MBR1100RL Equivalent & Substitute Parts

Part Overview

The MBR1100RL is a Schottky rectifier diode rated for 100 V DC reverse voltage and 1 A average rectified current in an axial through-hole package (DO-204AL, DO-41). This component is classified as obsolete, though 5200 pieces remain in stock as new original inventory. The MBR1100RL is manufactured by onsemi and features fast recovery characteristics suitable for switching applications requiring low forward voltage drop and rapid reverse recovery.

Due to the obsolete product status, equivalent substitute parts from active manufacturers are necessary for new designs and long-term supply chain continuity. Substitute components must maintain electrical equivalence across critical parameters including reverse voltage rating, forward current capacity, forward voltage characteristics, and recovery speed while accommodating different packaging formats and compliance standards.

Substiute Parts

MBR1100RL
onsemiIn Stock: 5299MBR1100RL Datasheet
MBR1100RL
Current Part
MBR1100RLG
onsemiIn Stock: 57711MBR1100RLG Datasheet
MBR1100RLG
Direct
1N6761
Microchip TechnologyIn Stock: 9161N6761 Datasheet
1N6761
Similar
1N6761-1
Microchip TechnologyIn Stock: 8941N6761-1 Datasheet
1N6761-1
Similar
SB1100-T
Diodes IncorporatedIn Stock: 11497SB1100-T Datasheet
SB1100-T
Similar
SB1100E-G
Comchip TechnologyIn Stock: 5980SB1100E-G Datasheet
SB1100E-G
Similar
SB1H100-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 16267SB1H100-E3/54 Datasheet
SB1H100-E3/54
Similar
SB1H100-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 15188SB1H100-E3/73 Datasheet
SB1H100-E3/73
Similar
SR1010-AP
Micro Commercial CoIn Stock: 941SR1010-AP Datasheet
SR1010-AP
Similar
SR1010-BP
Micro Commercial CoIn Stock: 791SR1010-BP Datasheet
SR1010-BP
Similar
SR1010-TP
Micro Commercial CoIn Stock: 1479SR1010-TP Datasheet
SR1010-TP
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 790 mV @ 1 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io) ns
Current - Reverse Leakage @ Vr 500 µA @ 100 V
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -65°C ~ 175°C °C
Technology Schottky

Substitute Part Grouping Explanation

Substitution of the MBR1100RL is determined by strict equivalence across the following critical parameters:

Mandatory Electrical Equivalence:

  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1 A
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Technology: Schottky

Compatible Mechanical Parameters:

  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, or Axial variants

Acceptable Parameter Variations:

  • Voltage - Forward (Vf) (Max) @ If: Range 690 mV to 850 mV @ 1 A (all substitutes fall within this range)
  • Current - Reverse Leakage @ Vr: 1 µA to 500 µA @ 100 V (acceptable variation based on manufacturing process)
  • Operating Temperature - Junction: Minimum -55°C to -65°C; Maximum 125°C to 175°C (all substitutes meet or exceed the original specification)

All identified substitute parts meet these criteria and are classified as active products with current manufacturing status and improved compliance certifications.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If Speed Ir @ Vr Package Temp Range Product Status RoHS Status
MBR1100RL onsemi 100 V 1 A 790 mV @ 1 A ≤ 500ns 500 µA @ 100 V DO-204AL, DO-41 -65°C ~ 175°C Obsolete RoHS non-compliant
MBR1100RLG onsemi 100 V 1 A 790 mV @ 1 A ≤ 500ns 500 µA @ 100 V DO-204AL, DO-41 -65°C ~ 175°C Active ROHS3 Compliant
1N6761 Microchip Technology 100 V 1 A 690 mV @ 1 A ≤ 500ns 100 µA @ 100 V DO-204AL, DO-41 -65°C ~ 150°C Active Not specified
1N6761-1 Microchip Technology 100 V 1 A 690 mV @ 1 A ≤ 500ns 100 µA @ 100 V DO-204AL, DO-41 -65°C ~ 150°C Active Not specified
SB1100-T Diodes Incorporated 100 V 1 A 800 mV @ 1 A ≤ 500ns 500 µA @ 100 V DO-204AL, DO-41 -65°C ~ 125°C Active ROHS3 Compliant
SB1100E-G Comchip Technology 100 V 1 A 850 mV @ 1 A ≤ 500ns 500 µA @ 100 V DO-204AL, DO-41 -65°C ~ 150°C Active ROHS3 Compliant
SB1H100-E3/54 Vishay General Semiconductor 100 V 1 A 770 mV @ 1 A ≤ 500ns 1 µA @ 100 V DO-204AL, DO-41 -65°C ~ 175°C Active ROHS3 Compliant
SB1H100-E3/73 Vishay General Semiconductor 100 V 1 A 770 mV @ 1 A ≤ 500ns 1 µA @ 100 V DO-204AL, DO-41 -65°C ~ 175°C Active ROHS3 Compliant
SR1010-AP Micro Commercial Co 100 V 1 A 850 mV @ 1 A ≤ 500ns 500 µA @ 100 V DO-204AL, DO-41 -55°C ~ 125°C Active Not specified
SR1010-BP Micro Commercial Co 100 V 1 A 850 mV @ 1 A ≤ 500ns 500 µA @ 100 V DO-204AL, DO-41 -55°C ~ 125°C Active Not specified
SR1010-TP Micro Commercial Co 100 V 1 A 850 mV @ 1 A ≤ 500ns 500 µA @ 100 V DO-204AL, DO-41 -55°C ~ 125°C Active ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute - Direct Replacement:

