MBR10100CT Equivalent & Substitute Parts

Part Overview

The MBR10100CT is a Schottky diode array with 1 pair common cathode configuration rated for 100 V DC reverse voltage and 10 A average rectified current per diode. Manufactured by Taiwan Semiconductor Corporation, this component is packaged in TO-220-3 through-hole format and features fast recovery characteristics with a maximum forward voltage of 950 mV at 10 A.

The MBR10100CT is discontinued at DiGi Electronics. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

MBR10100CT
Taiwan Semiconductor CorporationIn Stock: 55157MBR10100CT Datasheet
MBR10100CT
Current Part
MBR10100CT
Taiwan Semiconductor CorporationIn Stock: 55157MBR10100CT Datasheet
MBR10100CT
Direct
MBR10100CTP
Diodes IncorporatedIn Stock: 2265MBR10100CTP Datasheet
MBR10100CTP
Direct
SBR10100CT
Diodes IncorporatedIn Stock: 18358SBR10100CT Datasheet
SBR10100CT
Direct
MBR10100CT-BP
Micro Commercial CoIn Stock: 5907MBR10100CT-BP Datasheet
MBR10100CT-BP
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MBR10100CT-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 3178MBR10100CT-E3/4W Datasheet
MBR10100CT-E3/4W
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MBR10100CT-G1
Diodes IncorporatedIn Stock: 1219MBR10100CT-G1 Datasheet
MBR10100CT-G1
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MBR10H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 3669MBR10H100CT-E3/45 Datasheet
MBR10H100CT-E3/45
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MBR20100CT-BP
Micro Commercial CoIn Stock: 5084MBR20100CT-BP Datasheet
MBR20100CT-BP
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MBR20100CT-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 8817MBR20100CT-E3/4W Datasheet
MBR20100CT-E3/4W
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MBR20100CT-G1
Diodes IncorporatedIn Stock: 1781MBR20100CT-G1 Datasheet
MBR20100CT-G1
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MBR20100CT-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 2244MBR20100CT-M3/4W Datasheet
MBR20100CT-M3/4W
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MBR20H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1625MBR20H100CT-E3/45 Datasheet
MBR20H100CT-E3/45
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MBR20H100CTG-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1260MBR20H100CTG-E3/45 Datasheet
MBR20H100CTG-E3/45
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MBR30100CT-G1
Diodes IncorporatedIn Stock: 1064MBR30100CT-G1 Datasheet
MBR30100CT-G1
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MBR30H100CT-E3/45
Vishay General Semiconductor - Diodes DivisionIn Stock: 1669MBR30H100CT-E3/45 Datasheet
MBR30H100CT-E3/45
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MBRB41H100CT-1G
Fairchild SemiconductorIn Stock: 2857MBRB41H100CT-1G Datasheet
MBRB41H100CT-1G
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NTSV20100CTG
onsemiIn Stock: 1487NTSV20100CTG Datasheet
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SDT20100CT
Diodes IncorporatedIn Stock: 1338SDT20100CT Datasheet
SDT20100CT
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V20100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 8760V20100C-E3/4W Datasheet
V20100C-E3/4W
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V20100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 20261V20100C-M3/4W Datasheet
V20100C-M3/4W
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V20100R-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1326V20100R-E3/4W Datasheet
V20100R-E3/4W
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V20M100M-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 112127V20M100M-E3/4W Datasheet
V20M100M-E3/4W
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V30100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 6167V30100C-E3/4W Datasheet
V30100C-E3/4W
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V30100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 4971V30100C-M3/4W Datasheet
V30100C-M3/4W
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V40100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 90547V40100C-E3/4W Datasheet
V40100C-E3/4W
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V40100G-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1184V40100G-E3/4W Datasheet
V40100G-E3/4W
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V40100G-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1034V40100G-M3/4W Datasheet
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V40100K-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 1004V40100K-E3/4W Datasheet
V40100K-E3/4W
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V60100C-E3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 44133V60100C-E3/4W Datasheet
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V60100C-M3/4W
Vishay General Semiconductor - Diodes DivisionIn Stock: 10296V60100C-M3/4W Datasheet
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VS-43CTQ100HN3
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FYP1010DNTU
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WNS20S100CQ
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Parametric Equivalent

