MBR20100CTH Equivalent & Substitute Parts

Part Overview

The MBR20100CTH is a Schottky diode array with 1 pair common cathode configuration, rated for 100 V DC reverse voltage and 20 A average rectified current per diode. Manufactured by Taiwan Semiconductor Corporation, this component is packaged in TO-220-3 through-hole format and meets automotive-grade AEC-Q101 qualification standards. The part is currently discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing design requirements and procurement needs.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	100 V
Current - Average Rectified (Io) (per Diode)	20 A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 20 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	100 µA @ 100 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Through Hole
Package / Case	TO-220-3
Grade	Automotive
Qualification	AEC-Q101
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the MBR20100CTH is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V minimum
Current - Average Rectified (Io) (per Diode): 20 A minimum
Mounting Type: Through Hole
Package / Case: TO-220-3 or compatible package variant

Secondary Compatibility Factors:

Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A or lower
Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C minimum range
RoHS Status: ROHS3 Compliant

Parts are classified into two categories:

Parametric Equivalents: Components that meet or exceed all primary substitution criteria with identical or superior electrical performance characteristics.

Similar Parts: Components that share the same diode configuration, technology, voltage rating, and package type but with reduced current ratings (10 A or 5 A) or modified thermal specifications. These parts are suitable for applications with lower current requirements or where thermal performance is not a limiting factor.

Parameter Comparison

Part Number	Manufacturer	Diode Config	Vr (Max)	Io (per Diode)	Vf (Max) @ If	Speed	Ir @ Vr	Tj (Operating)	Package	Status
MBR20100CTH	Taiwan Semiconductor Corporation	1 Pair Common Cathode	100 V	20 A	950 mV @ 20 A	Fast Recovery ≤ 500ns, > 200mA	100 µA @ 100 V	-55°C ~ 150°C	TO-220-3	Discontinued
MBR20100CT	Good-Ark Semiconductor	1 Pair Common Cathode	100 V	10 A	Not specified	Small Signal ≤ 200mA, Any Speed	200 nA @ 100 V	Not specified	TO-220-3 Full Pack, Isolated Tab	Active
MBR20100PTHC0G	Taiwan Semiconductor Corporation	1 Pair Common Cathode	100 V	20 A	950 mV @ 20 A	Fast Recovery ≤ 500ns, > 200mA	100 µA @ 100 V	-55°C ~ 150°C	TO-247-3	Active
MBR20H100CT	Taiwan Semiconductor Corporation	1 Pair Common Cathode	100 V	20 A	950 mV @ 20 A	Fast Recovery ≤ 500ns, > 200mA	5 µA @ 100 V	-55°C ~ 175°C	TO-220-3	Active
MBR10100CT-BP	Micro Commercial Co	1 Pair Common Cathode	100 V	10 A	850 mV @ 5 A	Fast Recovery ≤ 500ns, > 200mA	200 µA @ 100 V	-55°C ~ 150°C	TO-220-3	Active
MBR10100CT-E3/4W	Vishay General Semiconductor - Diodes Division	1 Pair Common Cathode	100 V	5 A	850 mV @ 5 A	Fast Recovery ≤ 500ns, > 200mA	100 µA @ 100 V	-65°C ~ 150°C	TO-220-3	Active
MBR10H100CT-E3/45	Vishay General Semiconductor - Diodes Division	1 Pair Common Cathode	100 V	5 A	760 mV @ 5 A	Fast Recovery ≤ 500ns, > 200mA	3.5 µA @ 100 V	-65°C ~ 175°C	TO-220-3	Active
MBR20100CT-BP	Micro Commercial Co	1 Pair Common Cathode	100 V	10 A	950 mV @ 20 A	Fast Recovery ≤ 500ns, > 200mA	150 µA @ 100 V	-55°C ~ 150°C	TO-220-3	Active
MBR20100CT-E3/4W	Vishay General Semiconductor - Diodes Division	1 Pair Common Cathode	100 V	10 A	800 mV @ 10 A	Fast Recovery ≤ 500ns, > 200mA	100 µA @ 100 V	-65°C ~ 150°C	TO-220-3	Active
MBR20100CT-M3/4W	Vishay General Semiconductor - Diodes Division	1 Pair Common Cathode	100 V	10 A	800 mV @ 10 A	Fast Recovery ≤ 500ns, > 200mA	100 µA @ 100 V	-65°C ~ 150°C	TO-220-3	Active
MBR20H100CT-E3/45	Vishay General Semiconductor - Diodes Division	1 Pair Common Cathode	100 V	10 A	770 mV @ 10 A	Fast Recovery ≤ 500ns, > 200mA	4.5 µA @ 100 V	-65°C ~ 150°C	TO-220-3	Active

Engineering Selection Recommendations

Direct Parametric Equivalent (Recommended Primary Substitute):

MBR20H100CT (Taiwan Semiconductor Corporation) is the recommended primary substitute for the discontinued MBR20100CTH. This component maintains identical electrical specifications including 100 V reverse voltage, 20 A average rectified current, 950 mV forward voltage at 20 A, and fast recovery speed characteristics. The MBR20H100CT is packaged in TO-220-3 through-hole format and is currently in active production status. The component exhibits superior reverse leakage characteristics (5 µA @ 100 V versus 100 µA @ 100 V) and extended operating temperature range (-55°C ~ 175°C versus -55°C ~ 150°C). Both components are ROHS3 compliant with identical HTSUS and ECCN classifications.

