MBR150G Equivalent & Substitute Parts

Part Overview

The MBR150G is a Schottky rectifier diode manufactured by onsemi, rated for 50 V DC reverse voltage and 1 A average rectified current in an axial through-hole package (DO-204AL, DO-41). This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The MBR150G serves applications requiring fast recovery Schottky diode performance with moderate voltage and current ratings in through-hole form factor.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	50 V
Current - Average Rectified (Io)	1 A
Voltage - Forward (Vf) (Max) @ If	750 mV @ 1 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr	500 µA @ 50 V
Mounting Type	Through Hole
Package / Case	DO-204AL, DO-41, Axial
Operating Temperature - Junction	-65°C ~ 150°C
Technology	Schottky

Substitute Part Grouping Explanation

Substitution of the MBR150G is determined by the following critical parameters:

Voltage Rating: The MBR150G operates at 50 V maximum reverse voltage. Substitute parts must meet or exceed this voltage specification to ensure safe operation in the original circuit.

Current Rating: The 1 A average rectified current requirement must be matched or exceeded by substitute components.

Package Type: The axial through-hole package (DO-204AL, DO-41) is mandatory for mechanical and electrical compatibility with existing PCB layouts and component mounting.

Speed Characteristic: Fast recovery performance (≤ 500 ns, > 200 mA) is required to maintain switching performance in the original application.

Temperature Range: The operating junction temperature range of -65°C to 150°C defines the thermal operating envelope.

Substitute parts are grouped into two categories:

Category A - Direct Voltage Match (50 V): Parts with 50 V reverse voltage rating provide identical voltage performance to the MBR150G. These include SB150-E3/54 and SB150-E3/73 from Vishay.

Category B - Lower Voltage Rating (40 V): Parts rated at 40 V reverse voltage (1N5819-AP, 1N5819-BP, 1N5819G, 1N5819H, SB140-E3/53, SB140-E3/54) are suitable only for applications where the circuit operates at or below 40 V maximum reverse voltage. These parts are not suitable for circuits designed to the full 50 V specification of the MBR150G.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf (Max) @ If	Speed	Ir @ Vr	Package	Tj Range	Product Status
MBR150G	onsemi	50 V	1 A	750 mV @ 1 A	≤ 500 ns	500 µA @ 50 V	DO-204AL, DO-41	-65°C ~ 150°C	Obsolete
1N5819-AP	Micro Commercial Co	40 V	1 A	600 mV @ 1 A	≤ 500 ns	1 mA @ 40 V	DO-204AL, DO-41	-55°C ~ 125°C	Active
1N5819-BP	Micro Commercial Co	40 V	1 A	600 mV @ 1 A	≤ 500 ns	1 mA @ 40 V	DO-204AL, DO-41	-55°C ~ 125°C	Active
1N5819G	Microchip Technology	40 V	1 A	600 mV @ 1 A	≤ 500 ns	1 mA @ 40 V	DO-204AL, DO-41	-65°C ~ 150°C	Active
1N5819H	Taiwan Semiconductor Corporation	40 V	1 A	600 mV @ 1 A	≤ 500 ns	1 mA @ 40 V	DO-204AL, DO-41	-55°C ~ 125°C	Active
SB140-E3/53	Vishay General Semiconductor - Diodes Division	40 V	1 A	480 mV @ 1 A	≤ 500 ns	500 µA @ 40 V	DO-204AL, DO-41	-65°C ~ 125°C	Active
SB140-E3/54	Vishay General Semiconductor - Diodes Division	40 V	1 A	480 mV @ 1 A	≤ 500 ns	500 µA @ 40 V	DO-204AL, DO-41	-65°C ~ 150°C	Active
SB150-E3/54	Vishay General Semiconductor - Diodes Division	50 V	1 A	650 mV @ 1 A	≤ 500 ns	500 µA @ 50 V	DO-204AL, DO-41	-65°C ~ 150°C	Active
SB150-E3/73	Vishay General Semiconductor - Diodes Division	50 V	1 A	650 mV @ 1 A	≤ 500 ns	500 µA @ 50 V	DO-204AL, DO-41	-65°C ~ 150°C	Active

Engineering Selection Recommendations

Direct Replacement (50 V Voltage Class)

SB150-E3/54 and SB150-E3/73 from Vishay General Semiconductor - Diodes Division are direct replacements for the MBR150G. Both parts maintain the 50 V reverse voltage rating, 1 A current rating, and axial through-hole package configuration. These parts are active products with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). The operating temperature range of -65°C to 150°C matches the MBR150G specification. Forward voltage is slightly lower (650 mV vs. 750 mV), which represents improved performance. Both parts are available in high inventory quantities (27,918 and 4,200 units respectively).

