MBR1550CT Equivalent & Substitute Parts

Part Overview

The MBR1550CT is a Schottky diode array manufactured by onsemi, configured as 1 pair common cathode with 50 V reverse voltage rating and 15 A average rectified current per diode. The device is packaged in TO-220-3 through-hole configuration and operates across a junction temperature range of -65°C to 150°C. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The MBR1550CT serves applications requiring fast recovery Schottky rectification with moderate voltage and current specifications. Substitute parts must maintain compatibility with the TO-220-3 footprint and preserve the 1 pair common cathode diode configuration while meeting or exceeding the electrical performance requirements of the original design.

Substiute Parts

MBR1550CT
onsemiIn Stock: 10881MBR1550CT Datasheet
MBR1550CT
Current Part
DSA20C45PB
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DSA30C45PB
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DSA60C45PB
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DSA60C45PB
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DSB60C45PB
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DSB60C45PB
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DSSK20-0045A
IXYSIn Stock: 1072DSSK20-0045A Datasheet
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DSSK28-0045A
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DST2045C
Littelfuse Inc.In Stock: 1025DST2045C Datasheet
DST2045C
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MBR1560CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1903MBR1560CT-E3/45 Datasheet
MBR1560CT-E3/45
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MBR1550CT C0G
Taiwan Semiconductor CorporationIn Stock: 840MBR1550CT C0G Datasheet
MBR1550CT C0G
Parametric Equivalent
MBR1550CTHC0G
Taiwan Semiconductor CorporationIn Stock: 1140MBR1550CTHC0G Datasheet
MBR1550CTHC0G
Parametric Equivalent

Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) (per Diode) 15 A
Voltage - Forward (Vf) (Max) @ If 750 mV @ 7.5 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 1 mA @ 50 V
Operating Temperature - Junction -65 to 150 °C
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the MBR1550CT is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Diode configuration must remain 1 pair common cathode
  • Technology must be Schottky
  • Package must be TO-220-3 through-hole
  • Voltage - DC Reverse (Vr) must be ≥ 50 V
  • Current - Average Rectified (Io) per diode must be ≥ 15 A
  • Speed must be fast recovery ≤ 500ns, > 200mA (Io)

Substitute Parts Categorized by Electrical Performance:

Category A: Direct Electrical Match (50 V, 15 A)

  • MBR1550CT C0G (Taiwan Semiconductor Corporation)
  • MBR1550CTHC0G (Taiwan Semiconductor Corporation)

Category B: Lower Voltage Rating (45 V, 15 A)

  • DSA30C45PB (IXYS)
  • DSSK28-0045A (IXYS)

Category C: Lower Current Rating (45 V, 10 A)

  • DSA20C45PB (IXYS)
  • DSSK20-0045A (IXYS)
  • DST2045C (Littelfuse Inc.)

Category D: Higher Current Rating (45 V, 30 A)

  • DSA60C45PB (IXYS)
  • DSB60C45PB (IXYS)

Category E: Higher Voltage Rating (60 V, 7.5 A)

  • MBR1560CT-E3/45 (Vishay General Semiconductor - Diodes Division)

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io (per Diode) [A] Vf (Max) [mV] Ir @ Vr [µA/mA] Tj Range [°C] Product Status RoHS
MBR1550CT onsemi 50 15 750 @ 7.5A 1 mA @ 50V -65 to 150 Obsolete
MBR1550CT C0G Taiwan Semiconductor 50 15 750 @ 7.5A 300 µA @ 50V -55 to 150 Active ROHS3
MBR1550CTHC0G Taiwan Semiconductor 50 15 750 @ 7.5A 300 µA @ 50V -55 to 150 Active ROHS3
DSA30C45PB IXYS 45 15 750 @ 15A 300 µA @ 45V -55 to 175 Active ROHS3
DSSK28-0045A IXYS 45 15 670 @ 15A 500 µA @ 45V -55 to 175 Active ROHS3
DSA20C45PB IXYS 45 10 750 @ 10A 200 µA @ 45V -55 to 175 Active ROHS3
DSSK20-0045A IXYS 45 10 680 @ 10A 300 µA @ 45V -55 to 175 Active ROHS3
DST2045C Littelfuse Inc. 45 10 580 @ 10A 2 mA @ 45V -55 to 150 Active ROHS3
DSA60C45PB IXYS 45 30 790 @ 30A 900 µA @ 45V -55 to 175 Active ROHS3
DSB60C45PB IXYS 45 30 630 @ 30A 10 mA @ 45V -55 to 150 Active ROHS3
MBR1560CT-E3/45 Vishay General Semiconductor 60 7.5 750 @ 7.5A 1 mA @ 60V -65 to 175 Active ROHS3

Engineering Selection Recommendations

For Direct Replacement (Preferred):

Select MBR1550CT C0G or MBR1550CTHC0G from Taiwan Semiconductor Corporation when the original MBR1550CT cannot be sourced. Both parts maintain identical electrical specifications (50 V, 15 A) and TO-220-3 packaging. Both are active products with ROHS3 compliance. The MBR1550CTHC0G variant includes AEC-Q101 automotive qualification and is suitable for automotive applications requiring this certification.

