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MBR120LSFT1 Schottky Diode Equivalent & Substitute Parts
Part Overview
The MBR120LSFT1 is a 20V, 1A Schottky rectifier diode manufactured by onsemi in SOD-123FL surface mount package. This component is classified as obsolete, which necessitates identification of equivalent and substitute parts for ongoing design support and procurement. The part features fast recovery characteristics suitable for low-voltage rectification applications requiring minimal forward voltage drop and rapid switching performance.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) Maximum | 20 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) Maximum @ If | 450 mV @ 1 A | mV |
| Speed Classification | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Current - Reverse Leakage @ Vr | 400 µA @ 20 V | µA |
| Mounting Type | Surface Mount | — |
| Package / Case | SOD-123F | — |
| Operating Temperature - Junction | -55 to 125 | °C |
| Technology | Schottky | — |
| RoHS Status | Non-compliant | — |
Substitute Part Grouping Explanation
Substitution of the MBR120LSFT1 is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) rating must equal or exceed 20V
- Current - Average Rectified (Io) must equal or exceed 1A
- Technology must be Schottky
- Speed classification must be Fast Recovery ≤ 500ns, > 200mA (Io)
- Mounting type must be Surface Mount
Secondary Compatibility Factors:
- Package / Case compatibility (SOD-123F preferred for direct replacement; alternative packages acceptable if mechanical constraints permit)
- Operating temperature range must encompass application requirements
- RoHS compliance status for regulatory alignment
Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications with different packaging or compliance status) and Similar Parts (matching core electrical parameters with acceptable variations in forward voltage, reverse leakage, or package form factor).
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) | Io | Vf @ If | Package | Status | RoHS |
|---|---|---|---|---|---|---|---|
| MBR120LSFT1 | onsemi | 20V | 1A | 450 mV @ 1A | SOD-123F | Obsolete | Non-compliant |
| MBR120LSFT1G | onsemi | 20V | 1A | 450 mV @ 1A | SOD-123F | Active | ROHS3 Compliant |
| MBR120LSFT3G | onsemi | 20V | 1A | 450 mV @ 1A | SOD-123F | Active | ROHS3 Compliant |
| CRS06(TE85L,Q,M) | Toshiba Semiconductor and Storage | 20V | 1A | 360 mV @ 1A | SOD-123F | Active | ROHS3 Compliant |
| DFLS130-7 | Diodes Incorporated | 30V | 1A | 420 mV @ 1A | POWERDI®123 | Active | ROHS3 Compliant |
| DFLS130L-7 | Diodes Incorporated | 30V | 1A | 310 mV @ 1A | POWERDI®123 | Active | ROHS3 Compliant |
| MBRX120LF-TP | Micro Commercial Co | 20V | 1A | 360 mV @ 1A | SOD-123 | Active | ROHS3 Compliant |
| PMEG2005EH,115 | Nexperia USA Inc. | 20V | 500mA | 390 mV @ 500mA | SOD-123F | Active | ROHS3 Compliant |
| PMEG2010AEH,115 | Nexperia USA Inc. | 20V | 1A | 430 mV @ 1A | SOD-123F | Active | ROHS3 Compliant |
| PMEG2010BER,115 | Nexperia USA Inc. | 20V | 1A | 450 mV @ 1A | SOD-123W | Active | ROHS3 Compliant |
| PMEG2010EH,115 | Nexperia USA Inc. | 20V | 1A | 500 mV @ 1A | SOD-123F | Active | ROHS3 Compliant |
Engineering Selection Recommendations
Direct Replacement (Parametric Equivalents):
MBR120LSFT1G and MBR120LSFT3G are parametric equivalents of the obsolete MBR120LSFT1, offering identical electrical specifications with active product status and ROHS3 compliance. MBR120LSFT1G is supplied in Cut Tape (CT) & Digi-Reel® packaging, while MBR120LSFT3G is supplied in Tape & Reel (TR) format. Both maintain the SOD-123F package footprint and are suitable for direct substitution in existing designs.
Compliant Alternatives (20V, 1A Rating):
PMEG2010AEH,115 and PMEG2010EH,115 from Nexperia USA Inc. provide 20V, 1A Schottky rectification in SOD-123F package with ROHS3 compliance. PMEG2010AEH,115 includes AEC-Q100 automotive qualification. MBRX120LF-TP from Micro Commercial Co offers 20V, 1A performance in SOD-123 package with improved forward voltage characteristics (360 mV @ 1A).
