MBR120ESFT3G Equivalent & Substitute Parts

Part Overview

The MBR120ESFT3G is an onsemi Schottky rectifier diode rated for 20 V DC reverse voltage and 1 A average rectified current in a SOD-123FL surface mount package. This component is classified as Active product status and is RoHS3 compliant. Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory availability changes, or when specific performance characteristics within the allowed parameter range better suit application requirements.

Substiute Parts

MBR120ESFT3G
onsemiIn Stock: 1699MBR120ESFT3G Datasheet
MBR120ESFT3G
Current Part
CRS06(TE85L,Q,M)
Toshiba Semiconductor and StorageIn Stock: 273216CRS06(TE85L,Q,M) Datasheet
CRS06(TE85L,Q,M)
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PMEG2005EH,115
Nexperia USA Inc.In Stock: 42389PMEG2005EH,115 Datasheet
PMEG2005EH,115
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PMEG2010AEH,115
Nexperia USA Inc.In Stock: 16254PMEG2010AEH,115 Datasheet
PMEG2010AEH,115
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PMEG2010BER,115
Nexperia USA Inc.In Stock: 17006PMEG2010BER,115 Datasheet
PMEG2010BER,115
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PMEG2010EH,115
Nexperia USA Inc.In Stock: 3128PMEG2010EH,115 Datasheet
PMEG2010EH,115
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PMEG2010ER,115
Nexperia USA Inc.In Stock: 2302PMEG2010ER,115 Datasheet
PMEG2010ER,115
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PMEG2015EH,115
NXP SemiconductorsIn Stock: 95352PMEG2015EH,115 Datasheet
PMEG2015EH,115
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PMEG2020EH,115
Nexperia USA Inc.In Stock: 38920PMEG2020EH,115 Datasheet
PMEG2020EH,115
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SL02-GS08
Vishay General Semiconductor - Diodes DivisionIn Stock: 43948SL02-GS08 Datasheet
SL02-GS08
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SM5817PL-TP
Micro Commercial CoIn Stock: 155669SM5817PL-TP Datasheet
SM5817PL-TP
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 20 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 530 mV @ 1 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io) ns
Current - Reverse Leakage @ Vr 10 µA @ 20 V
Technology Schottky
Mounting Type Surface Mount
Package / Case SOD-123F
Operating Temperature - Junction -65 to 150 °C
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the MBR120ESFT3G are qualified based on the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 20 V (exact match required)
  • Current - Average Rectified (Io): 1 A (exact match or higher rating acceptable)
  • Technology: Schottky (required)
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io) (required)
  • Mounting Type: Surface Mount (required)
  • Package / Case: SOD-123F or equivalent footprint (SOD-123FL, SOD-123W, S-FLAT, DO-219AB acceptable)
  • RoHS Status: ROHS3 Compliant (required)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) (required)

Secondary Considerations:

  • Voltage - Forward (Vf) (Max) @ If: Variations within the Schottky diode characteristic range
  • Current - Reverse Leakage @ Vr: Variations acceptable within fast recovery Schottky specifications
  • Operating Temperature - Junction: Maximum rating of 125°C or higher acceptable

Substitute parts meeting these criteria are functionally interchangeable in applications designed for the MBR120ESFT3G specifications.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] Package / Case Tj (Max) [°C] RoHS Status
MBR120ESFT3G onsemi 20 1 530 @ 1 A SOD-123F 150 ROHS3
CRS06(TE85L,Q,M) Toshiba Semiconductor and Storage 20 1 360 @ 1 A SOD-123F 125 ROHS3
PMEG2005EH,115 Nexperia USA Inc. 20 0.5 390 @ 0.5 A SOD-123F 150 ROHS3
PMEG2010AEH,115 Nexperia USA Inc. 20 1 430 @ 1 A SOD-123F 150 ROHS3
PMEG2010BER,115 Nexperia USA Inc. 20 1 450 @ 1 A SOD-123W 150 ROHS3
PMEG2010EH,115 Nexperia USA Inc. 20 1 500 @ 1 A SOD-123F 150 ROHS3
PMEG2010ER,115 Nexperia USA Inc. 20 1 340 @ 1 A SOD-123W 150 ROHS3
PMEG2015EH,115 NXP Semiconductors 20 1.5 660 @ 1.5 A SOD-123F 150 ROHS3
PMEG2020EH,115 Nexperia USA Inc. 20 2 525 @ 2 A SOD-123F 150 ROHS3
SL02-GS08 Vishay General Semiconductor - Diodes Division 20 1.1 420 @ 1.1 A DO-219AB 125 ROHS3
SM5817PL-TP Micro Commercial Co 20 1 450 @ 1 A SOD-123F 125 ROHS3

Engineering Selection Recommendations

Direct Equivalents (SOD-123F Package, 1 A Rating):

PMEG2010AEH,115, PMEG2010EH,115, and SM5817PL-TP are direct functional equivalents to the MBR120ESFT3G. All three maintain the 20 V reverse voltage rating, 1 A average rectified current, SOD-123F package footprint, and RoHS3 compliance. PMEG2010AEH,115 and PMEG2010EH,115 carry AEC-Q100 automotive qualification, suitable for applications requiring automotive-grade reliability. SM5817PL-TP provides equivalent performance with extended inventory availability.

