MBR10100 Equivalent & Substitute Parts

Part Overview

The MBR10100 is a Schottky rectifier diode rated for 100 V DC reverse voltage and 10 A average rectified current in a TO-220-2 through-hole package. The original onsemi MBR10100 is classified as obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production builds and field replacements. Alternative sources from active manufacturers provide functionally compatible solutions with identical or superior electrical characteristics.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	10	A
Voltage - Forward (Vf) (Max) @ If	800	mV @ 10 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	100	µA @ 100 V
Mounting Type	Through Hole	—
Package / Case	TO-220-2	—
Operating Temperature - Junction	-65 to 175	°C
Technology	Schottky	—

Substitute Part Grouping Explanation

Substitute parts for the MBR10100 are classified into three categories based on electrical and mechanical compatibility:

Direct Equivalents (Identical Ratings): Parts with 100 V reverse voltage, 10 A average rectified current, TO-220-2 package, and fast recovery Schottky technology. These parts maintain all critical electrical parameters within the same tolerance band and are pin-compatible replacements.

Higher Current Rated Substitutes (Uprated Current): Parts rated for 16 A average rectified current at 100 V reverse voltage. These provide superior current handling capability while maintaining voltage rating and package form factor. Uprated parts are suitable for applications where additional current margin is beneficial.

Parametric Variants (Minor Specification Differences): Parts with identical voltage and current ratings but variations in forward voltage drop, reverse leakage current, or operating temperature range. These parts function within the same application envelope but exhibit different thermal or leakage characteristics.

Substitution eligibility is determined by the following criteria:

Voltage - DC Reverse (Vr) (Max): 100 V minimum
Current - Average Rectified (Io): 10 A minimum
Mounting Type: Through Hole
Package / Case: TO-220-2 or compatible variant
Technology: Schottky
Speed: Fast Recovery ≤ 500ns, > 200mA (Io)

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [mV]	Ir @ Vr [µA]	Tj (Max) [°C]	Product Status	RoHS Status
MBR10100	onsemi	100	10	800 @ 10 A	100 @ 100 V	175	Obsolete	Non-compliant
MBR10100G	onsemi	100	10	800 @ 10 A	100 @ 100 V	175	Active	ROHS3 Compliant
MBR10100	Taiwan Semiconductor Corporation	100	10	850 @ 10 A	100 @ 100 V	150	Active	ROHS3 Compliant
MBR10100-M3/4W	Vishay General Semiconductor - Diodes Division	100	10	800 @ 10 A	100 @ 100 V	150	Active	ROHS3 Compliant
MBR10100-BP	Micro Commercial Co	100	10	—	150 @ 100 V	150	Active	—
MBR10100F-BP	Micro Commercial Co	100	10	850 @ 10 A	500 @ 100 V	150	Active	—
MBR10100_T0_00001	Panjit International Inc.	100	10	800 @ 10 A	50 @ 100 V	175	Active	ROHS3 Compliant
DSS16-01A	IXYS	100	16	790 @ 15 A	500 @ 100 V	175	Active	ROHS3 Compliant
SRA16100HC0G	Taiwan Semiconductor Corporation	100	16	920 @ 16 A	100 @ 100 V	150	Active	ROHS3 Compliant
STPS8H100D	STMicroelectronics	100	8	710 @ 8 A	4.5 @ 100 V	175	Active	ROHS3 Compliant

Engineering Selection Recommendations

Primary Direct Equivalent: MBR10100G (onsemi) is the recommended direct replacement for the obsolete MBR10100. This part maintains identical electrical specifications (100 V, 10 A, 800 mV forward voltage) and operating temperature range to 175°C. MBR10100G carries active product status and ROHS3 compliance, ensuring long-term availability and regulatory conformance.

Alternative Direct Equivalent: MBR10100_T0_00001 (Panjit International Inc.) provides parametric equivalence with identical voltage, current, and forward voltage ratings. This part offers superior reverse leakage performance (50 µA versus 100 µA) and extends to 175°C maximum junction temperature. ROHS3 compliance and active product status support production continuity.

