MBR30100CT Equivalent & Substitute Parts

Part Overview

The MBR30100CT is a Schottky diode array in a 1 Pair Common Cathode configuration rated for 100 V DC reverse voltage and 30 A average rectified current per diode. Manufactured by Taiwan Semiconductor Corporation, this through-hole TO-220-3 package component is classified as Active product status and is RoHS3 compliant. Substitute parts are identified when equivalent electrical performance is required within the same package family, accounting for variations in current rating, forward voltage characteristics, and thermal specifications across multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Diode Configuration	1 Pair Common Cathode	—
Technology	Schottky	—
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io) (per Diode)	30	A
Voltage - Forward (Vf) (Max) @ If	940 mV @ 30 A	—
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	200	µA @ 100 V
Operating Temperature - Junction	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MBR30100CT is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Diode Configuration: 1 Pair Common Cathode (mandatory match)
Technology: Schottky (mandatory match)
Voltage - DC Reverse (Vr) (Max): 100 V (mandatory match)
Mounting Type: Through Hole (mandatory match)
Package / Case: TO-220-3 (mandatory match)
Speed: Fast Recovery ≤ 500ns, > 200mA (Io) (mandatory match)

Secondary Substitution Parameters (allowable variation):

Current - Average Rectified (Io) (per Diode): Equal to or greater than 30 A
Voltage - Forward (Vf) (Max) @ If: Variation acceptable within thermal and application constraints
Current - Reverse Leakage @ Vr: Variation acceptable
Operating Temperature - Junction: Variation acceptable if minimum temperature ≥ -55°C and maximum temperature ≥ 150°C
RoHS Status: ROHS3 Compliant or equivalent compliance required

Substitute parts are grouped by current rating capability. Parts rated at 30 A or higher are direct equivalents. Parts rated below 30 A are classified as similar substitutes suitable for reduced current applications.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io (per Diode) [A]	Vf (Max) [mV]	Reverse Leakage [µA @ 100V]	Tj (Min-Max) [°C]	Package	RoHS Status
MBR30100CT	Taiwan Semiconductor Corporation	100	30	940 @ 30 A	200	-55 to 150	TO-220-3	ROHS3 Compliant
MBR30100CT	Diotec Semiconductor	100	15	850 @ 15 A	50	-50 to 175	TO-220-3	Not applicable
MBR10100CT-BP	Micro Commercial Co	100	10	850 @ 5 A	200	-55 to 150	TO-220-3	ROHS3 Compliant
MBR10100CT-E3/4W	Vishay General Semiconductor - Diodes Division	100	5	850 @ 5 A	100	-65 to 150	TO-220-3	ROHS3 Compliant
MBR10100CT-G1	Diodes Incorporated	100	5	840 @ 5 A	50	-55 to 150	TO-220-3	ROHS3 Compliant
MBR10H100CT-E3/45	Vishay General Semiconductor - Diodes Division	100	5	760 @ 5 A	3.5	-65 to 175	TO-220-3	ROHS3 Compliant
MBR20100CT-BP	Micro Commercial Co	100	10	950 @ 20 A	150	-55 to 150	TO-220-3	ROHS3 Compliant
MBR20100CT-E3/4W	Vishay General Semiconductor - Diodes Division	100	10	800 @ 10 A	100	-65 to 150	TO-220-3	ROHS3 Compliant
MBR20100CT-G1	Diodes Incorporated	100	10	840 @ 10 A	50	-55 to 175	TO-220-3	ROHS3 Compliant
MBR20100CT-M3/4W	Vishay General Semiconductor - Diodes Division	100	10	800 @ 10 A	100	-65 to 150	TO-220-3	ROHS3 Compliant
MBR20H100CT-E3/45	Vishay General Semiconductor - Diodes Division	100	10	770 @ 10 A	4.5	-65 to 150	TO-220-3	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (30 A Rating): The MBR30100CT manufactured by Diotec Semiconductor shares identical voltage and package specifications. However, this part is rated at 15 A per diode, representing a reduced current capability. Selection of this part is appropriate only when application current requirements do not exceed 15 A per diode. RoHS compliance status differs from the primary part.