Key Parameters

Parameter Value
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) (per Diode) 10 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 10 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 100 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MBR10100CT is determined by the following critical parameters:

Primary Substitution Criteria:

  • Diode Configuration: 1 Pair Common Cathode
  • Technology: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 10 A
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3

Secondary Compatibility Parameters:

  • Voltage - Forward (Vf) (Max) @ If
  • Current - Reverse Leakage @ Vr
  • Operating Temperature - Junction
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)

Substitute parts are grouped into two categories:

Direct Equivalents (10 A Rating): Parts meeting all primary substitution criteria with 10 A current rating. These include MBR10100CT-BP and MBR20100CT-E3/4W, which maintain identical voltage and current specifications.

Functional Alternatives (5 A Rating): Parts with reduced current rating (5 A) but identical voltage rating and package configuration. These include MBR10100CTP, SBR10100CT, MBR10100CT-E3/4W, MBR10100CT-G1, and MBR10H100CT-E3/45. These alternatives are suitable for applications where the 10 A rating is not fully utilized.

Parameter Comparison

Part Number Manufacturer Diode Config Technology Vr (Max) Io (per Diode) Vf (Max) @ If Vr Leakage Tj (Operating) Package Status
MBR10100CT Taiwan Semiconductor Corporation 1 Pair Common Cathode Schottky 100 V 10 A 950 mV @ 10 A 100 µA @ 100 V -55°C ~ 150°C TO-220-3 Discontinued
MBR10100CT-BP Micro Commercial Co 1 Pair Common Cathode Schottky 100 V 10 A 850 mV @ 5 A 200 µA @ 100 V -55°C ~ 150°C TO-220-3 Active
MBR10100CTP Diodes Incorporated 1 Pair Common Cathode Schottky 100 V 5 A 850 mV @ 5 A 100 µA @ 100 V -65°C ~ 175°C TO-220-3 Isolated Tab Obsolete
SBR10100CT Diodes Incorporated 1 Pair Common Cathode Super Barrier 100 V 5 A 800 mV @ 5 A 100 µA @ 100 V -65°C ~ 150°C TO-220-3 Active
MBR10100CT-E3/4W Vishay General Semiconductor - Diodes Division 1 Pair Common Cathode Schottky 100 V 5 A 850 mV @ 5 A 100 µA @ 100 V -65°C ~ 150°C TO-220-3 Active
MBR10100CT-G1 Diodes Incorporated 1 Pair Common Cathode Schottky 100 V 5 A 840 mV @ 5 A 50 µA @ 100 V -55°C ~ 150°C TO-220-3 Active
MBR10H100CT-E3/45 Vishay General Semiconductor - Diodes Division 1 Pair Common Cathode Schottky 100 V 5 A 760 mV @ 5 A 3.5 µA @ 100 V -65°C ~ 175°C TO-220-3 Active
MBR20100CT-BP Micro Commercial Co 1 Pair Common Cathode Schottky 100 V 10 A 950 mV @ 20 A 150 µA @ 100 V -55°C ~ 150°C TO-220-3 Active
MBR20100CT-E3/4W Vishay General Semiconductor - Diodes Division 1 Pair Common Cathode Schottky 100 V 10 A 800 mV @ 10 A 100 µA @ 100 V -65°C ~ 150°C TO-220-3 Active
MBR20100CT-G1 Diodes Incorporated 1 Pair Common Cathode Schottky 100 V 10 A 840 mV @ 10 A 50 µA @ 100 V -55°C ~ 175°C TO-220-3 Active

Engineering Selection Recommendations

For Direct Current Rating Replacement (10 A):

MBR10100CT-BP (Micro Commercial Co) is an active direct equivalent with identical 10 A current rating, 100 V voltage rating, and TO-220-3 package. This part maintains full compatibility with the original MBR10100CT specification and is currently in stock.

