, 760 mV forward voltage drop, and -65°C to 150°C operating temperature range. The primary difference is product status and manufacturer. The Vishay part is available in Tube packaging.
Q: Can the MBR3030PT replace the MBR3035PT in all applications?
A: No. The MBR3030PT has a 30 V reverse voltage rating, which is lower than the MBR3035PT's 35 V rating. It is suitable only for applications where the circuit design operates at or below 30 V. Use in circuits designed for 35 V operation may result in device failure.
Q: Is the STPS30L45CW suitable as a direct replacement?
A: No. The STPS30L45CW has a 15 A current capacity per diode, which is half the MBR3035PT's 30 A rating. It is suitable only for applications with maximum current requirements not exceeding 15 A per diode. Direct replacement in 30 A applications will result in device overstress.
Q: Are all substitute parts RoHS compliant?
A: Yes. All substitute parts listed are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original MBR3035PT specifications.
Q: What is the package compatibility between TO-247-3 and TO-3P-3?
A: TO-247-3 and TO-3P-3 are distinct package designations. TO-247-3 is the standard through-hole package for the MBR3035PT. TO-3P-3 (also designated SC-65-3) is used by some manufacturers for equivalent devices. While both are through-hole packages, mechanical footprint verification is required before substitution to ensure PCB compatibility.
Q: Does the higher forward voltage drop of DSSK60-0045B affect circuit performance?
A: The DSSK60-0045B has a 500 mV forward voltage drop at 30 A, compared to 760 mV for the MBR3035PT. This lower forward voltage drop reduces power dissipation and heat generation in the device, which may improve overall circuit efficiency. Circuit design verification is required to confirm compatibility with the different voltage characteristics.
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