MBR15150CTHC0G Equivalent & Substitute Parts

Part Overview

The MBR15150CTHC0G is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode arrangement. This component is rated for 150 V DC reverse voltage with 15 A average rectified current per diode and operates across a junction temperature range of -55°C to 150°C. The device is housed in a TO-220-3 through-hole package and carries automotive-grade qualification under AEC-Q101 standards.

This part is currently in active production status with 1006 units in stock. Equivalent and substitute parts are identified for applications requiring alternative current ratings, thermal performance characteristics, or inventory availability while maintaining compatibility with the primary electrical and mechanical specifications.

Substiute Parts

MBR15150CTHC0G
Taiwan Semiconductor CorporationIn Stock: 1022MBR15150CTHC0G Datasheet
MBR15150CTHC0G
Current Part
MBR10150CT-G1
Diodes IncorporatedIn Stock: 19422MBR10150CT-G1 Datasheet
MBR10150CT-G1
Similar
V20150C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 9882V20150C-E3/4W Datasheet
V20150C-E3/4W
Similar

Key Parameters

Parameter Value
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 150 V
Current - Average Rectified (Io) (per Diode) 15 A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 7.5 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 150 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3
Grade Automotive
Qualification AEC-Q101
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the MBR15150CTHC0G are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates maintain the following mandatory parameters:

  • Diode Configuration: 1 Pair Common Cathode
  • Technology: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitution is permitted when the average rectified current rating meets or exceeds the application requirement. Forward voltage characteristics and reverse leakage current are secondary selection criteria that must be evaluated against specific circuit performance requirements. Operating temperature range and manufacturer qualification status are additional factors for applications with defined environmental or reliability constraints.

Parameter Comparison

Parameter MBR15150CTHC0G (Main) MBR10150CT-G1 V20150C-E3/4W
Manufacturer Taiwan Semiconductor Corporation Diodes Incorporated Vishay General Semiconductor - Diodes Division
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Technology Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 150 V 150 V 150 V
Current - Average Rectified (Io) (per Diode) 15 A 5 A 10 A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 7.5 A 890 mV @ 5 A 1.2 V @ 10 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 150 V 50 µA @ 150 V 150 µA @ 150 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active

Engineering Selection Recommendations

MBR10150CT-G1 (Diodes Incorporated)

The MBR10150CT-G1 is suitable for applications where the circuit current requirement does not exceed 5 A per diode. This substitute offers lower forward voltage (890 mV @ 5 A) and reduced reverse leakage current (50 µA @ 150 V) compared to the main part. The extended operating temperature range (-55°C to 175°C) provides additional thermal margin for high-temperature environments. This part is active in production with 19400 units in stock. Selection of this substitute requires confirmation that the 5 A current rating satisfies circuit design specifications.

V20150C-E3/4W (Vishay General Semiconductor - Diodes Division)

The V20150C-E3/4W is applicable for circuits requiring 10 A per diode current capacity. This substitute maintains the same maximum operating junction temperature as the main part (150°C) and operates within the same thermal envelope. The forward voltage specification (1.2 V @ 10 A) is higher than the main part, resulting in increased power dissipation. Reverse leakage current is elevated at 150 µA @ 150 V. This part is active in production with 9793 units in stock. The TMBS® series designation indicates manufacturer-specific performance optimization. Selection of this substitute requires verification that the higher forward voltage and leakage current characteristics are acceptable for the target application.

Frequently Asked Questions (FAQ)

Q: Can the MBR10150CT-G1 replace the MBR15150CTHC0G in all applications?

A: The MBR10150CT-G1 is a direct mechanical and electrical substitute only for applications where the circuit current requirement does not exceed 5 A per diode. The lower current rating limits its use to lower-power designs. Forward voltage and reverse leakage characteristics differ and must be evaluated against circuit performance requirements.

Q: What is the primary difference between the V20150C-E3/4W and the MBR15150CTHC0G?

A: The V20150C-E3/4W is rated for 10 A average rectified current per diode, compared to 15 A for the main part. Forward voltage is higher (1.2 V @ 10 A versus 1.05 V @ 7.5 A), and reverse leakage current is elevated (150 µA @ 150 V versus 100 µA @ 150 V). Both parts share identical reverse voltage rating, package type, and operating temperature range.

Q: Are all substitute parts automotive-grade qualified?

A: The MBR15150CTHC0G carries AEC-Q101 automotive qualification. The substitute parts MBR10150CT-G1 and V20150C-E3/4W are active production components with ROHS3 compliance and MSL-1 moisture sensitivity rating. Automotive qualification status for substitute parts is not specified in the provided data.

Q: Can I use a substitute part with lower current rating in a high-current application?

A: No. The average rectified current rating must meet or exceed the application requirement. Using a part with insufficient current capacity results in thermal stress, reduced component life, and potential circuit failure.

Q: Do all substitute parts use the same TO-220-3 package?

A: Yes. All parts listed—MBR15150CTHC0G, MBR10150CT-G1, and V20150C-E3/4W—use the TO-220-3 through-hole package. Mechanical mounting and thermal interface characteristics are identical across all three components.

Q: What is the significance of the TMBS® designation on the V20150C-E3/4W?

A: TMBS® is a Vishay manufacturer series designation. This designation indicates the part belongs to a specific product line with defined performance characteristics. The electrical parameters provided in the specification table define the component's functional performance independent of series designation.

Q: How do forward voltage differences affect circuit performance?

A: Forward voltage directly impacts power dissipation and voltage drop across the diode. The MBR10150CT-G1 exhibits lower forward voltage (890 mV @ 5 A), while the V20150C-E3/4W exhibits higher forward voltage (1.2 V @ 10 A) compared to the main part (1.05 V @ 7.5 A). Circuit designs sensitive to voltage drop or thermal dissipation must account for these differences.

Q: Are there inventory considerations when selecting a substitute?

A: Current inventory levels are provided for reference: MBR15150CTHC0G (1006 units), MBR10150CT-G1 (19400 units), and V20150C-E3/4W (9793 units). Inventory availability may influence procurement decisions for high-volume production or time-sensitive applications.

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