MBR2535CT Equivalent & Substitute Parts

Part Overview

The MBR2535CT is a Schottky diode array in a 1 Pair Common Cathode configuration manufactured by Diodes Incorporated. This component features a 35 V DC reverse voltage rating and 30 A average rectified current per diode, housed in a TO-220-3 through-hole package. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

MBR2535CT
Diodes IncorporatedIn Stock: 21018MBR2535CT Datasheet
MBR2535CT
Current Part
MBR2535CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1030MBR2535CT-E3/45 Datasheet
MBR2535CT-E3/45
Direct
STPS3045CT
STMicroelectronicsIn Stock: 38456STPS3045CT Datasheet
STPS3045CT
MFR Recommended
MBR2535CTG
onsemiIn Stock: 2049MBR2535CTG Datasheet
MBR2535CTG
Parametric Equivalent
MBR3035CTHC0G
Taiwan Semiconductor CorporationIn Stock: 836MBR3035CTHC0G Datasheet
MBR3035CTHC0G
Parametric Equivalent
MBR3035PT C0G
Taiwan Semiconductor CorporationIn Stock: 1036MBR3035PT C0G Datasheet
MBR3035PT C0G
Parametric Equivalent
MBR3035PTHC0G
Taiwan Semiconductor CorporationIn Stock: 1162MBR3035PTHC0G Datasheet
MBR3035PTHC0G
Parametric Equivalent

Key Parameters

Parameter Value
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 35 V
Current - Average Rectified (Io) (per Diode) 30 A
Voltage - Forward (Vf) (Max) @ If 820 mV @ 30 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 35 V
Operating Temperature - Junction -65°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the MBR2535CT is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Diode configuration must be 1 Pair Common Cathode
  • Technology must be Schottky
  • Voltage - DC Reverse (Vr) must be ≥ 35 V
  • Current - Average Rectified (Io) must be ≥ 30 A per diode
  • Voltage - Forward (Vf) must be ≤ 820 mV @ 30 A
  • Speed must be Fast Recovery ≤ 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr must be ≤ 200 µA @ 35 V
  • Operating Temperature - Junction must span -65°C minimum to 150°C minimum

Mechanical Compatibility Requirements:

  • Mounting type must be Through Hole
  • Package / Case must be TO-220-3 or compatible footprint variant

Compliance Requirements:

  • RoHS3 Compliant

Substitute parts are grouped into three categories: Direct Manufacturer Alternatives (same electrical specifications, different manufacturer), Manufacturer Recommended Alternatives (higher voltage rating), and Parametric Equivalents (same electrical specifications with package variants or automotive qualification).

Parameter Comparison

Parameter MBR2535CT (Main) MBR2535CT-E3/45 STPS3045CT MBR2535CTG MBR3035CTHC0G MBR3035PT C0G MBR3035PTHC0G
Manufacturer Diodes Incorporated Vishay General Semiconductor - Diodes Division STMicroelectronics onsemi Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Obsolete Active Active Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 35 V 35 V 45 V 35 V 35 V 35 V 35 V
Current - Average Rectified (Io) (per Diode) 30 A 15 A 15 A 30 A 30 A 30 A 30 A
Voltage - Forward (Vf) (Max) @ If 820 mV @ 30 A 820 mV @ 30 A 570 mV @ 15 A 820 mV @ 30 A 820 mV @ 30 A 820 mV @ 30 A 820 mV @ 30 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 35 V 200 µA @ 35 V 200 µA @ 45 V 200 µA @ 35 V 200 µA @ 35 V 1 mA @ 35 V 1 mA @ 35 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 200°C (Max) -65°C ~ 175°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-247-3 TO-247-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Automotive Grade No No No No Yes (AEC-Q101) No Yes (AEC-Q101)

Engineering Selection Recommendations

Full Electrical and Mechanical Equivalents (TO-220-3 Package):

The MBR2535CTG (onsemi) is a parametric equivalent offering identical electrical specifications to the MBR2535CT with active product status. This part maintains 35 V reverse voltage, 30 A average rectified current, and 820 mV forward voltage characteristics. The MBR2535CTG is suitable for direct replacement in existing designs without circuit modification.

Current-Limited Alternatives (TO-220-3 Package):

The MBR2535CT-E3/45 (Vishay General Semiconductor - Diodes Division) provides 35 V reverse voltage in an active product with TO-220-3 packaging. However, this part is rated for 15 A average rectified current per diode, which is 50% of the main part specification. This substitute is applicable only in applications where the 30 A current requirement can be reduced or where parallel configurations are implemented.

