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MBR120LSFT3G Equivalent & Substitute Parts
Part Overview
The MBR120LSFT3G is an active Schottky rectifier diode manufactured by onsemi, rated for 20 V DC reverse voltage and 1 A average rectified current in a surface mount SOD-123FL package. This component is designed for fast recovery applications with switching speeds ≤ 500 ns at currents > 200 mA. The part is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1) and is suitable for general-purpose rectification circuits requiring low forward voltage drop and rapid switching characteristics.
Equivalent and substitute parts are necessary when the primary part number becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design optimization calls for components with improved electrical characteristics from different manufacturers while maintaining functional compatibility.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) Maximum | 20 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) Maximum @ If | 450 mV @ 1 A | mV |
| Speed Classification | Fast Recovery ≤ 500 ns, > 200 mA | ns |
| Current - Reverse Leakage @ Vr | 400 | µA @ 20 V |
| Technology | Schottky | — |
| Mounting Type | Surface Mount | — |
| Package / Case | SOD-123F | — |
| Operating Temperature - Junction | -55 to 125 | °C |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the MBR120LSFT3G is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) Maximum: 20 V (exact match required)
- Current - Average Rectified (Io): 1 A minimum (equal or higher acceptable)
- Technology: Schottky (required for fast recovery characteristics)
- Speed Classification: Fast Recovery ≤ 500 ns, > 200 mA (required)
- Mounting Type: Surface Mount (required)
- Package / Case: SOD-123F or compatible surface mount package (SOD-123FL, SOD-123W, DO-219AB acceptable)
- RoHS Status: ROHS3 Compliant (required)
Secondary Considerations:
- Voltage - Forward (Vf) Maximum @ If: Variations acceptable within typical Schottky diode range (340 mV to 500 mV @ rated current)
- Current - Reverse Leakage @ Vr: Variations acceptable (50 µA to 1 mA @ 20 V)
- Operating Temperature - Junction: Maximum -40°C to 150°C acceptable
- Moisture Sensitivity Level: MSL 1 (Unlimited) required
Parts are grouped as parametric equivalents when all primary criteria match exactly. Parts are grouped as similar alternatives when primary electrical criteria match but packaging or secondary electrical characteristics differ.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vr (Max) V | Io A | Vf (Max) mV @ If | Package / Case | Ir @ Vr µA | Tj (Max) °C | RoHS Status |
|---|---|---|---|---|---|---|---|---|
| MBR120LSFT3G | onsemi | 20 | 1 | 450 @ 1 A | SOD-123F | 400 @ 20 V | 125 | ROHS3 |
| MBR120LSFT1G | onsemi | 20 | 1 | 450 @ 1 A | SOD-123F | 400 @ 20 V | 125 | ROHS3 |
| CRS06(TE85L,Q,M) | Toshiba Semiconductor and Storage | 20 | 1 | 360 @ 1 A | SOD-123F | 1000 @ 20 V | 125 | ROHS3 |
| PMEG2005EH,115 | Nexperia USA Inc. | 20 | 0.5 | 390 @ 0.5 A | SOD-123F | 200 @ 20 V | 150 | ROHS3 |
| PMEG2010AEH,115 | Nexperia USA Inc. | 20 | 1 | 430 @ 1 A | SOD-123F | 200 @ 20 V | 150 | ROHS3 |
| PMEG2010BER,115 | Nexperia USA Inc. | 20 | 1 | 450 @ 1 A | SOD-123W | 50 @ 20 V | 150 | ROHS3 |
| PMEG2010EH,115 | Nexperia USA Inc. | 20 | 1 | 500 @ 1 A | SOD-123F | 200 @ 20 V | 150 | ROHS3 |
| PMEG2010ER,115 | Nexperia USA Inc. | 20 | 1 | 340 @ 1 A | SOD-123W | 1000 @ 20 V | 150 | ROHS3 |
| PMEG2015EH,115 | NXP Semiconductors | 20 | 1.5 | 660 @ 1.5 A | SOD-123F | 70 @ 20 V | 150 | ROHS3 |
| PMEG2020EH,115 | Nexperia USA Inc. | 20 | 2 | 525 @ 2 A | SOD-123F | 200 @ 20 V | 150 | ROHS3 |
| SL02-GS08 | Vishay General Semiconductor - Diodes Division | 20 | 1.1 | 420 @ 1.1 A | DO-219AB | 250 @ 20 V | 125 | ROHS3 |
Engineering Selection Recommendations
Parametric Equivalent (Direct Substitution):
MBR120LSFT1G is a parametric equivalent to MBR120LSFT3G. Both parts are manufactured by onsemi with identical electrical specifications (20 V, 1 A, 450 mV forward voltage, SOD-123F package). The difference is packaging format: MBR120LSFT3G is supplied in Tape & Reel (TR) while MBR120LSFT1G is supplied in Cut Tape (CT) & Digi-Reel®. Both are ROHS3 compliant and active products. Selection between these two depends on manufacturing process requirements and tape format compatibility.