Higher Voltage Alternatives (30V Rating):
DFLS130-7 and DFLS130L-7 from Diodes Incorporated provide 30V reverse voltage rating with 1A current capacity, offering design margin for applications with voltage transients. These parts use PowerDI™ 123 package. DFLS130L-7 exhibits superior forward voltage performance (310 mV @ 1A) compared to the original part.
Lower Current Alternative:
PMEG2005EH,115 from Nexperia USA Inc. is rated for 500mA average rectified current at 20V reverse voltage. This part is suitable only for applications where load current does not exceed 500mA.
All recommended alternatives carry ROHS3 compliance and active product status, ensuring long-term availability and regulatory alignment.
Frequently Asked Questions (FAQ)
Q: Can MBR120LSFT1G directly replace MBR120LSFT1 in existing PCB designs?
A: Yes. MBR120LSFT1G is a parametric equivalent with identical electrical specifications (20V, 1A, 450 mV forward voltage @ 1A) and SOD-123F package footprint. The primary difference is active product status and ROHS3 compliance. No circuit modifications are required.
Q: What is the difference between MBR120LSFT1G and MBR120LSFT3G?
A: Both parts are parametric equivalents with identical electrical performance. The difference is packaging format: MBR120LSFT1G is supplied in Cut Tape (CT) & Digi-Reel® format, while MBR120LSFT3G is supplied in Tape & Reel (TR) format. Selection depends on assembly equipment compatibility and procurement volume requirements.
Q: Can PMEG2010EH,115 replace MBR120LSFT1 in all applications?
A: PMEG2010EH,115 matches the 20V, 1A electrical rating and SOD-123F package. However, forward voltage is specified at 500 mV @ 1A compared to 450 mV for the original part. This 50 mV difference may impact power dissipation in high-current or thermally constrained applications. Verify thermal performance in your specific circuit.
Q: Why are DFLS130-7 and DFLS130L-7 listed as alternatives if they have 30V rating?
A: These parts exceed the 20V reverse voltage requirement, providing design margin for transient overvoltage conditions. They maintain 1A current capacity and fast recovery characteristics. The higher voltage rating does not degrade performance in 20V applications. DFLS130L-7 offers superior forward voltage (310 mV @ 1A), reducing power dissipation.
Q: Is PMEG2005EH,115 suitable as a substitute?
A: PMEG2005EH,115 is rated for 500mA average rectified current, which is 50% of the original part's 1A rating. This part is suitable only for applications where maximum load current does not exceed 500mA. For full 1A operation, use PMEG2010AEH,115 or PMEG2010EH,115 instead.
Q: What does ROHS3 compliance mean for component selection?
A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. The original MBR120LSFT1 is non-compliant. Selecting ROHS3-compliant alternatives ensures regulatory alignment for new designs and supports environmental standards.
Q: Can MBRX120LF-TP replace MBR120LSFT1 despite different package designation?
A: MBRX120LF-TP uses SOD-123 package while MBR120LSFT1 uses SOD-123F. Both packages are mechanically compatible with SOD-123F footprints on modern PCBs. MBRX120LF-TP offers improved forward voltage (360 mV @ 1A) and extended temperature range (-65°C to 125°C). Verify PCB layout compatibility before substitution.
Q: Does CRS06(TE85L,Q,M) from Toshiba offer advantages over onsemi alternatives?
A: CRS06(TE85L,Q,M) provides 20V, 1A Schottky rectification with superior forward voltage (360 mV @ 1A) and SOD-123F package compatibility. It is manufactured by Toshiba Semiconductor and Storage with ROHS3 compliance and active product status. Selection depends on supplier availability and design preference for multi-source qualification.
Q: What is the significance of "Fast Recovery ≤ 500ns, > 200mA (Io)" specification?
A: This specification indicates the diode exhibits fast recovery time (switching speed) when conducting currents exceeding 200mA. Recovery time of 500ns or less ensures minimal reverse current during switching transitions, critical for rectification efficiency and EMI performance. All listed substitutes maintain this specification.
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