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MBR1100 Equivalent & Substitute Parts
Part Overview
The MBR1100 is a Schottky rectifier diode rated for 100 V DC reverse voltage and 1 A average rectified current in a through-hole axial package (DO-204AL, DO-41). This component is classified as obsolete, though 2520 pieces remain in stock as new original inventory. The MBR1100 is manufactured by onsemi and features fast recovery characteristics suitable for switching applications requiring low forward voltage drop and rapid reverse recovery.
Due to the obsolete product status of the MBR1100, equivalent and substitute parts from active manufacturers are necessary for new designs, long-term availability assurance, and compliance with current regulatory standards including RoHS3 requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) | 1 | A |
| Voltage - Forward (Vf) (Max) @ If | 790 mV @ 1 A | mV |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | ns |
| Current - Reverse Leakage @ Vr | 500 | µA @ 100 V |
| Mounting Type | Through Hole | — |
| Package / Case | DO-204AL, DO-41, Axial | — |
| Operating Temperature - Junction | -65°C ~ 175°C | °C |
| Technology | Schottky | — |
Substitute Part Grouping Explanation
Substitution of the MBR1100 is determined by strict equivalence across the following critical parameters:
Mandatory Equivalence Criteria:
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1 A
- Technology: Schottky
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, or Axial variants
- Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
Acceptable Variation Parameters:
- Voltage - Forward (Vf) (Max) @ If: Range 690 mV to 850 mV @ 1 A
- Current - Reverse Leakage @ Vr: Range 1 µA to 500 µA @ 100 V
- Operating Temperature - Junction: Minimum -55°C to -65°C; Maximum 125°C to 175°C
- RoHS Status: Obsolete parts may be non-compliant; active substitutes must be RoHS3 compliant
All substitute parts listed meet the mandatory equivalence criteria and operate within acceptable variation ranges for forward voltage and reverse leakage characteristics.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) [V] | Io [A] | Vf (Max) @ 1A [mV] | Reverse Leakage @ 100V [µA] | Tj (Min~Max) [°C] | Product Status | RoHS Status | Package |
|---|---|---|---|---|---|---|---|---|---|
| MBR1100 | onsemi | 100 | 1 | 790 | 500 | -65 ~ 175 | Obsolete | Non-compliant | DO-204AL, DO-41 |
| MBR1100G | onsemi | 100 | 1 | 790 | 500 | -65 ~ 175 | Active | RoHS3 Compliant | DO-204AL, DO-41 |
| 1N6761 | Microchip Technology | 100 | 1 | 690 | 100 | -65 ~ 150 | Active | Not specified | DO-204AL, DO-41 |
| 1N6761-1 | Microchip Technology | 100 | 1 | 690 | 100 | -65 ~ 150 | Active | Not specified | DO-204AL, DO-41 |
| SB1100-T | Diodes Incorporated | 100 | 1 | 800 | 500 | -65 ~ 125 | Active | RoHS3 Compliant | DO-204AL, DO-41 |
| SB1100E-G | Comchip Technology | 100 | 1 | 850 | 500 | -65 ~ 150 | Active | RoHS3 Compliant | DO-204AL, DO-41 |
| SB1H100-E3/54 | Vishay General Semiconductor - Diodes Division | 100 | 1 | 770 | 1 | -65 ~ 175 | Active | RoHS3 Compliant | DO-204AL, DO-41 |
| SR1010-AP | Micro Commercial Co | 100 | 1 | 850 | 500 | -55 ~ 125 | Active | Not specified | DO-204AL, DO-41 |
| SR1010-BP | Micro Commercial Co | 100 | 1 | 850 | 500 | -55 ~ 125 | Active | Not specified | DO-204AL, DO-41 |
| SR1010-TP | Micro Commercial Co | 100 | 1 | 850 | 500 | -55 ~ 125 | Active | RoHS3 Compliant | DO-204AL, DO-41 |
Engineering Selection Recommendations
Primary Recommendation: MBR1100G
MBR1100G is the direct active equivalent manufactured by onsemi, the original MBR1100 manufacturer. This part maintains identical electrical specifications (100 V, 1 A, 790 mV forward voltage, 500 µA reverse leakage) and operating temperature range (-65°C to 175°C). MBR1100G holds active product status and is RoHS3 compliant, addressing regulatory requirements while ensuring design continuity. Inventory availability is 1290 pieces.
