MBR1090G Equivalent & Substitute Parts

Part Overview

The MBR1090G is a Schottky rectifier diode manufactured by onsemi, rated for 90 V DC reverse voltage and 10 A average rectified current in a through-hole TO-220-2 package. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging and manufacturer options.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	90	V
Current - Average Rectified (Io)	10	A
Voltage - Forward (Vf) (Max) @ If	800 mV @ 10 A	mV
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	ns
Current - Reverse Leakage @ Vr	100	µA @ 90 V
Mounting Type	Through Hole	—
Package / Case	TO-220-2	—
Operating Temperature - Junction	-65°C ~ 175°C	°C
Technology	Schottky	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the MBR1090G are classified into two categories based on electrical parameter alignment:

Direct Equivalents (Identical Voltage Rating): Parts maintaining the 90 V DC reverse voltage specification with matching 10 A current rating and 800 mV forward voltage drop. These parts are interchangeable in applications where the 90 V rating is a design requirement.

Voltage-Upgraded Substitutes (Higher Voltage Rating): Parts rated for 100 V DC reverse voltage with 10 A current rating. These substitutes provide higher voltage margin and are suitable for applications where the circuit design permits operation at elevated voltage ratings without performance degradation.

Substitution eligibility is determined by the following parameters:

Voltage - DC Reverse (Vr) (Max): 90 V or higher
Current - Average Rectified (Io): 10 A minimum
Voltage - Forward (Vf) (Max) @ If: 800 mV or lower @ 10 A
Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 or compatible variant
Technology: Schottky

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ 10A [mV]	Ir @ Vr [µA]	Package	Tj (°C)	Status
MBR1090G	onsemi	90	10	800	100 @ 90V	TO-220-2	-65 ~ 175	Obsolete
MBR1090-E3/4W	Vishay General Semiconductor - Diodes Division	90	10	800	100 @ 90V	TO-220-2	-65 ~ 150	Active
MBR1090-M3/4W	Vishay General Semiconductor - Diodes Division	90	10	800	100 @ 90V	TO-220-2	-65 ~ 150	Active
MBR1090_T0_00001	Panjit International Inc.	90	10	800	50 @ 90V	TO-220-2	-65 ~ 175	Active
MBR10100	Taiwan Semiconductor Corporation	100	10	850	100 @ 100V	TO-220-2	-55 ~ 150	Active
MBR10100F-BP	Micro Commercial Co	100	10	850	500 @ 100V	TO-220-2 Isolated Tab	-50 ~ 150	Active

Engineering Selection Recommendations

Direct Equivalent Selection (90 V Rating):

The MBR1090-E3/4W and MBR1090-M3/4W from Vishay General Semiconductor - Diodes Division are direct electrical equivalents to the MBR1090G. Both parts maintain identical voltage, current, and forward voltage specifications. Both are ROHS3 compliant and REACH unaffected. These parts are recommended as primary replacements for applications where the 90 V rating is specified and the operating temperature range does not exceed 150°C.

The MBR1090_T0_00001 from Panjit International Inc. is a parametric equivalent with identical voltage and current ratings. This part features lower reverse leakage current (50 µA versus 100 µA) and extends the maximum junction temperature to 175°C, matching the original MBR1090G specification. This part is suitable for applications requiring extended temperature operation or lower leakage characteristics.

Voltage-Upgraded Substitute Selection (100 V Rating):

The MBR10100 from Taiwan Semiconductor Corporation provides a 100 V rated alternative with identical 10 A current capacity. Forward voltage is specified at 850 mV, representing a 50 mV increase over the MBR1090G. This part is ROHS3 compliant and REACH unaffected. The operating temperature range is -55°C to 150°C.

The MBR10100F-BP from Micro Commercial Co is rated for 100 V with 10 A current and features an isolated tab package variant (ITO-220AC). This part exhibits higher reverse leakage current (500 µA) and a reduced maximum junction temperature of 150°C. Selection of this part requires confirmation that the isolated tab configuration is compatible with the circuit board layout and thermal management design.

All substitute parts are active products with current manufacturing status and established supply chains.

Frequently Asked Questions (FAQ)

Q: Can the MBR1090G be directly replaced with a 100 V rated part such as MBR10100?

A: Yes. The MBR10100 maintains the required 10 A current rating and fast recovery speed. The 100 V rating provides additional voltage margin and is compatible with applications designed for 90 V operation. The forward voltage increases from 800 mV to 850 mV, which may require verification in circuits with tight voltage drop budgets.

Q: What is the difference between MBR1090-E3/4W and MBR1090-M3/4W?

A: Both parts are manufactured by Vishay and share identical electrical specifications: 90 V rating, 10 A current, 800 mV forward voltage, and 100 µA reverse leakage. The designations E3/4W and M3/4W represent different manufacturing codes or tape/reel configurations. Both are active products suitable for direct substitution.

Q: Why does MBR1090_T0_00001 have lower reverse leakage current?

A: The MBR1090_T0_00001 from Panjit International Inc. is specified with 50 µA reverse leakage at 90 V, compared to 100 µA for the original MBR1090G. This represents improved leakage performance from the Panjit device and may provide benefits in low-power or high-impedance circuit applications.

Q: Is the MBR10100F-BP with isolated tab compatible with standard TO-220-2 footprints?

A: The MBR10100F-BP uses an ITO-220AC package with an isolated tab configuration. While the pin pitch and overall dimensions are compatible with TO-220-2 footprints, the isolated tab design requires verification that the circuit board layout does not rely on tab-to-case electrical connection. Isolated tab packages are used in applications requiring electrical isolation between the tab and the semiconductor junction.

Q: What is the impact of the 50 mV forward voltage increase in MBR10100 compared to MBR1090G?

A: The MBR10100 forward voltage is specified at 850 mV versus 800 mV for the MBR1090G at 10 A. This 50 mV increase represents approximately 6% higher voltage drop. In high-current applications or circuits with tight voltage budgets, this difference may require recalculation of power dissipation and thermal management. In most general-purpose rectification applications, this difference is negligible.

Q: Are all substitute parts RoHS3 compliant?

A: The MBR1090-E3/4W, MBR1090-M3/4W, and MBR1090_T0_00001 are explicitly specified as ROHS3 compliant. The MBR10100 and MBR10100F-BP do not include RoHS status in the provided specifications. Confirmation of RoHS compliance for these parts should be obtained from the respective manufacturers if regulatory compliance is required.

Q: What is the maximum junction temperature difference between substitute options?

A: The MBR1090G and MBR1090_T0_00001 both support -65°C to 175°C operation. The MBR1090-E3/4W and MBR1090-M3/4W are rated to -65°C to 150°C, representing a 25°C reduction in maximum temperature. The MBR10100 and MBR10100F-BP are rated to -55°C to 150°C, representing both a 10°C increase in minimum temperature and 25°C reduction in maximum temperature. Applications requiring full -65°C to 175°C operation must use MBR1090_T0_00001.

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