MBR15100CT Equivalent & Substitute Parts

Part Overview

The MBR15100CT is a Schottky diode array manufactured by Taiwan Semiconductor Corporation, configured as a 1 Pair Common Cathode device rated for 100 V DC reverse voltage and 15 A average rectified current per diode. The component is housed in a TO-220-3 through-hole package and is classified as Active product status with ROHS3 compliance and unlimited moisture sensitivity level.

Equivalent and substitute parts are identified based on matching or exceeding the electrical and mechanical specifications of the MBR15100CT. Substitution becomes necessary when the primary part is unavailable, when alternative manufacturers' inventory levels are higher, or when design requirements permit operation within the specified parameter ranges of alternative devices.

Substiute Parts

MBR15100CT
Taiwan Semiconductor CorporationIn Stock: 34837MBR15100CT Datasheet
MBR15100CT
Current Part
MBR30100CT-G1
Diodes IncorporatedIn Stock: 1064MBR30100CT-G1 Datasheet
MBR30100CT-G1
Direct
MBR10100CT-BP
Micro Commercial CoIn Stock: 5907MBR10100CT-BP Datasheet
MBR10100CT-BP
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MBR10100CT-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 3178MBR10100CT-E3/4W Datasheet
MBR10100CT-E3/4W
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MBR10100CT-G1
Diodes IncorporatedIn Stock: 1219MBR10100CT-G1 Datasheet
MBR10100CT-G1
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MBR10H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 3669MBR10H100CT-E3/45 Datasheet
MBR10H100CT-E3/45
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MBR20100CT-BP
Micro Commercial CoIn Stock: 5084MBR20100CT-BP Datasheet
MBR20100CT-BP
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MBR20100CT-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 8817MBR20100CT-E3/4W Datasheet
MBR20100CT-E3/4W
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MBR20100CT-G1
Diodes IncorporatedIn Stock: 1781MBR20100CT-G1 Datasheet
MBR20100CT-G1
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MBR20100CT-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 2244MBR20100CT-M3/4W Datasheet
MBR20100CT-M3/4W
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MBR20H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1625MBR20H100CT-E3/45 Datasheet
MBR20H100CT-E3/45
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MBR20H100CTG-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1260MBR20H100CTG-E3/45 Datasheet
MBR20H100CTG-E3/45
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MBRB41H100CT-1G
Fairchild SemiconductorIn Stock: 2857MBRB41H100CT-1G Datasheet
MBRB41H100CT-1G
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NTSV20100CTG
onsemiIn Stock: 1487NTSV20100CTG Datasheet
NTSV20100CTG
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NTSV30H100CTG
onsemiIn Stock: 2272NTSV30H100CTG Datasheet
NTSV30H100CTG
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SDT20100CT
Diodes IncorporatedIn Stock: 1338SDT20100CT Datasheet
SDT20100CT
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STPS60H100CT
STMicroelectronicsIn Stock: 90375STPS60H100CT Datasheet
STPS60H100CT
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V20100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 8760V20100C-E3/4W Datasheet
V20100C-E3/4W
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V20100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 20261V20100C-M3/4W Datasheet
V20100C-M3/4W
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V30100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 6167V30100C-E3/4W Datasheet
V30100C-E3/4W
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V30100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 4971V30100C-M3/4W Datasheet
V30100C-M3/4W
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V40100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 90547V40100C-E3/4W Datasheet
V40100C-E3/4W
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V60100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 44133V60100C-E3/4W Datasheet
V60100C-E3/4W
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V60100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 10296V60100C-M3/4W Datasheet
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Key Parameters

Parameter Value
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 15 A
Voltage - Forward (Vf) (Max) @ If 920 mV @ 7.5 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 100 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MBR15100CT is determined by the following critical parameters:

Mandatory Matching Parameters:

  • Diode Configuration: 1 Pair Common Cathode
  • Technology: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)

Current Rating Consideration: The MBR15100CT is rated for 15 A average rectified current per diode. Substitute parts are grouped into three categories based on current rating:

  1. Direct Equivalent (15 A rating): MBR30100CT-G1 matches the 15 A current specification exactly.

  2. Reduced Current Rating (10 A rating): MBR10100CT-BP, MBR20100CT-BP, MBR20100CT-E3/4W, MBR20100CT-G1, and MBR20100CT-M3/4W are rated for 10 A average rectified current. These parts are suitable for applications where the circuit current demand does not exceed 10 A per diode.