Similar Alternatives (Functional Substitution with Considerations):
PMEG2010AEH,115 (Nexperia USA Inc.) is functionally compatible with identical 20 V, 1 A ratings and SOD-123F package. Forward voltage is 430 mV @ 1 A (20 mV lower than MBR120LSFT3G). This part carries AEC-Q100 automotive qualification and operates to 150°C maximum junction temperature. ROHS3 compliant.
PMEG2010EH,115 (Nexperia USA Inc.) matches 20 V, 1 A ratings in SOD-123F package but has forward voltage of 500 mV @ 1 A (50 mV higher than MBR120LSFT3G). This part carries AEC-Q100 automotive qualification and operates to 150°C maximum junction temperature. ROHS3 compliant.
PMEG2010BER,115 (Nexperia USA Inc.) matches 20 V, 1 A ratings but uses SOD-123W package instead of SOD-123F. Forward voltage is 450 mV @ 1 A (identical to MBR120LSFT3G). Reverse leakage is significantly lower at 50 µA @ 20 V. Operates to 150°C maximum junction temperature. ROHS3 compliant.
PMEG2010ER,115 (Nexperia USA Inc.) matches 20 V, 1 A ratings in SOD-123W package with forward voltage of 340 mV @ 1 A (110 mV lower than MBR120LSFT3G). Reverse leakage is 1 mA @ 20 V (higher than MBR120LSFT3G). Operates to 150°C maximum junction temperature. ROHS3 compliant.
CRS06(TE85L,Q,M) (Toshiba Semiconductor and Storage) matches 20 V, 1 A ratings in SOD-123F package with forward voltage of 360 mV @ 1 A (90 mV lower than MBR120LSFT3G). Reverse leakage is 1 mA @ 20 V. Operates to 125°C maximum junction temperature. ROHS3 compliant.
SL02-GS08 (Vishay General Semiconductor - Diodes Division) provides 20 V, 1.1 A rating in DO-219AB package with forward voltage of 420 mV @ 1.1 A. Reverse leakage is 250 µA @ 20 V. Operates to 125°C maximum junction temperature. ROHS3 compliant. Package format differs from SOD-123F.
PMEG2005EH,115 (Nexperia USA Inc.) is rated for 20 V, 500 mA (half the current rating of MBR120LSFT3G). This part is suitable only for applications requiring ≤ 500 mA average rectified current. SOD-123F package. ROHS3 compliant.
PMEG2015EH,115 (NXP Semiconductors) is rated for 20 V, 1.5 A (higher current rating than MBR120LSFT3G). This part is suitable for applications requiring up to 1.5 A. Forward voltage is 660 mV @ 1.5 A. SOD-123F package. ROHS3 compliant.
PMEG2020EH,115 (Nexperia USA Inc.) is rated for 20 V, 2 A (higher current rating than MBR120LSFT3G). This part is suitable for applications requiring up to 2 A. Forward voltage is 525 mV @ 2 A. Carries AEC-Q100 automotive qualification. SOD-123F package. ROHS3 compliant.
All substitute parts listed maintain the required 20 V reverse voltage rating, Schottky technology, fast recovery speed classification, surface mount mounting type, and ROHS3 compliance. Selection among alternatives depends on specific application requirements for forward voltage drop, reverse leakage current, operating temperature range, package format, and current rating.
Frequently Asked Questions (FAQ)
Q: Can MBR120LSFT1G be used as a direct replacement for MBR120LSFT3G?