MBR1100RLG (onsemi) is the direct successor to MBR1100RL. This part maintains identical electrical specifications and package format while transitioning to active product status and ROHS3 compliance. The MBR1100RLG is the preferred choice for applications requiring minimal design modification and maximum compatibility with existing layouts.

Secondary Substitutes - Electrical Equivalents:

The following parts provide full electrical equivalence with acceptable parameter variations:

SB1H100-E3/54 and SB1H100-E3/73 (Vishay General Semiconductor) offer superior reverse leakage characteristics (1 µA versus 500 µA) and extended maximum junction temperature (175°C), matching the original MBR1100RL specification. Both variants are ROHS3 compliant and available in active production status.

1N6761 and 1N6761-1 (Microchip Technology) provide the lowest forward voltage drop (690 mV) among all substitutes, resulting in reduced power dissipation. These parts are active products suitable for applications where thermal performance is critical.

SB1100-T (Diodes Incorporated) maintains electrical equivalence with ROHS3 compliance and active product status. Forward voltage is 800 mV, representing a moderate increase from the original specification.

SR1010-TP (Micro Commercial Co) is available in Tape & Reel packaging format with ROHS3 compliance and active status, suitable for automated assembly processes.

Tertiary Substitutes - Limited Temperature Range:

SR1010-AP, SR1010-BP, and SB1100E-G are electrically equivalent but feature reduced maximum junction temperature ratings (-55°C to 125°C or -65°C to 150°C). These parts are suitable only for applications operating within these temperature constraints.

Frequently Asked Questions (FAQ)

Q: Can MBR1100RLG be used as a direct replacement for MBR1100RL?

A: Yes. MBR1100RLG maintains identical electrical specifications (100 V, 1 A, 790 mV forward voltage, ≤ 500ns recovery time) and package format (DO-204AL, DO-41 axial). The primary differences are active product status and ROHS3 compliance. No circuit modifications are required.

Q: What is the difference between the Vishay SB1H100-E3/54 and SB1H100-E3/73 variants?

A: Both parts are electrically identical with 100 V rating, 1 A current, 770 mV forward voltage, and ≤ 500ns recovery time. The designation suffix indicates different packaging or tape specifications. Both are suitable substitutes for MBR1100RL.

Q: Why do some substitutes have lower forward voltage (1N6761 at 690 mV)?

A: Forward voltage variation is a normal characteristic of Schottky diodes across different manufacturers and manufacturing processes. The 1N6761 at 690 mV is within acceptable substitution parameters and results in lower power dissipation. This is an advantage in most applications.

Q: Are there temperature limitations when substituting MBR1100RL?

A: The original MBR1100RL operates from -65°C to 175°C. Most substitutes maintain this range or exceed it. However, SR1010-AP, SR1010-BP, and SB1100-T are limited to -55°C to 125°C or -65°C to 125°C. Verify application temperature requirements before selecting these alternatives.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current ranges from 1 µA (Vishay SB1H100 series) to 500 µA (onsemi, Diodes Incorporated, Micro Commercial Co). Lower leakage reduces standby power consumption and heat generation. Higher leakage is acceptable in most switching applications but may impact performance in precision analog circuits.

Q: Can I use SR1010-AP or SR1010-BP in new designs?

A: Yes, both parts are active products with electrical equivalence to MBR1100RL. However, the reduced temperature range (-55°C to 125°C) must be verified against application requirements. These parts are suitable for standard industrial and consumer applications operating within this temperature window.

Q: What packaging formats are available for substitutes?

A: All substitutes are available in through-hole axial format (DO-204AL, DO-41). Packaging options include Bulk, Cut Tape (CT), and Tape & Reel (TR). Select based on assembly process requirements: Bulk for manual assembly, Cut Tape for semi-automated processes, and Tape & Reel for fully automated pick-and-place systems.

Q: Are all substitutes RoHS compliant?

A: MBR1100RLG, SB1100-T, SB1100E-G, SB1H100-E3/54, SB1H100-E3/73, and SR1010-TP are ROHS3 compliant. The original MBR1100RL is RoHS non-compliant. Compliance status for 1N6761, 1N6761-1, SR1010-AP, and SR1010-BP is not specified in available data. Verify compliance requirements for your application before final selection.

Q: Which substitute offers the best overall performance?

A: Selection depends on application priorities. For direct replacement with improved compliance, use MBR1100RLG. For lowest power dissipation, use 1N6761. For lowest reverse leakage and extended temperature range, use SB1H100-E3/54 or SB1H100-E3/73. All substitutes meet the core electrical requirements of the original MBR1100RL.

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