Alternative Selection (40 V Voltage Class)

For applications where the circuit operates at maximum 40 V reverse voltage, the following active parts are suitable alternatives:

1N5819G (Microchip Technology) offers the closest thermal match to the MBR150G with an operating range of -65°C to 150°C. This part is active and widely available (1,623 units in stock).

SB140-E3/54 (Vishay General Semiconductor - Diodes Division) provides the same -65°C to 150°C temperature range with superior forward voltage performance (480 mV vs. 750 mV). This part has the highest inventory availability (10,400 units).

1N5819-BP (Micro Commercial Co) is an active product with 1,029 units in stock, suitable for applications with reduced temperature range requirements (-55°C to 125°C).

1N5819H (Taiwan Semiconductor Corporation) includes automotive qualification (AEC-Q101) and is suitable for automotive applications requiring 40 V operation.

Compliance and Regulatory Status

All substitute parts listed maintain ROHS3 compliance and REACH unaffected status, consistent with the MBR150G. All parts are classified under ECCN EAR99 and HTSUS 8541.10.0080.

Frequently Asked Questions (FAQ)

Q: Can I use a 40 V rated diode in place of the MBR150G in my circuit?

A: Only if your circuit operates at a maximum reverse voltage of 40 V or less. The MBR150G is rated for 50 V. Using a 40 V part in a circuit designed for 50 V operation creates risk of diode failure. Verify your actual circuit voltage requirements before selecting a 40 V substitute.

Q: What is the difference between SB150-E3/54 and SB150-E3/73?

A: Both parts are identical in electrical specifications (50 V, 1 A, -65°C to 150°C). The difference is in packaging format: SB150-E3/54 is supplied in cut tape (CT), while SB150-E3/73 is also supplied in cut tape (CT). Both are suitable direct replacements for the MBR150G.

Q: Why does the 1N5819G have a lower forward voltage (600 mV) than the MBR150G (750 mV)?

A: Forward voltage variation is normal across different manufacturers and process technologies. The 1N5819G's lower forward voltage represents improved efficiency in the forward-biased state. This is a beneficial characteristic and does not affect substitutability for 40 V applications.

Q: Is the MBR150G still available for purchase?

A: The MBR150G is classified as obsolete. Direct procurement of new MBR150G units is not recommended for new designs. Use active substitute parts such as SB150-E3/54 or SB150-E3/73 for 50 V applications, or 1N5819G for 40 V applications.

Q: What is the difference between DO-204AL and DO-41 package designations?

A: DO-204AL and DO-41 refer to the same axial through-hole package. DO-204AL is the formal JEDEC designation, while DO-41 is the legacy designation. These terms are used interchangeably for this component category.

Q: Can I use 1N5819-AP or 1N5819-BP interchangeably?

A: Yes, for 40 V applications. Both parts are manufactured by Micro Commercial Co with identical electrical specifications (40 V, 1 A, 600 mV forward voltage, -55°C to 125°C). The suffix difference (-AP vs. -BP) indicates different manufacturing batches or packaging variants but does not affect electrical performance.

Q: Does the MBR150G have automotive qualification?

A: The MBR150G data provided does not indicate automotive qualification. The 1N5819H substitute part includes AEC-Q101 automotive qualification if your application requires this certification.

Q: What is the reverse leakage current difference between the MBR150G and substitute parts?

A: The MBR150G specifies 500 µA @ 50 V. The 40 V rated parts (1N5819 series) specify 1 mA @ 40 V, and the SB140 series specifies 500 µA @ 40 V. When comparing leakage at the same voltage, lower values indicate better performance. The SB140-E3/53 and SB140-E3/54 match the MBR150G leakage specification at their respective voltage ratings.

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