  3. Reduced Current Rating (5 A rating): MBR10100CT-E3/4W, MBR10100CT-G1, and MBR10H100CT-E3/45 are rated for 5 A average rectified current. These parts are suitable for applications where the circuit current demand does not exceed 5 A per diode.

All substitute parts maintain the 100 V reverse voltage rating, TO-220-3 package, Schottky technology, and fast recovery speed characteristics of the main part.

Parameter Comparison

Part Number Manufacturer Io (A) Vf (Max) @ If Vr (Max) Ir @ Vr Tj (°C) Package Grade
MBR15100CT Taiwan Semiconductor Corporation 15 920 mV @ 7.5 A 100 V 100 µA @ 100 V -55 ~ 150 TO-220-3 Standard
MBR30100CT-G1 Diodes Incorporated 15 850 mV @ 15 A 100 V 100 µA @ 100 V -55 ~ 150 TO-220-3 Standard
MBR10100CT-BP Micro Commercial Co 10 850 mV @ 5 A 100 V 200 µA @ 100 V -55 ~ 150 TO-220-3 Standard
MBR10100CT-E3/4W Vishay General Semiconductor - Diodes Division 5 850 mV @ 5 A 100 V 100 µA @ 100 V -65 ~ 150 TO-220-3 Standard
MBR10100CT-G1 Diodes Incorporated 5 840 mV @ 5 A 100 V 50 µA @ 100 V -55 ~ 150 TO-220-3 Automotive AEC-Q101
MBR10H100CT-E3/45 Vishay General Semiconductor - Diodes Division 5 760 mV @ 5 A 100 V 3.5 µA @ 100 V -65 ~ 175 TO-220-3 Standard
MBR20100CT-BP Micro Commercial Co 10 950 mV @ 20 A 100 V 150 µA @ 100 V -55 ~ 150 TO-220-3 Standard
MBR20100CT-E3/4W Vishay General Semiconductor - Diodes Division 10 800 mV @ 10 A 100 V 100 µA @ 100 V -65 ~ 150 TO-220-3 Standard
MBR20100CT-G1 Diodes Incorporated 10 840 mV @ 10 A 100 V 50 µA @ 100 V -55 ~ 175 TO-220-3 Automotive AEC-Q101
MBR20100CT-M3/4W Vishay General Semiconductor - Diodes Division 10 800 mV @ 10 A 100 V 100 µA @ 100 V -65 ~ 150 TO-220-3 Standard
MBR20H100CT-E3/45 Vishay General Semiconductor - Diodes Division 10 770 mV @ 10 A 100 V 4.5 µA @ 100 V -65 ~ 150 TO-220-3 Standard

Engineering Selection Recommendations

Direct Equivalent Selection:

MBR30100CT-G1 from Diodes Incorporated is the direct equivalent substitute for the MBR15100CT. This part maintains the 15 A average rectified current rating and all critical electrical parameters. Both parts are Active status, ROHS3 compliant, and housed in TO-220-3 packages. The MBR30100CT-G1 exhibits a lower forward voltage drop (850 mV @ 15 A versus 920 mV @ 7.5 A), which represents improved thermal efficiency in high-current applications.

Reduced Current Rating Substitutes:

For applications where circuit current demand does not exceed 10 A per diode, the following parts are suitable substitutes:

  • MBR20100CT-E3/4W and MBR20100CT-M3/4W (Vishay) offer extended operating temperature range (-65°C to 150°C) and lower forward voltage characteristics (800 mV @ 10 A).
  • MBR20100CT-G1 (Diodes Incorporated) provides automotive-grade qualification (AEC-Q101) with extended upper temperature limit (-55°C to 175°C) and reduced reverse leakage current (50 µA @ 100 V).
  • MBR20100CT-BP (Micro Commercial Co) maintains standard operating temperature range with higher inventory availability.