A: Yes. MBR120LSFT1G is a parametric equivalent with identical electrical specifications (20 V, 1 A, 450 mV forward voltage, SOD-123F package). The only difference is the packaging format: MBR120LSFT3G uses Tape & Reel (TR) while MBR120LSFT1G uses Cut Tape (CT) & Digi-Reel®. Compatibility depends on your manufacturing equipment's tape format requirements.
Q: What is the difference between SOD-123F and SOD-123FL packages?
A: Both SOD-123F and SOD-123FL are surface mount packages with the same electrical footprint and mechanical dimensions. SOD-123FL is the supplier device package designation for MBR120LSFT3G. The packages are mechanically and electrically compatible for PCB assembly purposes.
Q: Can I use PMEG2010AEH,115 instead of MBR120LSFT3G?
A: Yes, with consideration of forward voltage difference. PMEG2010AEH,115 has identical 20 V, 1 A ratings and SOD-123F package. Forward voltage is 430 mV @ 1 A compared to 450 mV for MBR120LSFT3G (20 mV lower). This lower forward voltage drop may improve circuit efficiency. The part is AEC-Q100 qualified and operates to 150°C maximum junction temperature.
Q: Why does CRS06(TE85L,Q,M) have lower forward voltage than MBR120LSFT3G?
A: Forward voltage variation is a normal characteristic difference between Schottky diodes from different manufacturers. CRS06(TE85L,Q,M) exhibits 360 mV @ 1 A compared to 450 mV for MBR120LSFT3G. Lower forward voltage reduces power dissipation in rectification circuits. Both parts meet the 20 V, 1 A functional requirements.
Q: Can I use PMEG2020EH,115 (2 A rated) in place of MBR120LSFT3G (1 A rated)?
A: Yes. PMEG2020EH,115 is rated for 20 V, 2 A, which exceeds the 1 A requirement of MBR120LSFT3G. Higher current rating provides design margin and is functionally compatible. The part uses SOD-123F package and is AEC-Q100 qualified. Forward voltage is 525 mV @ 2 A.
Q: What is the significance of AEC-Q100 qualification on substitute parts?
A: AEC-Q100 is an automotive qualification standard. Parts carrying this qualification (such as PMEG2010AEH,115, PMEG2010EH,115, and PMEG2020EH,115) have undergone additional reliability testing and are suitable for automotive applications. MBR120LSFT3G does not carry this qualification but is suitable for general-purpose applications.
Q: Why do some substitute parts have different operating temperature ranges?
A: Operating temperature range is a design characteristic that varies by manufacturer. MBR120LSFT3G operates from -55°C to 125°C junction temperature. Nexperia and NXP parts typically operate to 150°C maximum junction temperature. Higher maximum operating temperature provides additional thermal margin in high-temperature applications.
Q: Can I use SL02-GS08 (DO-219AB package) instead of MBR120LSFT3G (SOD-123F package)?
A: SL02-GS08 is electrically compatible (20 V, 1.1 A, 420 mV forward voltage) but uses a different package format (DO-219AB instead of SOD-123F). Package substitution requires PCB layout modification and is not a direct drop-in replacement. Use only if PCB design accommodates DO-219AB footprint.
Q: What does "Fast Recovery ≤ 500 ns, > 200 mA" mean?
A: This specification indicates the diode's switching speed classification. The reverse recovery time is ≤ 500 nanoseconds when switching currents greater than 200 mA. This fast recovery characteristic is essential for high-frequency rectification and switching applications. All listed substitute parts maintain this specification.
Q: Are all substitute parts ROHS3 compliant?
A: Yes. All substitute parts listed in this reference are ROHS3 compliant, matching the compliance status of MBR120LSFT3G. ROHS3 compliance indicates the parts are free from restricted substances (lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, and polybrominated diphenyl ethers).
Q: What is the difference between reverse leakage current values across substitute parts?
A: Reverse leakage current (Ir) varies by manufacturer and design. MBR120LSFT3G specifies 400 µA @ 20 V. Substitute parts range from 50 µA (PMEG2010BER,115) to 1 mA (CRS06(TE85L,Q,M) and PMEG2010ER,115). Lower reverse leakage reduces standby power consumption. Higher reverse leakage is acceptable in most rectification applications but may impact low-power circuit performance.
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