MBR2035CT Equivalent & Substitute Parts

Part Overview

The MBR2035CT is a Schottky diode array manufactured by onsemi, configured as 1 pair common cathode with a maximum reverse voltage of 35 V and average rectified current of 20 A per diode. The device is packaged in TO-220-3 through-hole configuration and features fast recovery characteristics with a maximum forward voltage of 840 mV at 20 A.

The MBR2035CT carries a product status of "Not For New Designs," indicating it is obsolete or being phased out. Identification of equivalent and substitute parts is necessary for design continuity, inventory management, and sourcing alternatives that maintain functional compatibility within specified electrical and mechanical parameters.

Substiute Parts

MBR2035CT
onsemiIn Stock: 2064MBR2035CT Datasheet
MBR2035CT
Current Part
MBR1535CTHC0G
Taiwan Semiconductor CorporationIn Stock: 898MBR1535CTHC0G Datasheet
MBR1535CTHC0G
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STPS2045CT
STMicroelectronicsIn Stock: 25174STPS2045CT Datasheet
STPS2045CT
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VS-MBR2035CT-M3
Vishay General Semiconductor - Diodes DivisionIn Stock: 1126VS-MBR2035CT-M3 Datasheet
VS-MBR2035CT-M3
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MBR2035CT C0G
Taiwan Semiconductor CorporationIn Stock: 1106MBR2035CT C0G Datasheet
MBR2035CT C0G
Parametric Equivalent
MBR2035CTHC0G
Taiwan Semiconductor CorporationIn Stock: 876MBR2035CTHC0G Datasheet
MBR2035CTHC0G
Parametric Equivalent
MBR2035PT C0G
Taiwan Semiconductor CorporationIn Stock: 1008MBR2035PT C0G Datasheet
MBR2035PT C0G
Parametric Equivalent

Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 35 V
Current - Average Rectified (Io) (per Diode) 20 A
Voltage - Forward (Vf) (Max) @ If 840 mV @ 20 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 35 V
Operating Temperature - Junction -65°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the MBR2035CT is determined by the following critical parameters:

Electrical Parameters:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 35 V
  • Current - Average Rectified (Io) (per Diode): Must equal or exceed 20 A
  • Voltage - Forward (Vf) (Max) @ If: Must not exceed 840 mV at rated current
  • Current - Reverse Leakage @ Vr: Must not exceed 100 µA at 35 V
  • Diode Configuration: Must be 1 Pair Common Cathode
  • Technology: Must be Schottky
  • Speed: Must be Fast Recovery ≤ 500ns, > 200mA (Io)

Mechanical Parameters:

  • Mounting Type: Must be Through Hole
  • Package / Case: Must be TO-220-3 or compatible footprint (TO-220-3, TO-220AB, TO-247-3)

Compliance Parameters:

  • RoHS Status: Must be ROHS3 Compliant

Substitute parts are grouped into three categories:

  1. Direct Parametric Equivalents: Parts with identical electrical specifications (35 V, 20 A) and compatible packaging
  2. Similar Substitutes: Parts with reduced current rating (10 A or 15 A) or increased voltage rating (45 V) that operate within the MBR2035CT application envelope
  3. Package Variants: Parts with identical electrical specifications but alternative through-hole package configurations

Parameter Comparison

Part Number Manufacturer Vr (Max) Io (per Diode) Vf (Max) @ If Reverse Leakage @ Vr Package / Case Product Status Automotive Grade
MBR2035CT onsemi 35 V 20 A 840 mV @ 20 A 100 µA @ 35 V TO-220-3 Not For New Designs
MBR2035CT C0G Taiwan Semiconductor Corporation 35 V 20 A 840 mV @ 20 A 100 µA @ 35 V TO-220-3 Active
MBR2035CTHC0G Taiwan Semiconductor Corporation 35 V 20 A 840 mV @ 20 A 100 µA @ 35 V TO-220-3 Active AEC-Q101
MBR2035PT C0G Taiwan Semiconductor Corporation 35 V 20 A 840 mV @ 20 A 100 µA @ 35 V TO-247-3 Active
MBR1535CTHC0G Taiwan Semiconductor Corporation 35 V 15 A 840 mV @ 15 A 500 µA @ 35 V TO-220-3 Active AEC-Q101
STPS2045CT STMicroelectronics 45 V 10 A 570 mV @ 10 A 100 µA @ 45 V TO-220-3 Active
VS-MBR2035CT-M3 Vishay General Semiconductor - Diodes Division 35 V 10 A 840 mV @ 20 A 100 µA @ 35 V TO-220-3 Active

Engineering Selection Recommendations

Direct Parametric Equivalents (Recommended for Direct Replacement):