For applications where circuit current demand does not exceed 5 A per diode:

  • MBR10H100CT-E3/45 (Vishay) offers the lowest forward voltage drop (760 mV @ 5 A) and lowest reverse leakage current (3.5 µA @ 100 V) with extended upper temperature limit (175°C).
  • MBR10100CT-G1 (Diodes Incorporated) provides automotive-grade qualification (AEC-Q101) with reduced reverse leakage (50 µA @ 100 V).
  • MBR10100CT-E3/4W (Vishay) offers extended lower temperature limit (-65°C) with standard performance characteristics.

All substitute parts maintain ROHS3 compliance, unlimited moisture sensitivity level (MSL 1), and fast recovery speed characteristics.

Frequently Asked Questions (FAQ)

Q: Can MBR30100CT-G1 be used as a direct replacement for MBR15100CT?

A: Yes. MBR30100CT-G1 is a direct equivalent substitute. Both parts are rated for 15 A average rectified current, 100 V reverse voltage, feature Schottky technology with 1 Pair Common Cathode configuration, and are housed in TO-220-3 packages. Both are Active status and ROHS3 compliant.

Q: What is the difference between the 15 A, 10 A, and 5 A rated substitutes?

A: The current rating indicates the maximum average rectified current per diode that the part is designed to handle continuously. The MBR15100CT is rated for 15 A per diode. Substitutes rated for 10 A or 5 A have lower current-carrying capacity and are suitable only for circuits where the actual current demand does not exceed their respective ratings. Using a lower-rated part in a circuit exceeding its current specification will result in excessive heat generation and potential device failure.

Q: Are all substitute parts compatible with the TO-220-3 package footprint?

A: Yes. All substitute parts listed are housed in TO-220-3 packages and are compatible with the same through-hole PCB footprint as the MBR15100CT. Supplier device package designations (TO-220AB versus TO-220-3) refer to minor variations in lead forming or tape-and-reel packaging but do not affect PCB mounting compatibility.

Q: What is the significance of the forward voltage (Vf) differences between parts?

A: Forward voltage drop directly affects power dissipation and thermal performance. Lower forward voltage results in reduced heat generation at the same current level. For example, MBR10H100CT-E3/45 exhibits 760 mV @ 5 A compared to 920 mV @ 7.5 A for the MBR15100CT. In thermal-constrained applications, selecting a substitute with lower forward voltage improves efficiency and reduces cooling requirements.

Q: What does AEC-Q101 qualification indicate?

A: AEC-Q101 is an automotive-grade qualification standard. Parts bearing this qualification (MBR10100CT-G1 and MBR20100CT-G1) have undergone additional reliability testing and are suitable for automotive and high-reliability applications. These parts are not required for general industrial applications but provide enhanced reliability assurance when specified.

Q: Can I use a 5 A rated part in place of a 15 A rated part?

A: No. Using a lower current-rated part in a circuit designed for higher current will cause the device to exceed its thermal and electrical limits, resulting in excessive junction temperature, accelerated degradation, and potential catastrophic failure. Current rating substitution is only permissible when the actual circuit current demand is confirmed to be below the substitute part's rating.

Q: What is the difference between reverse leakage current specifications?

A: Reverse leakage current (Ir) is the small current that flows through the diode when reverse-biased. Lower reverse leakage indicates better diode quality and lower standby power consumption. MBR10H100CT-E3/45 exhibits 3.5 µA @ 100 V compared to 100 µA @ 100 V for the MBR15100CT. In low-power or precision applications, lower reverse leakage may be advantageous.

Q: Are all substitute parts available in the same packaging format (Tube)?

A: Yes. All substitute parts listed are supplied in Tube packaging, consistent with the MBR15100CT. This ensures compatibility with standard component handling and storage procedures.

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