MBD330DWT1 Equivalent & Substitute Parts

Part Overview

The MBD330DWT1 is a dual independent Schottky diode in SC-88/SOT-363 packaging, rated for 30V peak reverse voltage with 120mW power dissipation. This component is classified as obsolete, making equivalent substitutes necessary for new designs and ongoing production requirements. The part operates across the industrial temperature range of -55°C to 125°C and is suitable for RF and high-frequency switching applications requiring low capacitance characteristics.

Substiute Parts

MBD330DWT1
onsemiIn Stock: 4296MBD330DWT1 Datasheet
MBD330DWT1
Current Part
MBD330DWT1G
onsemiIn Stock: 7648MBD330DWT1G Datasheet
MBD330DWT1G
Direct
BAT754L,115
Nexperia USA Inc.In Stock: 13140BAT754L,115 Datasheet
BAT754L,115
Similar

Key Parameters

Parameter Value
Diode Type Schottky - 2 Independent
Voltage - Peak Reverse (Max) 30V
Capacitance @ Vr, F 1.5pF @ 15V, 1MHz
Power Dissipation (Max) 120 mW
Operating Temperature -55°C ~ 125°C (TJ)
Package / Case 6-TSSOP, SC-88, SOT-363
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the MBD330DWT1 is determined by the following critical parameters:

  • Peak reverse voltage rating of 30V or higher
  • Package compatibility: 6-TSSOP, SC-88, or SOT-363
  • Operating temperature range encompassing -55°C to 125°C
  • Schottky diode technology with low capacitance characteristics
  • Power dissipation capability of 120mW or greater

Two substitute categories are identified:

Direct Substitute (Packaging Variant): MBD330DWT1G maintains identical electrical specifications and differs only in packaging format (Tape & Reel vs. bulk), with the advantage of active product status and RoHS3 compliance.

Similar Substitute (Configuration Variant): BAT754L,115 provides equivalent voltage and package specifications but differs in diode configuration (3 independent vs. 2 independent) and current rating (200mA vs. the original's lower current specification). This part is suitable where the additional diode and higher current capacity do not conflict with circuit requirements.

Parameter Comparison

Parameter MBD330DWT1 MBD330DWT1G BAT754L,115
Manufacturer onsemi onsemi Nexperia USA Inc.
Diode Type Schottky - 2 Independent Schottky - 2 Independent Schottky - 3 Independent
Voltage - Peak Reverse (Max) 30V 30V 30V
Capacitance @ Vr, F 1.5pF @ 15V, 1MHz 1.5pF @ 15V, 1MHz Not specified
Power Dissipation (Max) 120 mW 120 mW Not specified
Operating Temperature -55°C ~ 125°C (TJ) -55°C ~ 125°C (TJ) 125°C (Max)
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

MBD330DWT1G is the primary substitute for the obsolete MBD330DWT1. Both parts are manufactured by onsemi with identical electrical and thermal specifications. The MBD330DWT1G offers the advantage of active product status, ensuring long-term availability and supply chain stability. Additionally, MBD330DWT1G achieves ROHS3 compliance, addressing regulatory requirements for new designs and manufacturing environments with RoHS mandates.

BAT754L,115 serves as an alternative where the additional diode configuration (3 independent vs. 2 independent) and higher current rating (200mA per diode) are compatible with circuit requirements. This Nexperia part maintains the 30V voltage rating and 6-TSSOP package footprint. BAT754L,115 includes AEC-Q100 automotive qualification and ROHS3 compliance. Selection of this part requires verification that the circuit design accommodates the three-diode configuration and does not depend on the specific two-diode topology of the original MBD330DWT1.

Frequently Asked Questions (FAQ)

Q: Can MBD330DWT1G be used as a direct replacement for MBD330DWT1?

A: Yes. MBD330DWT1G is electrically and thermally identical to MBD330DWT1, differing only in packaging format (Tape & Reel vs. bulk). Both parts share the same base product number (MBD33/MBD330) and specifications. The primary advantage of MBD330DWT1G is active product status and RoHS3 compliance.

Q: What is the key difference between MBD330DWT1 and BAT754L,115?

A: The primary difference is diode configuration. MBD330DWT1 contains 2 independent Schottky diodes, while BAT754L,115 contains 3 independent Schottky diodes. Both maintain 30V peak reverse voltage and 6-TSSOP packaging. BAT754L,115 also specifies a higher current rating of 200mA per diode. Substitution requires confirmation that the circuit design is compatible with the three-diode configuration.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. MBD330DWT1, MBD330DWT1G, and BAT754L,115 all use the 6-TSSOP, SC-88, SOT-363 package, ensuring mechanical and electrical compatibility at the PCB level. Pin assignments must be verified against individual datasheets to confirm functional compatibility.

Q: What are the compliance differences between the main part and substitutes?

A: MBD330DWT1 is RoHS non-compliant. Both MBD330DWT1G and BAT754L,115 are ROHS3 compliant. All three parts are REACH unaffected and classified under ECCN EAR99. For applications requiring RoHS compliance, MBD330DWT1G or BAT754L,115 must be selected.

Q: Is BAT754L,115 suitable for RF applications requiring low capacitance?

A: BAT754L,115 capacitance specifications are not provided in the available data. For RF applications where the 1.5pF @ 15V, 1MHz specification of MBD330DWT1 is critical, MBD330DWT1G is the recommended substitute. BAT754L,115 substitution requires capacitance verification against application requirements.

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