Alternative Package Options (1 A Rating):

PMEG2010BER,115 and PMEG2010ER,115 provide 1 A performance in SOD-123W package format. These are suitable when PCB layout accommodates the wider SOD-123W footprint. Both maintain 20 V reverse voltage rating and RoHS3 compliance.

Higher Current Ratings (20 V Reverse Voltage):

PMEG2015EH,115 (1.5 A) and PMEG2020EH,115 (2 A) are suitable for applications requiring higher current capacity while maintaining the 20 V reverse voltage specification. Both are RoHS3 compliant and AEC-Q100 qualified.

Lower Current Rating:

PMEG2005EH,115 is rated for 500 mA average rectified current. This part is suitable only for applications with reduced current requirements below 1 A.

Alternative Voltage/Current Combination:

CRS06(TE85L,Q,M) provides 20 V reverse voltage and 1 A rating in S-FLAT package. This Toshiba part is RoHS3 compliant and suitable for applications where the S-FLAT footprint is acceptable.

Alternative Package (1.1 A Rating):

SL02-GS08 is a Vishay eSMP® series Schottky diode rated for 1.1 A in DO-219AB (SMF) package. This part maintains 20 V reverse voltage and RoHS3 compliance, suitable for applications accommodating the DO-219AB footprint.

Frequently Asked Questions (FAQ)

Q: Can PMEG2005EH,115 replace MBR120ESFT3G?

A: PMEG2005EH,115 is rated for 500 mA average rectified current, while MBR120ESFT3G is rated for 1 A. PMEG2005EH,115 is not suitable as a direct replacement for applications requiring 1 A operation. It is only applicable for circuits designed for 500 mA or lower current.

Q: What is the difference between SOD-123F and SOD-123FL packages?

A: SOD-123F and SOD-123FL are equivalent footprints for surface mount Schottky diodes. Both are acceptable for the MBR120ESFT3G application. The "L" designation in SOD-123FL indicates lead-free termination, consistent with RoHS3 compliance.

Q: Are PMEG2010BER,115 and PMEG2010ER,115 compatible with MBR120ESFT3G?

A: PMEG2010BER,115 and PMEG2010ER,115 are functionally equivalent to MBR120ESFT3G in electrical performance (20 V, 1 A, Schottky, fast recovery). However, they use SOD-123W package instead of SOD-123F. Compatibility depends on PCB layout. If the PCB footprint is designed for SOD-123F, these parts require layout modification.

Q: Can I use PMEG2015EH,115 or PMEG2020EH,115 in place of MBR120ESFT3G?

A: Yes. PMEG2015EH,115 (1.5 A) and PMEG2020EH,115 (2 A) are electrically compatible with MBR120ESFT3G. Both maintain 20 V reverse voltage rating, Schottky technology, fast recovery speed, SOD-123F package, and RoHS3 compliance. Higher current ratings provide design margin for applications with variable or peak current conditions.

Q: What is the significance of AEC-Q100 qualification?

A: AEC-Q100 qualification indicates the part meets automotive industry reliability standards. PMEG2010AEH,115, PMEG2010EH,115, and PMEG2020EH,115 carry this qualification. For non-automotive applications, AEC-Q100 qualification is not required but provides additional assurance of component reliability.

Q: How do forward voltage differences affect substitution?

A: Forward voltage (Vf) variations among Schottky diodes are normal within the technology. MBR120ESFT3G specifies 530 mV maximum at 1 A. Substitute parts range from 340 mV to 660 mV depending on current rating and manufacturer. Lower Vf reduces power dissipation; higher Vf increases dissipation. Selection depends on thermal design requirements. All listed substitutes operate within acceptable Schottky diode characteristics.

Q: Is CRS06(TE85L,Q,M) a suitable replacement?

A: CRS06(TE85L,Q,M) is electrically equivalent (20 V, 1 A, Schottky, fast recovery, RoHS3). However, it uses S-FLAT (1.6x3.5) package instead of SOD-123F. Compatibility requires PCB footprint verification. The part is suitable only if the PCB layout accommodates S-FLAT dimensions.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean?

A: This specification indicates the diode has a reverse recovery time of 500 nanoseconds or less when switching from forward to reverse bias at currents exceeding 200 mA. This characteristic is essential for high-frequency switching applications. All listed substitute parts meet this requirement.

Q: Can SL02-GS08 replace MBR120ESFT3G?

A: SL02-GS08 is electrically compatible (20 V, 1.1 A, Schottky, fast recovery, RoHS3). However, it uses DO-219AB (SMF) package instead of SOD-123F. Compatibility requires PCB footprint verification. The part is suitable only if the PCB layout accommodates DO-219AB dimensions.

Q: What is Moisture Sensitivity Level (MSL) 1?

A: MSL 1 indicates unlimited shelf life without moisture baking requirements. All listed parts carry MSL 1 rating, meaning they can be stored and handled without special moisture control procedures prior to soldering.

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