For Voltage-Constrained Applications (45 V Maximum System Voltage):

DSA30C45PB or DSSK28-0045A from IXYS are suitable when system voltage does not exceed 45 V and 15 A current is required. Both maintain the 1 pair common cathode configuration and TO-220-3 package. DSA30C45PB offers extended junction temperature range (-55°C to 175°C) compared to the original part. DSSK28-0045A provides lower forward voltage (670 mV @ 15 A) than the original specification.

For Current-Reduced Applications (10 A Maximum Per Diode):

DSA20C45PB, DSSK20-0045A, or DST2045C are applicable when circuit design permits 10 A per diode operation at 45 V. DST2045C from Littelfuse offers the lowest forward voltage (580 mV @ 10 A) among 10 A options. All three maintain TO-220-3 through-hole mounting and fast recovery Schottky technology.

For Higher Current Applications (30 A Per Diode):

DSA60C45PB or DSB60C45PB from IXYS support 30 A per diode at 45 V reverse voltage. DSB60C45PB provides superior forward voltage performance (630 mV @ 30 A) compared to DSA60C45PB (790 mV @ 30 A). Both maintain TO-220-3 packaging and fast recovery characteristics.

For Higher Voltage Applications (60 V System Voltage):

MBR1560CT-E3/45 from Vishay General Semiconductor provides 60 V reverse voltage rating with 7.5 A per diode. This part maintains identical forward voltage specification (750 mV @ 7.5 A) and extends the upper junction temperature limit to 175°C. ROHS3 compliance is confirmed.

Product Status Consideration:

All recommended substitute parts are classified as active products with current manufacturing status, ensuring long-term availability and supply chain stability compared to the obsolete MBR1550CT.

Frequently Asked Questions (FAQ)

Q1: Can I use a 45 V rated diode in a 50 V application?

No. The MBR1550CT is rated for 50 V maximum reverse voltage. Substitute parts must maintain a reverse voltage rating of at least 50 V to ensure safe operation. Parts rated at 45 V (DSA30C45PB, DSSK28-0045A, DSA20C45PB, DSSK20-0045A, DST2045C, DSA60C45PB, DSB60C45PB) are suitable only for applications with maximum system voltage of 45 V.

Q2: What is the significance of the "1 Pair Common Cathode" configuration?

This configuration specifies the internal diode arrangement within the TO-220-3 package. All substitute parts listed maintain this identical configuration, ensuring pin-to-pin compatibility and functional equivalence. Changing this configuration would require circuit redesign.

Q3: Are all substitute parts RoHS compliant?

All active substitute parts listed are ROHS3 compliant. The original MBR1550CT does not specify RoHS status. ROHS3 compliance is standard for all active production parts in this category.

Q4: Can I substitute a 15 A part with a 10 A part?

Substitution of a 15 A rated part with a 10 A rated part is not recommended for applications requiring the full 15 A current capacity. However, if circuit design permits operation at 10 A or below, parts such as DSA20C45PB, DSSK20-0045A, or DST2045C may be used in 45 V applications.

Q5: What is the difference between DSA30C45PB and DSSK28-0045A?

Both parts are 45 V, 15 A Schottky diode arrays in TO-220-3 packages from IXYS. DSA30C45PB specifies 750 mV forward voltage at 15 A, while DSSK28-0045A specifies 670 mV at 15 A, offering lower forward voltage drop. Both support -55°C to 175°C junction temperature range.

Q6: Why does MBR1560CT-E3/45 have lower current (7.5 A) than the original?

MBR1560CT-E3/45 is rated for 60 V reverse voltage, which is 10 V higher than the MBR1550CT. The reduced current rating (7.5 A versus 15 A) reflects the thermal and electrical trade-offs inherent in higher voltage Schottky diode design. This part is suitable only for applications requiring 60 V voltage rating with 7.5 A or lower current per diode.

Q7: What is the difference between MBR1550CT C0G and MBR1550CTHC0G?

Both parts from Taiwan Semiconductor Corporation maintain identical electrical specifications (50 V, 15 A). The MBR1550CTHC0G variant includes AEC-Q101 automotive qualification, making it suitable for automotive applications requiring this certification. The standard MBR1550CT C0G is suitable for general industrial applications.

Q8: Are the TO-220-3 packages of all substitute parts mechanically identical?

All substitute parts listed use TO-220-3 through-hole packaging. While the package designation is identical, minor variations in lead geometry or thermal characteristics may exist between manufacturers. Physical verification is recommended before high-volume production transitions.

Q9: How do I select between DSA60C45PB and DSB60C45PB for 30 A applications?

Both parts support 30 A per diode at 45 V. DSB60C45PB offers superior forward voltage performance (630 mV @ 30 A) compared to DSA60C45PB (790 mV @ 30 A), resulting in lower power dissipation. DSB60C45PB is preferred for thermal-constrained applications. Both maintain -55°C to 150°C junction temperature range.

Q10: Can I use substitute parts with different reverse leakage specifications?

Reverse leakage current varies among substitute parts (ranging from 200 µA to 10 mA at rated voltage). For most applications, this variation is acceptable. Applications with stringent leakage requirements should verify that the selected substitute part's leakage specification meets circuit design constraints before implementation.

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