MBR20H100CT Equivalent & Substitute Parts

Part Overview

The MBR20H100CT is a Schottky diode array manufactured by onsemi, configured as 1 pair common cathode with 100 V reverse voltage rating and 10 A average rectified current per diode. The device is packaged in TO-220-3 through-hole configuration and operates across a junction temperature range of -65°C to 175°C.

The MBR20H100CT is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production and field replacements.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io) (per Diode)	10 A
Voltage - Forward (Vf) (Max) @ If	770 mV @ 10 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	4.5 µA @ 100 V
Operating Temperature - Junction	-65°C ~ 175°C
Mounting Type	Through Hole
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant

Substitute Part Grouping Explanation

Substitution of the MBR20H100CT is determined by the following critical parameters:

Electrical Parameters:

Voltage - DC Reverse (Vr) (Max): 100 V minimum
Current - Average Rectified (Io) (per Diode): 10 A minimum
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky or equivalent fast-recovery technology

Mechanical Parameters:

Mounting Type: Through Hole
Package / Case: TO-220-3 or compatible through-hole package

Thermal Parameters:

Operating Temperature - Junction: Must support -65°C to 175°C range or equivalent

Substitute parts are categorized into two groups:

Direct Equivalents: Parts with identical electrical specifications, forward voltage characteristics, and reverse leakage current at rated conditions. These parts are pin-compatible and functionally interchangeable without circuit modification.

Parametric Equivalents: Parts meeting or exceeding the minimum electrical requirements but with variations in forward voltage, reverse leakage, or temperature range. These parts are functionally compatible but may exhibit different thermal or electrical performance characteristics.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io (per Diode)	Vf (Max) @ If	Ir @ Vr	Tj (Operating)	Package	Product Status	RoHS Status
MBR20H100CT	onsemi	100 V	10 A	770 mV @ 10 A	4.5 µA @ 100 V	-65°C ~ 175°C	TO-220-3	Obsolete	RoHS non-compliant
MBR10100CT	Taiwan Semiconductor Corporation	100 V	10 A	950 mV @ 10 A	100 µA @ 100 V	-55°C ~ 150°C	TO-220-3	Discontinued at DiGi Electronics	ROHS3 Compliant
MBR20100CT-E3/4W	Vishay General Semiconductor - Diodes Division	100 V	10 A	800 mV @ 10 A	100 µA @ 100 V	-65°C ~ 150°C	TO-220-3	Active	ROHS3 Compliant
SBR10100CT	Diodes Incorporated	100 V	5 A	800 mV @ 5 A	100 µA @ 100 V	-65°C ~ 150°C	TO-220-3	Active	ROHS3 Compliant
SBR10U100CT	Diodes Incorporated	100 V	5 A	670 mV @ 5 A	200 µA @ 100 V	-65°C ~ 175°C	TO-220-3	Active	ROHS3 Compliant
SDT30A100CT	Diodes Incorporated	100 V	15 A	730 mV @ 15 A	100 µA @ 100 V	-55°C ~ 150°C	TO-220-3	Active	ROHS3 Compliant
STPS20H100CR	STMicroelectronics	100 V	10 A	770 mV @ 10 A	4.5 µA @ 100 V	175°C (Max)	TO-262-3 Long Leads, I2PAK	Active	ROHS3 Compliant
MBR20H100CT-E3/45	Vishay General Semiconductor - Diodes Division	100 V	10 A	770 mV @ 10 A	4.5 µA @ 100 V	-65°C ~ 150°C	TO-220-3	Active	ROHS3 Compliant
STPS20H100CT	STMicroelectronics	100 V	10 A	770 mV @ 10 A	4.5 µA @ 100 V	175°C (Max)	TO-220-3	Active	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent Selection:

MBR20H100CT-E3/45 and STPS20H100CT are direct electrical equivalents with identical forward voltage (770 mV @ 10 A) and reverse leakage current (4.5 µA @ 100 V) specifications. Both parts are manufactured by active suppliers and comply with ROHS3 standards. MBR20H100CT-E3/45 maintains the full operating temperature range of the original part (-65°C to 150°C). STPS20H100CT specifies maximum junction temperature of 175°C without lower temperature limit documentation.

Parametric Equivalent Selection:

MBR20100CT-E3/4W is an active substitute from Vishay with identical current and voltage ratings. Forward voltage is 800 mV @ 10 A, representing a 30 mV increase over the original specification. Reverse leakage is 100 µA @ 100 V, representing a 22.2× increase. Operating temperature range is -65°C to 150°C. This part is suitable for applications where the increased forward voltage drop and leakage current are acceptable.

SDT30A100CT is an active substitute from Diodes Incorporated with higher current rating (15 A per diode). Forward voltage is 730 mV @ 15 A. This part is suitable for applications requiring higher current capacity. Operating temperature range is -55°C to 150°C, which does not extend to the original -65°C minimum.