MBR20100CT-E3/4W (Vishay General Semiconductor - Diodes Division, TMBS® series) provides 10 A current rating with improved forward voltage characteristics (800 mV @ 10 A versus 950 mV @ 10 A). Extended operating temperature range (-65°C ~ 150°C) and active product status support long-term availability.

MBR20100CT-G1 (Diodes Incorporated) offers 10 A current rating with automotive-grade qualification (AEC-Q101) and reduced reverse leakage (50 µA @ 100 V). Extended operating temperature range (-55°C ~ 175°C) and active status ensure sustained supply.

For Reduced Current Applications (5 A):

SBR10100CT (Diodes Incorporated, Super Barrier technology) provides 5 A current rating with superior forward voltage performance (800 mV @ 5 A). Active product status and extended temperature range (-65°C ~ 150°C) support reliability requirements.

MBR10100CT-E3/4W (Vishay General Semiconductor - Diodes Division, TMBS® series) delivers 5 A current rating with extended operating temperature (-65°C ~ 150°C) and active availability.

MBR10H100CT-E3/45 (Vishay General Semiconductor - Diodes Division) provides 5 A current rating with lowest reverse leakage (3.5 µA @ 100 V) and extended temperature range (-65°C ~ 175°C), suitable for precision applications.

All recommended substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating consistent with the original part.

Frequently Asked Questions (FAQ)

Q: Can MBR10100CT-BP be used as a direct replacement for MBR10100CT?

A: Yes. MBR10100CT-BP maintains identical diode configuration (1 Pair Common Cathode), technology (Schottky), voltage rating (100 V), current rating (10 A), and package (TO-220-3). Both parts are ROHS3 compliant with MSL 1 rating. MBR10100CT-BP is currently active and in stock.

Q: What is the difference between 10 A and 5 A rated substitutes?

A: The 10 A rated substitutes (MBR10100CT-BP, MBR20100CT-E3/4W, MBR20100CT-G1) maintain the original current capacity and are suitable for applications requiring full 10 A operation. The 5 A rated substitutes (SBR10100CT, MBR10100CT-E3/4W, MBR10100CT-G1, MBR10H100CT-E3/45) are suitable only for applications where peak current does not exceed 5 A per diode.

Q: Are there package differences between substitutes?

A: Most substitutes use standard TO-220-3 package. MBR10100CTP uses TO-220-3 Isolated Tab variant. Verify PCB layout compatibility before selection. All other substitutes use standard TO-220-3 through-hole configuration matching the original MBR10100CT.

Q: What is the significance of forward voltage differences among substitutes?

A: Forward voltage (Vf) affects power dissipation and thermal performance. Lower Vf values (e.g., MBR10H100CT-E3/45 at 760 mV @ 5 A) reduce heat generation. Higher Vf values (e.g., MBR10100CT at 950 mV @ 10 A) increase power loss. Select based on thermal budget and efficiency requirements of the application.

Q: Which substitutes have automotive qualification?

A: MBR10100CT-G1 and MBR20100CT-G1 carry AEC-Q101 automotive qualification. These parts are suitable for automotive and industrial applications requiring formal qualification documentation.

Q: What is the difference between Schottky and Super Barrier technology?

A: SBR10100CT uses Super Barrier technology, which typically provides lower forward voltage and reduced reverse leakage compared to standard Schottky diodes. This results in improved efficiency and lower thermal dissipation.

Q: Can I use a 5 A rated part in a 10 A application?

A: No. Using a 5 A rated part in a 10 A application exceeds the component's current rating and will result in excessive heat generation, reduced reliability, and potential component failure. Current rating must match or exceed application requirements.

Q: What is the impact of reverse leakage current differences?

A: Reverse leakage current affects standby power consumption and thermal performance. Lower leakage (e.g., MBR10H100CT-E3/45 at 3.5 µA @ 100 V) reduces standby power loss. Higher leakage (e.g., MBR10100CT-BP at 200 µA @ 100 V) increases standby dissipation. Select based on application duty cycle and thermal constraints.

Q: Are all substitutes ROHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original MBR10100CT environmental compliance profile.

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