MBR10200CT Equivalent & Substitute Parts

Part Overview

The MBR10200CT is a Schottky diode array in a 1 Pair Common Cathode configuration manufactured by Diodes Incorporated. This component is rated for 200 V DC reverse voltage with 5 A average rectified current per diode and features fast recovery characteristics suitable for high-frequency switching applications. The part is currently classified as Obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and procurement needs.

Substiute Parts

MBR10200CT

Diodes IncorporatedIn Stock: 45215MBR10200CT Datasheet

Current PartRFQ

MBR10200CT

Taiwan Semiconductor CorporationIn Stock: 45214MBR10200CT Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MBR10200CT is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

• Diode Configuration: 1 Pair Common Cathode
• Technology: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Mounting Type: Through Hole
• Package / Case: TO-220-3

Allowable Parameter Variations:

• Current - Average Rectified (Io) (per Diode): Equal to or greater than 5 A
• Voltage - Forward (Vf) (Max) @ If: Equal to or less than 910 mV at rated current
• Operating Temperature - Junction: Equal to or greater than -55°C to 175°C range
• Current - Reverse Leakage @ Vr: Equal to or less than 100 µA @ 200 V

The MBR10200CT manufactured by Taiwan Semiconductor Corporation meets all mandatory matching parameters and demonstrates acceptable parameter variations, qualifying it as a direct substitute.

Parameter Comparison

Engineering Selection Recommendations

The MBR10200CT manufactured by Taiwan Semiconductor Corporation is qualified as a direct substitute for the obsolete Diodes Incorporated MBR10200CT. Both components maintain identical part numbering and share the same TO-220-3 package configuration, ensuring mechanical and electrical compatibility in existing circuit designs.

The Taiwan Semiconductor variant demonstrates superior current handling capability at 10 A per diode compared to the original 5 A specification, providing enhanced performance margin in applications operating at or below the original design current. Both components maintain ROHS3 compliance and identical reverse leakage characteristics.

The Taiwan Semiconductor version operates across a maximum junction temperature range of -55°C to 150°C, which is 25°C lower than the original specification of -55°C to 175°C. Applications requiring operation above 150°C junction temperature require thermal analysis to confirm compatibility.

Both components are classified as RoHS3 compliant with MSL rating of 1 (Unlimited), ensuring equivalent environmental and moisture handling requirements.

Frequently Asked Questions (FAQ)

Q: Can the Taiwan Semiconductor MBR10200CT directly replace the Diodes Incorporated MBR10200CT in existing designs?

A: Yes. Both components share identical part numbers, diode configurations, voltage ratings, and TO-220-3 package specifications. Mechanical and electrical compatibility is maintained for direct substitution in existing circuit layouts.

Q: What is the significance of the higher current rating (10 A vs. 5 A) in the Taiwan Semiconductor variant?

A: The Taiwan Semiconductor version is rated for 10 A average rectified current per diode, compared to 5 A in the original. This higher rating provides additional current capacity and thermal margin. Applications designed for 5 A operation remain fully compatible and benefit from reduced thermal stress.

Q: Are there temperature range differences between the two versions?

A: The Taiwan Semiconductor variant operates across -55°C to 150°C junction temperature, while the original Diodes Incorporated part operates to 175°C. Applications requiring sustained operation above 150°C junction temperature require verification that thermal design maintains junction temperature within the Taiwan Semiconductor specification.

Q: Do both components meet the same compliance standards?

A: Yes. Both the Diodes Incorporated and Taiwan Semiconductor versions are ROHS3 compliant with MSL rating of 1 (Unlimited). Moisture sensitivity and environmental compliance requirements are identical.

Q: What is the forward voltage difference between the two parts?

A: The Taiwan Semiconductor version specifies 980 mV maximum forward voltage at 10 A, compared to 910 mV at 5 A for the original. Forward voltage characteristics are measured at their respective rated currents and reflect normal variation across different manufacturing processes. At the original 5 A design current, the Taiwan Semiconductor variant operates within acceptable parameters for equivalent circuit performance.

Q: Is the TO-220-3 package identical between both manufacturers?

A: Yes. Both components utilize the TO-220-3 through-hole package configuration. Mechanical dimensions, lead spacing, and mounting requirements are identical, ensuring compatibility with existing PCB layouts and thermal management solutions.