The following parts provide identical electrical specifications to the MBR2035CT and are suitable for direct replacement in applications requiring 35 V, 20 A Schottky diode arrays:

  • MBR2035CT C0G (Taiwan Semiconductor Corporation): Active product status with identical electrical parameters and TO-220-3 packaging. ROHS3 compliant.
  • MBR2035CTHC0G (Taiwan Semiconductor Corporation): Active product status with identical electrical parameters, TO-220-3 packaging, and AEC-Q101 automotive qualification. ROHS3 compliant. Suitable for automotive applications.
  • MBR2035PT C0G (Taiwan Semiconductor Corporation): Active product status with identical electrical parameters in TO-247-3 package. ROHS3 compliant. Provides alternative through-hole footprint for applications with different thermal or mechanical constraints.

Reduced Current Substitutes (Application-Dependent):

  • MBR1535CTHC0G (Taiwan Semiconductor Corporation): Provides 15 A per diode at 35 V with AEC-Q101 automotive qualification. Suitable for applications where current requirement does not exceed 15 A. Reverse leakage is 500 µA at 35 V, which is higher than the MBR2035CT specification.

Increased Voltage Substitutes (Application-Dependent):

  • STPS2045CT (STMicroelectronics): Provides 45 V reverse voltage rating with 10 A per diode. Forward voltage is 570 mV at 10 A, which is lower than the MBR2035CT. Suitable for applications where voltage margin is required but current does not exceed 10 A.

Reduced Current Substitutes (Lower Priority):

  • VS-MBR2035CT-M3 (Vishay General Semiconductor - Diodes Division): Provides 10 A per diode at 35 V. Suitable only for applications where current requirement does not exceed 10 A.

Frequently Asked Questions (FAQ)

Q: Can MBR2035CT C0G be used as a direct replacement for MBR2035CT?

A: Yes. MBR2035CT C0G is a parametric equivalent manufactured by Taiwan Semiconductor Corporation with identical electrical specifications (35 V, 20 A, 840 mV forward voltage) and TO-220-3 packaging. The part is in active product status, addressing the obsolescence of the original onsemi MBR2035CT.

Q: What is the difference between MBR2035CTHC0G and MBR2035CT C0G?

A: Both parts are parametric equivalents with identical electrical specifications. MBR2035CTHC0G includes AEC-Q101 automotive qualification and is designated for automotive applications. MBR2035CT C0G is the standard industrial grade variant. Selection depends on application requirements.

Q: Can MBR1535CTHC0G replace MBR2035CT in all applications?

A: No. MBR1535CTHC0G is rated for 15 A per diode, which is 5 A lower than the MBR2035CT specification of 20 A. This part is suitable only for applications where the maximum current requirement does not exceed 15 A. Additionally, reverse leakage current is 500 µA at 35 V, compared to 100 µA for the MBR2035CT.

Q: What is the advantage of MBR2035PT C0G over MBR2035CT C0G?

A: MBR2035PT C0G provides identical electrical specifications but uses TO-247-3 packaging instead of TO-220-3. The TO-247-3 package offers improved thermal performance and different mechanical mounting characteristics. Selection depends on PCB layout and thermal management requirements.

Q: Is STPS2045CT a suitable replacement for MBR2035CT?

A: STPS2045CT is not a direct replacement. While it maintains the same diode configuration and fast recovery characteristics, it is rated for 45 V reverse voltage and only 10 A per diode. This part is suitable only for applications where the current requirement does not exceed 10 A. The higher voltage rating provides additional margin but does not compensate for the reduced current capacity.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant, matching the compliance status of the original MBR2035CT.

Q: What is the operating temperature range difference between MBR2035CT and its substitutes?

A: The original MBR2035CT operates from -65°C to 150°C. Most Taiwan Semiconductor Corporation variants (MBR2035CT C0G, MBR2035CTHC0G, MBR2035PT C0G, MBR1535CTHC0G) operate from -55°C to 150°C, providing a 10°C reduction in minimum operating temperature. STPS2045CT specifies a maximum junction temperature of 175°C. Application requirements determine whether this difference is significant.

Q: Can multiple lower-current parts be paralleled to replace MBR2035CT?

A: Paralleling is not addressed in the provided specifications and is outside the scope of this equivalency reference. Consult manufacturer datasheets and application notes for guidance on parallel operation.

Q: What packaging options are available for 35 V, 20 A Schottky diode arrays?

A: The MBR2035CT specifications are available in two through-hole packages: TO-220-3 (MBR2035CT C0G, MBR2035CTHC0G) and TO-247-3 (MBR2035PT C0G). Both packages are suitable for through-hole PCB assembly with different thermal and mechanical characteristics.

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