Reduced Current Substitutes (10 A Rating): Parts MBR20100CT-BP, MBR20100CT-E3/4W, MBR20100CT-G1, MBR20100CT-M3/4W, and MBR20H100CT-E3/45 are rated at 10 A per diode. All maintain 100 V reverse voltage rating and TO-220-3 package configuration. These parts are suitable for applications requiring 10 A or less per diode. All listed 10 A variants carry ROHS3 compliance. MBR20100CT-G1 and MBR20H100CT-E3/45 support extended operating temperature ranges to 175°C maximum.

Lower Current Substitutes (5 A Rating): Parts MBR10100CT-E3/4W, MBR10100CT-G1, and MBR10H100CT-E3/45 are rated at 5 A per diode. These are suitable for applications with significantly reduced current requirements. MBR10100CT-G1 carries AEC-Q101 automotive qualification. MBR10H100CT-E3/45 exhibits superior reverse leakage characteristics (3.5 µA) and extended temperature range (-65°C to 175°C).

Lowest Current Substitute (10 A Rating): MBR10100CT-BP is rated at 10 A per diode and carries ROHS3 compliance with standard temperature range (-55°C to 150°C).

All substitute parts maintain Fast Recovery speed specification (≤ 500ns, > 200mA) and Schottky technology. Selection should be based on application current requirements and thermal operating conditions.

Frequently Asked Questions (FAQ)

Q: Can MBR30100CT be replaced with a lower current-rated part such as MBR20100CT-E3/4W?

A: Yes, provided the application current requirement does not exceed 10 A per diode. The MBR20100CT-E3/4W maintains identical 100 V reverse voltage rating, Schottky technology, Fast Recovery speed, and TO-220-3 package. Forward voltage characteristics differ slightly (800 mV @ 10 A versus 940 mV @ 30 A for the primary part). Thermal design must account for the reduced current capability.

Q: Are all substitute parts RoHS3 compliant?

A: Most substitute parts listed carry ROHS3 Compliant status. The exception is MBR30100CT manufactured by Diotec Semiconductor, which shows "Not applicable" RoHS status. Verify compliance requirements for your specific application before selection.

Q: What is the difference between MBR20100CT-E3/4W and MBR20H100CT-E3/45?

A: Both parts are rated at 10 A per diode with 100 V reverse voltage and TO-220-3 package. The MBR20H100CT-E3/45 exhibits lower forward voltage (770 mV @ 10 A versus 800 mV @ 10 A) and significantly lower reverse leakage current (4.5 µA @ 100 V versus 100 µA @ 100 V). The "H" designation indicates enhanced performance characteristics. Operating temperature range is identical (-65°C to 150°C).

Q: Can MBR10100CT-G1 be used in automotive applications?

A: Yes. MBR10100CT-G1 carries AEC-Q101 qualification and Automotive grade designation. This part is rated at 5 A per diode and is suitable for automotive applications requiring reduced current capability within the 100 V reverse voltage specification.

Q: What packaging options are available for these substitute parts?

A: All listed substitute parts utilize TO-220-3 through-hole package configuration. Packaging format (Tube) is specified for most parts. The primary MBR30100CT by Taiwan Semiconductor Corporation does not specify packaging format in the provided data.

Q: How do forward voltage characteristics affect part selection?

A: Forward voltage (Vf) determines power dissipation at specified current levels. Lower Vf values result in reduced heat generation. For example, MBR10H100CT-E3/45 exhibits 760 mV @ 5 A compared to 850 mV @ 5 A for MBR10100CT-E3/4W. In high-current or thermally constrained applications, lower Vf parts reduce thermal load on the component and surrounding circuitry.

Q: Are there current rating limitations when substituting the MBR30100CT?

A: Yes. The primary part is rated at 30 A per diode. Substitute parts range from 5 A to 15 A per diode. Application circuits must be designed to operate within the current rating of the selected substitute. Exceeding the rated current will result in component failure and potential circuit damage.

Q: What is the significance of reverse leakage current variation among substitute parts?

A: Reverse leakage current (Ir) affects standby power consumption and circuit performance at reverse bias conditions. Lower leakage values (such as 3.5 µA in MBR10H100CT-E3/45) are beneficial in precision applications and reduce parasitic current paths. Higher leakage values (such as 200 µA in MBR10100CT-BP) are acceptable in general rectification applications where standby current is not critical.

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