Vishay Source: MBR10100-M3/4W (Vishay General Semiconductor - Diodes Division) delivers direct electrical equivalence with 100 V, 10 A, and 800 mV forward voltage specifications. Operating temperature extends to 150°C. ROHS3 compliance and active status provide supply chain stability.

Taiwan Semiconductor Corporation Source: MBR10100 (Taiwan Semiconductor Corporation) offers 100 V, 10 A ratings with 850 mV forward voltage and active product status. Operating temperature is limited to 150°C. ROHS3 compliance supports regulatory requirements.

Higher Current Alternatives: DSS16-01A (IXYS) and SRA16100HC0G (Taiwan Semiconductor Corporation) provide 16 A current ratings at 100 V, suitable for applications requiring additional current margin. Both maintain TO-220-2 package compatibility and fast recovery Schottky technology. SRA16100HC0G includes AEC-Q101 automotive qualification.

Lower Current Alternative: STPS8H100D (STMicroelectronics) is suitable for applications with reduced current requirements. This 8 A rated part offers superior reverse leakage performance (4.5 µA) and lower forward voltage drop (710 mV @ 8 A), extending to 175°C maximum junction temperature.

Frequently Asked Questions (FAQ)

Q: Can MBR10100G directly replace the obsolete onsemi MBR10100?

A: Yes. MBR10100G is a direct replacement with identical electrical specifications: 100 V reverse voltage, 10 A average rectified current, 800 mV forward voltage at 10 A, and -65°C to 175°C operating temperature range. Pin configuration and TO-220-2 package are identical. MBR10100G carries active product status and ROHS3 compliance.

Q: What is the difference between MBR10100-M3/4W and MBR10100G?

A: Both parts meet the core electrical requirements of 100 V, 10 A, and 800 mV forward voltage. MBR10100-M3/4W is manufactured by Vishay and operates to 150°C maximum junction temperature. MBR10100G is manufactured by onsemi and operates to 175°C. Selection depends on thermal design requirements and preferred supplier.

Q: Can I use a 16 A rated part (DSS16-01A or SRA16100HC0G) in place of the 10 A MBR10100?

A: Yes. Higher current rated parts are suitable substitutes for lower current applications. DSS16-01A and SRA16100HC0G both maintain 100 V reverse voltage and TO-220-2 package compatibility. The 16 A rating provides additional current margin without affecting circuit operation at 10 A or below. Verify thermal dissipation characteristics for your specific application.

Q: What is the difference between standard TO-220-2 and ITO-220AC packages?

A: MBR10100F-BP uses an isolated tab (ITO-220AC) variant, where the tab is electrically isolated from the cathode. Standard TO-220-2 packages have the tab connected to the cathode. Verify your PCB design and thermal management approach before selecting the isolated variant.

Q: Does MBR10100_T0_00001 offer any performance advantage over MBR10100G?

A: MBR10100_T0_00001 exhibits lower reverse leakage current (50 µA versus 100 µA at 100 V) and extends to 175°C maximum junction temperature, matching the original onsemi specification. Forward voltage and current ratings are identical. The lower leakage may provide marginal benefits in low-power standby applications.

Q: Are all substitute parts ROHS3 compliant?

A: Most active substitute parts carry ROHS3 compliance. MBR10100-BP and MBR10100F-BP (Micro Commercial Co) do not specify RoHS status in available documentation. Verify compliance requirements for your application before final part selection.

Q: What is the significance of fast recovery speed (≤ 500ns)?

A: Fast recovery Schottky diodes switch off rapidly, minimizing reverse recovery charge and reducing switching losses in power conversion circuits. All listed substitute parts maintain the ≤ 500ns recovery specification, ensuring compatibility with switching power supply designs.

Q: Can STPS8H100D be used if my circuit only requires 8 A?

A: Yes. STPS8H100D is suitable for applications with maximum current requirements of 8 A or less. This part offers superior reverse leakage performance (4.5 µA) and lower forward voltage drop (710 mV @ 8 A) compared to the 10 A rated alternatives, potentially reducing thermal dissipation.

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