Secondary Recommendation: SB1H100-E3/54
SB1H100-E3/54 manufactured by Vishay General Semiconductor provides superior reverse leakage performance (1 µA versus 500 µA), forward voltage of 770 mV, and maintains the full operating temperature range (-65°C to 175°C) matching the original MBR1100. This part is RoHS3 compliant and offers the highest inventory availability at 16200 pieces. The reduced reverse leakage characteristic is beneficial for low-power applications.
Alternative Recommendation: 1N6761 / 1N6761-1
Microchip Technology's 1N6761 and 1N6761-1 provide superior forward voltage performance (690 mV) and significantly lower reverse leakage (100 µA). These parts are active and suitable for applications where lower forward voltage drop is critical. Operating temperature range is -65°C to 150°C, which is acceptable for most applications but does not extend to the full 175°C maximum of the original MBR1100. Inventory availability is 857 and 800 pieces respectively.
Packaging Consideration:
All substitute parts are available in DO-204AL and DO-41 through-hole packages, maintaining mechanical compatibility with the original MBR1100 axial package footprint.
Frequently Asked Questions (FAQ)
Q: Can MBR1100G be used as a direct replacement for MBR1100?
A: Yes. MBR1100G is the active equivalent from onsemi with identical electrical specifications, package type, and operating temperature range. The primary difference is product status (active versus obsolete) and RoHS3 compliance.
Q: What is the difference between forward voltage specifications across substitute parts?
A: Forward voltage (Vf) at 1 A ranges from 690 mV (1N6761 series) to 850 mV (SB1100E-G, SR1010 series). Lower forward voltage reduces power dissipation in the diode. The original MBR1100 specifies 790 mV. Selection depends on circuit requirements for voltage drop and thermal management.
Q: Why does SB1H100-E3/54 have lower reverse leakage (1 µA) compared to the original MBR1100 (500 µA)?
A: Reverse leakage variation is a normal characteristic difference between manufacturers and process technologies. Lower reverse leakage is generally beneficial for circuit performance, particularly in low-power or high-impedance applications. This does not prevent substitution.
Q: Are there temperature range limitations with substitute parts?
A: Most substitute parts operate from -65°C to 125°C or -65°C to 150°C. The original MBR1100 and MBR1100G extend to 175°C. For applications requiring the full 175°C maximum junction temperature, SB1H100-E3/54 is the only substitute maintaining this specification. SR1010 series parts have a minimum operating temperature of -55°C rather than -65°C.
Q: What is the significance of RoHS3 compliance?
A: RoHS3 compliance indicates the part meets current European Union Restriction of Hazardous Substances regulations. Obsolete parts like MBR1100 are typically non-compliant. Active substitutes with RoHS3 compliance are required for new designs and applications subject to regulatory requirements.
Q: Do all substitute parts use the same package footprint?
A: Yes. All substitute parts are available in DO-204AL and DO-41 through-hole axial packages, which are mechanically and electrically compatible with the original MBR1100 package. No PCB layout modifications are required.
Q: Which substitute part offers the best overall performance?
A: Selection depends on application requirements. MBR1100G provides design continuity with identical specifications. SB1H100-E3/54 offers superior reverse leakage and highest inventory. 1N6761 series provides lowest forward voltage. Evaluate based on specific circuit requirements for voltage drop, leakage current, and temperature range.
Q: Are SR1010 series parts suitable replacements?
A: SR1010-AP, SR1010-BP, and SR1010-TP meet the core electrical requirements (100 V, 1 A, fast recovery). However, they have a narrower operating temperature range (-55°C to 125°C) and higher forward voltage (850 mV). These parts are suitable for applications not requiring the full temperature range of the original MBR1100.
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