Higher Voltage Alternative (TO-220-3 Package):

The STPS3045CT (STMicroelectronics) is a manufacturer-recommended alternative featuring 45 V reverse voltage and 15 A average rectified current. This part offers enhanced voltage margin with reduced current capacity. The STPS3045CT exhibits lower forward voltage (570 mV @ 15 A) and extended maximum junction temperature (200°C). This substitute is applicable in designs where voltage headroom is prioritized and current requirements do not exceed 15 A per diode.

Parametric Equivalents with Package Variants:

The MBR3035CTHC0G and MBR3035PTHC0G (Taiwan Semiconductor Corporation) provide identical electrical specifications to the MBR2535CT with automotive-grade qualification (AEC-Q101). The MBR3035CTHC0G maintains TO-220-3 packaging, while the MBR3035PTHC0G uses TO-247-3 packaging. These parts are suitable for applications requiring automotive-grade components with enhanced reliability documentation.

The MBR3035PT C0G (Taiwan Semiconductor Corporation) offers TO-247-3 packaging with identical electrical specifications but without automotive qualification. This part is applicable in designs where the larger TO-247-3 footprint provides thermal or mechanical advantages.

Product Status Consideration:

All substitute parts listed maintain active product status, ensuring long-term availability and supply chain continuity compared to the obsolete MBR2535CT.

Frequently Asked Questions (FAQ)

Q: Can the MBR2535CT-E3/45 be used as a direct replacement for the MBR2535CT?

A: The MBR2535CT-E3/45 shares identical voltage and package specifications but is rated for 15 A average rectified current per diode versus the MBR2535CT's 30 A rating. Direct replacement is not suitable for applications requiring the full 30 A current capacity. Parallel configurations or circuit redesign may be necessary.

Q: What is the primary difference between the STPS3045CT and the MBR2535CT?

A: The STPS3045CT features 45 V reverse voltage compared to the MBR2535CT's 35 V, providing 10 V additional voltage margin. However, the STPS3045CT is rated for 15 A average rectified current versus the MBR2535CT's 30 A. The STPS3045CT also exhibits lower forward voltage (570 mV @ 15 A) and higher maximum junction temperature (200°C).

Q: Are the MBR3035 series parts compatible with the MBR2535CT footprint?

A: The MBR3035CTHC0G maintains TO-220-3 packaging identical to the MBR2535CT and is footprint-compatible. The MBR3035PT C0G and MBR3035PTHC0G use TO-247-3 packaging, which requires different PCB layout and mounting hardware. TO-247-3 packages are not directly interchangeable with TO-220-3 without board redesign.

Q: What is the significance of AEC-Q101 qualification on the MBR3035CTHC0G and MBR3035PTHC0G?

A: AEC-Q101 qualification indicates automotive-grade reliability testing and documentation. These parts are suitable for automotive applications requiring enhanced quality assurance. Non-automotive applications do not require this qualification.

Q: Can the MBR2535CTG be used in all applications where the MBR2535CT was originally specified?

A: Yes. The MBR2535CTG (onsemi) is a parametric equivalent with identical electrical specifications (35 V, 30 A, 820 mV forward voltage) and TO-220-3 packaging. The primary difference is active product status and extended maximum junction temperature (-65°C ~ 175°C versus -65°C ~ 150°C).

Q: What is the difference between the MBR3035PT C0G and MBR3035PTHC0G?

A: Both parts share identical electrical specifications and TO-247-3 packaging. The MBR3035PTHC0G includes automotive-grade qualification (AEC-Q101), while the MBR3035PT C0G does not. Selection depends on automotive application requirements.

Q: Why does the MBR3035PT C0G show higher reverse leakage current (1 mA @ 35 V) compared to the MBR2535CT (200 µA @ 35 V)?

A: The MBR3035PT C0G exhibits 1 mA reverse leakage current, which is higher than the MBR2535CT specification. This parameter difference must be evaluated in applications where reverse leakage current is a critical design constraint.

Q: Is the MBR2535CTG suitable for high-temperature applications?

A: The MBR2535CTG supports operating junction temperatures from -65°C to 175°C, which is 25°C higher than the MBR2535CT maximum of 150°C. This extended temperature range makes the MBR2535CTG suitable for applications requiring higher thermal margins.

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