MBR30200PTHC0G Equivalent & Substitute Parts

Part Overview

The MBR30200PTHC0G is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode assembly rated for 200 V DC reverse voltage and 30 A average rectified current per diode. The device is packaged in TO-247-3 through-hole configuration and is qualified to AEC-Q101 automotive standards. This part is currently active in production with 682 units in stock.

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications. Substitutes must maintain compatibility across voltage ratings, current capacity, package type, and thermal operating range to ensure functional equivalence.

Substiute Parts

MBR30200PTHC0G
Taiwan Semiconductor CorporationIn Stock: 753MBR30200PTHC0G Datasheet
MBR30200PTHC0G
Current Part
APT30S20BCTG
Microchip TechnologyIn Stock: 1604APT30S20BCTG Datasheet
APT30S20BCTG
Similar
STPS60SM200CW
STMicroelectronicsIn Stock: 5970STPS60SM200CW Datasheet
STPS60SM200CW
Similar

Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) (per Diode) 30 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 30 A
Speed Fast Recovery ≤ 500 ns, > 200 mA (Io)
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant
Grade Automotive

Substitute Part Grouping Explanation

Substitution eligibility for the MBR30200PTHC0G is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Diode Configuration: 1 Pair Common Cathode
  • Technology: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)

Allowable Variation Criteria:

  • Current - Average Rectified (Io) (per Diode): Equal to or greater than 30 A
  • Voltage - Forward (Vf) (Max) @ If: Equal to or less than 1.1 V @ 30 A
  • Operating Temperature - Junction: Must encompass or exceed -55°C to 150°C range
  • Current - Reverse Leakage @ Vr: Equal to or less than 100 µA @ 200 V

The identified substitute parts APT30S20BCTG and STPS60SM200CW satisfy all mandatory matching criteria and operate within allowable variation parameters, enabling direct functional replacement in applications designed for the MBR30200PTHC0G.

Parameter Comparison

Parameter MBR30200PTHC0G APT30S20BCTG STPS60SM200CW Unit
Manufacturer Taiwan Semiconductor Corporation Microchip Technology STMicroelectronics
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 200 200 200 V
Current - Average Rectified (Io) (per Diode) 30 45 60 A
Voltage - Forward (Vf) (Max) @ If 1.1 @ 30 A 0.85 @ 30 A 0.83 @ 30 A V
Speed Fast Recovery ≤ 500 ns, > 200 mA (Io) Fast Recovery ≤ 500 ns, > 200 mA (Io) Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr 100 @ 200 V 500 @ 200 V 50 @ 200 V µA
Operating Temperature - Junction -55 to 150 -55 to 150 -40 to 175 °C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active

Engineering Selection Recommendations

MBR30200PTHC0G (Primary Part)

The MBR30200PTHC0G is the specified component for applications requiring 30 A average rectified current at 200 V reverse voltage. This part carries AEC-Q101 automotive qualification and is ROHS3 compliant. Use this part when the design is validated for its specific electrical characteristics and thermal performance.

APT30S20BCTG (Microchip Technology Substitute)

The APT30S20BCTG provides 45 A current capacity with identical voltage rating and package configuration. Forward voltage is reduced to 0.85 V @ 30 A, resulting in lower power dissipation. Operating temperature range matches the primary part at -55°C to 150°C. This substitute is suitable for applications where increased current margin is beneficial. Reverse leakage is elevated at 500 µA @ 200 V compared to the primary part's 100 µA @ 200 V. Both parts are ROHS3 compliant and active in production.

STPS60SM200CW (STMicroelectronics Substitute)

The STPS60SM200CW provides 60 A current capacity with identical voltage rating and package configuration. Forward voltage is reduced to 0.83 V @ 30 A, providing the lowest power dissipation among the three options. Operating temperature range extends to -40°C to 175°C, offering enhanced high-temperature performance. Reverse leakage is the lowest at 50 µA @ 200 V. This substitute is suitable for applications requiring maximum current headroom and improved thermal characteristics. Both parts are ROHS3 compliant and active in production.

All three parts are active products with current inventory availability and meet regulatory compliance requirements for industrial and automotive applications.

Frequently Asked Questions (FAQ)

Q: Can APT30S20BCTG or STPS60SM200CW be used as direct replacements for MBR30200PTHC0G?

A: Yes. Both substitute parts maintain identical diode configuration (1 Pair Common Cathode), Schottky technology, 200 V reverse voltage rating, TO-247-3 package, and through-hole mounting. All three parts meet fast recovery speed specifications and operate within compatible temperature ranges. The substitutes provide equal or greater current capacity, making them functionally equivalent for circuit applications designed for the MBR30200PTHC0G.

Q: What are the differences in forward voltage between these parts?

A: The MBR30200PTHC0G has a maximum forward voltage of 1.1 V @ 30 A. The APT30S20BCTG operates at 0.85 V @ 30 A, and the STPS60SM200CW operates at 0.83 V @ 30 A. Lower forward voltage results in reduced power dissipation and heat generation during operation. Applications sensitive to power loss may benefit from the lower forward voltage characteristics of the substitute parts.

Q: Are there differences in reverse leakage current?

A: Yes. The MBR30200PTHC0G specifies 100 µA @ 200 V reverse leakage. The APT30S20BCTG specifies 500 µA @ 200 V, while the STPS60SM200CW specifies 50 µA @ 200 V. Applications requiring minimal reverse leakage should prioritize the STPS60SM200CW. Applications with higher leakage tolerance can use any of the three parts.

Q: Do all parts have the same operating temperature range?

A: The MBR30200PTHC0G and APT30S20BCTG both operate from -55°C to 150°C junction temperature. The STPS60SM200CW extends the upper limit to 175°C, providing enhanced performance in high-temperature environments. All three parts accommodate standard industrial and automotive temperature requirements.

Q: Are all parts RoHS compliant?

A: Yes. All three parts are ROHS3 compliant and carry active product status. All parts are unaffected by REACH regulations and classified under ECCN EAR99.

Q: What is the significance of the current rating differences?

A: The MBR30200PTHC0G is rated for 30 A average rectified current per diode. The APT30S20BCTG provides 45 A capacity, and the STPS60SM200CW provides 60 A capacity. Higher current ratings provide design margin for applications operating near the primary part's maximum specification. Substitutes with higher current ratings do not require circuit modifications and operate safely at or below the original design current.

Q: Are the package dimensions identical?

A: All three parts use TO-247-3 package configuration with through-hole mounting. Physical dimensions and pin configurations are identical, enabling direct mechanical substitution on printed circuit boards designed for the MBR30200PTHC0G.

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