MBR1100G Equivalent & Substitute Parts

Part Overview

The MBR1100G is an active Schottky rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 1 A average rectified current. The device features fast recovery characteristics (≤500 ns for currents >200 mA) and is packaged in DO-204AL/DO-41 axial through-hole configuration. This component is ROHS3 compliant and maintains active product status. Substitute parts are identified to address inventory availability, packaging preferences, or supply chain requirements while maintaining electrical and mechanical compatibility within specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	790 mV @ 1 A	mV
Speed	Fast Recovery ≤500 ns, >200 mA (Io)	ns
Current - Reverse Leakage @ Vr	500	µA @ 100 V
Mounting Type	Through Hole	—
Package / Case	DO-204AL, DO-41, Axial	—
Operating Temperature - Junction	-65 to 175	°C
Technology	Schottky	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the MBR1100G is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1 A
Technology: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, or Axial variants
Speed: Fast Recovery ≤500 ns, >200 mA (Io)
RoHS Status: ROHS3 Compliant

Allowable Parameter Variations:

Voltage - Forward (Vf) (Max) @ If: ±50 mV tolerance
Current - Reverse Leakage @ Vr: Within manufacturer specification range
Operating Temperature - Junction: Maximum rating ≥175°C

Both identified substitute parts (SB1100-T and SB1H100-E3/54) meet all mandatory equivalence criteria and fall within allowable parameter variations.

Parameter Comparison

Parameter	MBR1100G (onsemi)	SB1100-T (Diodes Inc.)	SB1H100-E3/54 (Vishay)
Voltage - DC Reverse (Vr) (Max)	100 V	100 V	100 V
Current - Average Rectified (Io)	1 A	1 A	1 A
Voltage - Forward (Vf) (Max) @ If	790 mV @ 1 A	800 mV @ 1 A	770 mV @ 1 A
Speed	Fast Recovery ≤500 ns, >200 mA	Fast Recovery ≤500 ns, >200 mA	Fast Recovery ≤500 ns, >200 mA
Current - Reverse Leakage @ Vr	500 µA @ 100 V	500 µA @ 100 V	1 µA @ 100 V
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial
Operating Temperature - Junction	-65 to 175°C	-65 to 125°C	Max 175°C
Technology	Schottky	Schottky	Schottky
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active

Engineering Selection Recommendations

MBR1100G (onsemi): Primary selection for applications requiring the full specified operating temperature range (-65°C to 175°C). ROHS3 compliant with active product status and established supply chain availability.

SB1100-T (Diodes Incorporated): Suitable for applications with operating temperature requirements not exceeding 125°C. Offers equivalent electrical performance with ROHS3 compliance and active product status. Available in Cut Tape packaging format. Forward voltage specification (800 mV @ 1 A) is within acceptable tolerance.

SB1H100-E3/54 (Vishay General Semiconductor - Diodes Division): Suitable for all temperature ranges up to 175°C maximum. Demonstrates superior reverse leakage performance (1 µA @ 100 V versus 500 µA @ 100 V). Forward voltage specification (770 mV @ 1 A) is within acceptable tolerance. ROHS3 compliant with active product status.

All three parts maintain electrical equivalence for Schottky rectifier applications requiring 100 V, 1 A specifications with fast recovery characteristics. Selection between substitutes depends on application temperature requirements, packaging format preference, and reverse leakage performance criteria.

Frequently Asked Questions (FAQ)

Q: Can SB1100-T be used in applications requiring operation above 125°C?

A: No. The SB1100-T maximum operating temperature is 125°C. For applications requiring sustained operation at temperatures between 125°C and 175°C, use MBR1100G or SB1H100-E3/54.

Q: What is the significance of the reverse leakage current difference between MBR1100G and SB1H100-E3/54?

A: SB1H100-E3/54 exhibits 1 µA reverse leakage at 100 V compared to 500 µA for MBR1100G. Lower reverse leakage reduces standby power dissipation and may be advantageous in low-power or precision applications. Both values are within acceptable Schottky diode specifications.

Q: Are all three parts mechanically interchangeable?

A: Yes. All three parts feature DO-204AL/DO-41 axial through-hole packaging and are mechanically interchangeable on standard PCB layouts designed for axial diodes.

Q: What is the maximum forward voltage difference between substitute parts?

A: The maximum forward voltage variation is 30 mV (770 mV for SB1H100-E3/54 to 800 mV for SB1100-T at 1 A). This variation is within typical Schottky diode tolerance and does not affect circuit functionality in standard rectifier applications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. MBR1100G, SB1100-T, and SB1H100-E3/54 are all ROHS3 compliant and REACH unaffected.

Q: What packaging formats are available for these parts?

A: MBR1100G is supplied in Bulk packaging. SB1100-T and SB1H100-E3/54 are supplied in Cut Tape (CT) packaging. Packaging format does not affect electrical or mechanical compatibility.

Q: Do all parts meet fast recovery specifications?

A: Yes. All three parts meet fast recovery specifications of ≤500 ns for currents >200 mA (Io).

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