MBR2050PTHC0G Equivalent & Substitute Parts

Part Overview

The MBR2050PTHC0G is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode with 50 V reverse voltage rating and 20 A average rectified current per diode. The device is packaged in TO-247-3 through-hole format and qualified to AEC-Q101 automotive standards.

The MBR2050PTHC0G is currently discontinued at DiGi Electronics. Equivalent and substitute parts are available to maintain design continuity and support ongoing production requirements. Substitute selection depends on matching electrical parameters, package compatibility, and application voltage/current requirements.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	50 V
Current - Average Rectified (Io) (per Diode)	20 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 20 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr	100 µA @ 50 V
Operating Temperature - Junction	-55°C ~ 150°C
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the MBR2050PTHC0G are classified into two categories based on electrical parameter alignment:

Direct Equivalents maintain identical electrical specifications across all critical parameters: 50 V reverse voltage, 20 A average rectified current, 950 mV forward voltage at 20 A, and identical thermal operating range. These parts are interchangeable without circuit redesign.

Similar Substitutes provide higher current capability (30 A) and lower reverse voltage (45 V) compared to the original specification. These parts operate within the same package format (TO-247-3) and maintain Schottky technology, fast recovery speed, and automotive qualification. Selection of similar substitutes requires verification that the application circuit can tolerate the reduced voltage rating while benefiting from increased current capacity.

Key parameters determining substitution eligibility:

Diode Configuration: 1 Pair Common Cathode (required)
Technology: Schottky (required)
Package / Case: TO-247-3 (required)
Mounting Type: Through Hole (required)
Operating Temperature Range: -55°C ~ 150°C (required)
RoHS Status: ROHS3 Compliant (required)

Parameter Comparison

Parameter	MBR2050PTHC0G (Main)	MBR2050PTH (Direct Equivalent)	MBR2050PT C0G (Parametric Equivalent)	DSB60C45HB (Similar)	DSSK60-0045B (Similar)
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	IXYS	IXYS
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode
Technology	Schottky	Schottky	Schottky	Schottky	Schottky
Voltage - DC Reverse (Vr) (Max)	50 V	50 V	50 V	45 V	45 V
Current - Average Rectified (Io) (per Diode)	20 A	20 A (DC)	20 A	30 A	30 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 20 A	950 mV @ 20 A	950 mV @ 20 A	620 mV @ 30 A	500 mV @ 30 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr	100 µA @ 50 V	100 µA @ 50 V	100 µA @ 50 V	10 mA @ 45 V	20 mA @ 45 V
Operating Temperature - Junction	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Discontinued at DiGi Electronics	Active	Active	Active	Active

Engineering Selection Recommendations

Direct Equivalents (MBR2050PTH and MBR2050PT C0G):

Both MBR2050PTH and MBR2050PT C0G are manufactured by Taiwan Semiconductor Corporation and provide complete electrical parameter equivalence to the MBR2050PTHC0G. These parts maintain 50 V reverse voltage, 20 A average rectified current, and identical forward voltage characteristics. Both are currently in active product status with ROHS3 compliance and AEC-Q101 automotive qualification. These parts are suitable for direct substitution without circuit modification.

Similar Substitutes (DSB60C45HB and DSSK60-0045B):

The DSB60C45HB and DSSK60-0045B are manufactured by IXYS and provide higher current capability (30 A) at reduced reverse voltage (45 V). Both maintain Schottky technology, fast recovery speed characteristics, and automotive-grade qualification. The DSB60C45HB exhibits 620 mV forward voltage at 30 A, while the DSSK60-0045B exhibits 500 mV forward voltage at 30 A. Both are currently in active product status with ROHS3 compliance.

Selection of similar substitutes is appropriate for applications where the circuit operates at reverse voltages below 45 V and where increased current capacity provides design margin or performance improvement. The reduced forward voltage of the DSSK60-0045B may provide thermal efficiency benefits in high-current applications.

Frequently Asked Questions (FAQ)

Q: Can MBR2050PTH be used as a direct replacement for MBR2050PTHC0G?

A: Yes. MBR2050PTH provides identical electrical specifications across all critical parameters: 50 V reverse voltage, 20 A average rectified current, 950 mV forward voltage at 20 A, and -55°C to 150°C operating temperature range. Both are manufactured by Taiwan Semiconductor Corporation and packaged in TO-247-3 format. No circuit modification is required.

Q: What is the difference between MBR2050PT C0G and MBR2050PTH?

A: MBR2050PT C0G and MBR2050PTH are parametrically equivalent parts from Taiwan Semiconductor Corporation with identical electrical specifications. The designation difference reflects manufacturing or packaging variants. Both provide 50 V reverse voltage, 20 A average rectified current, and are suitable for direct substitution.

Q: Can DSB60C45HB replace MBR2050PTHC0G in all applications?

A: DSB60C45HB is suitable for applications where the circuit operates at reverse voltages not exceeding 45 V. The part provides higher current capability (30 A versus 20 A) and lower forward voltage (620 mV at 30 A versus 950 mV at 20 A). Applications requiring the full 50 V reverse voltage rating of the original part cannot use this substitute.

Q: What are the key differences between DSB60C45HB and DSSK60-0045B?

A: Both parts are manufactured by IXYS with identical 45 V reverse voltage and 30 A current ratings in TO-247-3 package format. The primary difference is forward voltage: DSB60C45HB exhibits 620 mV at 30 A, while DSSK60-0045B exhibits 500 mV at 30 A. The DSSK60-0045B provides lower forward voltage drop, resulting in reduced power dissipation in high-current applications.

Q: Are all substitute parts AEC-Q101 qualified?

A: Yes. MBR2050PTH, MBR2050PT C0G, DSB60C45HB, and DSSK60-0045B are all AEC-Q101 qualified automotive-grade components. All parts maintain -55°C to 150°C operating temperature range and ROHS3 compliance.

Q: What is the impact of using a 45 V rated part in a 50 V circuit?

A: Using a 45 V rated part in a circuit designed for 50 V reverse voltage operation exceeds the component's maximum voltage specification. This substitution is not appropriate and may result in component failure or reduced reliability. Similar substitutes (DSB60C45HB and DSSK60-0045B) are suitable only for applications where the actual reverse voltage stress does not exceed 45 V.

Q: Are there packaging differences between the substitute parts?

A: All substitute parts use TO-247-3 through-hole package format compatible with the original MBR2050PTHC0G. No PCB layout modification is required for direct equivalents (MBR2050PTH and MBR2050PT C0G). Similar substitutes (DSB60C45HB and DSSK60-0045B) also use identical TO-247-3 packaging.

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