SBR10100CT and SBR10U100CT are active substitutes from Diodes Incorporated using Super Barrier technology. Both parts are rated for 5 A per diode, which is 50% of the original 10 A rating. These parts are suitable only for applications with reduced current requirements. SBR10U100CT offers lower forward voltage (670 mV @ 5 A) and extended temperature range (-65°C to 175°C).

MBR10100CT is a discontinued substitute from Taiwan Semiconductor Corporation with identical current and voltage ratings. Forward voltage is 950 mV @ 10 A, representing a 180 mV increase. Reverse leakage is 100 µA @ 100 V. Operating temperature range is -55°C to 150°C. This part is not recommended for new designs due to discontinued status.

STPS20H100CR is an active substitute from STMicroelectronics with identical electrical specifications but different package (TO-262-3 Long Leads, I2PAK). This part requires different PCB layout and is not pin-compatible with TO-220-3 footprints.

Compliance Considerations:

The original MBR20H100CT is RoHS non-compliant. All active substitute parts listed are ROHS3 compliant, making them suitable for applications subject to RoHS regulations.

Frequently Asked Questions (FAQ)

Q: Can MBR20H100CT-E3/45 be used as a direct replacement for MBR20H100CT?

A: Yes. MBR20H100CT-E3/45 is a direct electrical equivalent with identical forward voltage (770 mV @ 10 A), reverse leakage current (4.5 µA @ 100 V), and current rating (10 A). Both parts use TO-220-3 packaging and are pin-compatible. The substitute part is manufactured by an active supplier and complies with ROHS3 standards.

Q: What is the difference between direct equivalents and parametric equivalents?

A: Direct equivalents have identical electrical specifications at rated conditions, including forward voltage and reverse leakage current. Parametric equivalents meet or exceed minimum electrical requirements but exhibit variations in forward voltage, reverse leakage, or temperature range. Parametric equivalents are functionally compatible but may produce different thermal or electrical performance in the circuit.

Q: Can STPS20H100CT be used in place of MBR20H100CT?

A: Yes. STPS20H100CT is a direct electrical equivalent with identical forward voltage (770 mV @ 10 A), reverse leakage current (4.5 µA @ 100 V), and current rating (10 A). Both parts use TO-220-3 packaging and are pin-compatible. The substitute part is manufactured by an active supplier and complies with ROHS3 standards. Maximum junction temperature is specified as 175°C without documented lower temperature limit.

Q: Why are SBR10100CT and SBR10U100CT listed as substitutes if they have lower current ratings?

A: SBR10100CT and SBR10U100CT are listed as parametric equivalents because they meet the voltage and package requirements but are rated for 5 A per diode instead of 10 A. These parts are suitable only for applications where the circuit current requirement does not exceed 5 A per diode. Using these parts in circuits requiring 10 A operation will result in device failure.

Q: Is STPS20H100CR compatible with existing TO-220-3 PCB layouts?

A: No. STPS20H100CR uses TO-262-3 Long Leads (I2PAK) packaging, which is not pin-compatible with TO-220-3 footprints. This part requires different PCB layout and cannot be used as a direct board-level replacement without redesign.

Q: What is the impact of increased forward voltage in MBR20100CT-E3/4W?

A: MBR20100CT-E3/4W has forward voltage of 800 mV @ 10 A compared to 770 mV @ 10 A in the original part. This 30 mV increase results in higher power dissipation and heat generation. In a 10 A circuit, this represents approximately 0.3 W additional power loss per diode. Thermal design must account for this increased dissipation.

Q: Can the MBR20H100CT be replaced with SDT30A100CT for higher current applications?

A: SDT30A100CT has a higher current rating (15 A per diode) and lower forward voltage (730 mV @ 15 A), making it suitable for applications requiring higher current capacity. However, the operating temperature range is -55°C to 150°C, which does not extend to the original -65°C minimum. This part is suitable only for applications where the reduced temperature range is acceptable.

Q: Are all substitute parts RoHS compliant?

A: All active substitute parts listed are ROHS3 compliant. The original MBR20H100CT is RoHS non-compliant. If RoHS compliance is required, any of the active substitute parts may be used.

Q: What is the reverse leakage current difference between MBR20H100CT and its substitutes?

A: The original MBR20H100CT has reverse leakage of 4.5 µA @ 100 V. Direct equivalents (MBR20H100CT-E3/45 and STPS20H100CT) maintain this specification. Parametric equivalents have higher reverse leakage: MBR20100CT-E3/4W and SDT30A100CT have 100 µA @ 100 V, and SBR10U100CT has 200 µA @ 100 V. Higher reverse leakage increases standby power consumption and heat generation.

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