Alternative Package Configuration:

MBR20100PTHC0G (Taiwan Semiconductor Corporation) provides identical electrical performance to the MBR20100CTH with the same 20 A current rating and 100 V voltage specification. This component is packaged in TO-247-3 format instead of TO-220-3. Selection of this alternative is appropriate when PCB layout accommodates the larger TO-247-3 package footprint or when thermal management requirements favor the increased tab surface area of the TO-247 package.

Reduced Current Rating Alternatives:

Components rated for 10 A average rectified current (MBR20100CT-BP, MBR20100CT-E3/4W, MBR20100CT-M3/4W, MBR20H100CT-E3/45) are suitable for applications where circuit requirements do not exceed 10 A per diode. These parts maintain the 100 V voltage rating, fast recovery speed, and TO-220-3 package configuration. Selection from this group is appropriate when design margins permit reduced current capacity or when cost optimization is a secondary objective.

Lower Current Rating Alternatives:

Components rated for 5 A average rectified current (MBR10100CT-E3/4W, MBR10H100CT-E3/45) are suitable only for applications with maximum current requirements not exceeding 5 A per diode. These parts maintain 100 V voltage rating and fast recovery characteristics but are not suitable for applications requiring the full 20 A capacity of the original MBR20100CTH.

All recommended substitutes maintain ROHS3 compliance and are currently in active production status, ensuring long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can MBR20H100CT directly replace MBR20100CTH in all applications?

A: Yes. MBR20H100CT meets or exceeds all electrical and mechanical specifications of the MBR20100CTH. Both components feature identical 100 V reverse voltage rating, 20 A average rectified current capacity, 950 mV forward voltage at 20 A, and fast recovery speed characteristics. Both are packaged in TO-220-3 through-hole format with identical pin configuration. MBR20H100CT is currently in active production, whereas MBR20100CTH is discontinued.

Q: What is the difference between TO-220-3 and TO-247-3 packages?

A: Both packages are through-hole mounted with three leads and identical electrical pin configuration. The TO-247-3 package features a larger tab surface area compared to TO-220-3, providing increased thermal dissipation capability. TO-247-3 components require larger PCB footprints and mounting hardware. Selection between these packages depends on available PCB space and thermal management requirements.

Q: Can I use a 10 A rated component in place of the 20 A MBR20100CTH?

A: A 10 A rated component is suitable only if circuit design ensures that average rectified current per diode does not exceed 10 A under any operating condition, including transient events and worst-case scenarios. The MBR20100CTH is rated for 20 A, providing design margin for higher current applications. Use of a 10 A component in a 20 A application will result in component overstress and potential failure.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant, matching the compliance status of the original MBR20100CTH. All components are also REACH unaffected with identical HTSUS and ECCN classifications.

Q: What is the significance of reverse leakage current differences between substitute parts?

A: Reverse leakage current (Ir) represents the small current flowing through the diode when reverse biased. Lower reverse leakage indicates superior diode quality and reduced power dissipation in reverse bias conditions. MBR20H100CT exhibits 5 µA @ 100 V compared to 100 µA @ 100 V for MBR20100CTH, representing a 20-fold improvement. This enhanced performance does not affect forward conduction characteristics but reduces standby power consumption in applications with extended reverse bias periods.

Q: What operating temperature range should I consider for thermal design?

A: The MBR20100CTH operates from -55°C to 150°C junction temperature. MBR20H100CT extends this range to -55°C to 175°C, providing additional thermal margin. When selecting substitutes, verify that the specified operating temperature range accommodates the maximum junction temperature expected in the application, accounting for ambient temperature, component power dissipation, and thermal resistance of the PCB assembly.

Q: Can I use MBR20100CT from Good-Ark Semiconductor as a direct substitute?

A: MBR20100CT from Good-Ark Semiconductor is not a direct substitute. While it maintains the 100 V voltage rating and TO-220-3 package configuration, it is rated for only 10 A average rectified current compared to the 20 A rating of MBR20100CTH. Additionally, this component is specified for small signal operation (≤ 200mA) rather than fast recovery operation. Use this component only in applications with maximum current requirements not exceeding 10 A.

Q: What is the difference between "Fast Recovery" and "Small Signal" speed classifications?

A: Fast Recovery (≤ 500ns, > 200mA) indicates the diode is optimized for high-current switching applications with rapid reverse recovery time. Small Signal (≤ 200mA, Any Speed) indicates the diode is designed for low-current signal applications without specific recovery time optimization. The MBR20100CTH is specified as fast recovery, suitable for high-current rectification and switching applications. Substitutes must maintain fast recovery classification to preserve circuit performance characteristics.

Q: Are there any automotive-grade alternatives to MBR20100CTH?

A: The MBR20100CTH carries automotive-grade classification with AEC-Q101 qualification. MBR20H100CT also meets automotive-grade standards. Other substitute parts listed do not explicitly specify automotive-grade qualification in the provided data. If automotive-grade qualification is a design requirement, MBR20H100CT is the appropriate selection.

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