MAX2601ESA-T Equivalent & Substitute Parts

Part Overview

The MAX2601ESA-T is an RF Transistor NPN manufactured by Analog Devices Inc./Maxim Integrated, designed for RF applications requiring 15V collector-emitter breakdown voltage and 1GHz transition frequency. This device operates at a maximum junction temperature of 150°C and delivers 6.4W power dissipation in a surface mount 8-SOIC-EP package with exposed pad.

The MAX2601ESA-T is classified as Obsolete. Equivalent and substitute parts are necessary for ongoing production support, design flexibility, and supply chain continuity. Substitute parts must maintain compatibility with the electrical specifications and mechanical mounting requirements of the original design.

Substiute Parts

MAX2601ESA-T
Analog Devices Inc./Maxim IntegratedIn Stock: 1153MAX2601ESA-T Datasheet
MAX2601ESA-T
Current Part
MAX2601ESA+T
Analog Devices Inc./Maxim IntegratedIn Stock: 944MAX2601ESA+T Datasheet
MAX2601ESA+T
Direct
2SC5087R(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 41762SC5087R(TE85L,F) Datasheet
2SC5087R(TE85L,F)
MFR Recommended
BFP196E6327HTSA1
Infineon TechnologiesIn Stock: 14347BFP196E6327HTSA1 Datasheet
BFP196E6327HTSA1
MFR Recommended
BFP540FESDH6327XTSA1
Infineon TechnologiesIn Stock: 3342BFP540FESDH6327XTSA1 Datasheet
BFP540FESDH6327XTSA1
MFR Recommended
BFP843H6327XTSA1
Infineon TechnologiesIn Stock: 7041BFP843H6327XTSA1 Datasheet
BFP843H6327XTSA1
MFR Recommended
KSP10BU
Fairchild SemiconductorIn Stock: 124127KSP10BU Datasheet
KSP10BU
MFR Recommended
MCH4015-TL-H
onsemiIn Stock: 4011MCH4015-TL-H Datasheet
MCH4015-TL-H
MFR Recommended
MMBTH10-TP
Micro Commercial CoIn Stock: 4106MMBTH10-TP Datasheet
MMBTH10-TP
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15 V
Frequency - Transition 1 GHz
Noise Figure (Typ @ f) 3.3 dB @ 836 MHz dB
Gain 11.6 dB
Power - Max 6.4 W
DC Current Gain (hFE) Min @ Ic, Vce 100 @ 250mA, 3V
Current - Collector (Ic) Max 1.2 A
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MAX2601ESA-T is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): ≥ 15V
  • Frequency - Transition: ≥ 1GHz
  • Power - Max: ≥ 6.4W
  • Current - Collector (Ic) Max: ≥ 1.2A
  • Mounting Type: Surface Mount
  • Operating Temperature: ≥ 150°C (TJ)

Packaging Compatibility:

  • Primary package: 8-SOIC-EP (0.154", 3.90mm Width) with exposed pad
  • Alternative packages acceptable if electrical specifications are met and thermal performance is maintained

Compliance Requirements:

  • RoHS3 Compliant
  • MSL 1 (Unlimited)

Substitute parts are grouped into two categories:

Category 1 - Direct Equivalents (Identical Electrical & Mechanical Specifications):

  • MAX2601ESA+T: Identical specifications, Active product status, Tape & Reel packaging

Category 2 - Functional Substitutes (Meets or Exceeds Electrical Requirements): Parts that meet or exceed the critical electrical parameters but may differ in frequency response, power dissipation, or package form factor. These substitutes are suitable for applications where the design can accommodate parameter variations within the specified operating envelope.

Parameter Comparison

Part Number Manufacturer Vce Breakdown (V) Frequency (GHz) Power Max (W) Ic Max (A) Package Status
MAX2601ESA-T Analog Devices Inc./Maxim Integrated 15 1 6.4 1.2 8-SOIC-EP Obsolete
MAX2601ESA+T Analog Devices Inc./Maxim Integrated 15 1 6.4 1.2 8-SOIC-EP Active
2SC5087R(TE85L,F) Toshiba Semiconductor and Storage 12 8 0.15 0.08 SMQ Active
BFP196E6327HTSA1 Infineon Technologies 12 7.5 0.7 0.15 PG-SOT-143-3D Active
BFP540FESDH6327XTSA1 Infineon Technologies 5 30 0.25 0.08 4-TSFP Active
BFP843H6327XTSA1 Infineon Technologies 2.25 0.125 0.055 PG-SOT343-4-3 Active
KSP10BU Fairchild Semiconductor 25 0.65 0.35 TO-92-3 Active
MCH4015-TL-H onsemi 12 10 0.45 0.1 4-MCPH Active
MMBTH10-TP Micro Commercial Co 25 0.65 0.225 0.05 SOT-23 Active

Engineering Selection Recommendations

Direct Equivalent Selection:

MAX2601ESA+T is the recommended direct equivalent. This part maintains identical electrical specifications (15V Vce breakdown, 1GHz transition frequency, 6.4W power dissipation, 1.2A collector current) and identical package configuration (8-SOIC-EP). The primary difference is product status (Active vs. Obsolete) and packaging format (Tape & Reel vs. standard). This part is ROHS3 Compliant and MSL 1, matching the original specification.

Functional Substitute Selection:

Functional substitutes listed in this document do not meet all electrical requirements of the MAX2601ESA-T. Specifically:

  • 2SC5087R(TE85L,F): Vce breakdown reduced to 12V, power dissipation reduced to 150mW, collector current reduced to 80mA. Suitable only for applications with reduced voltage and current requirements.

  • BFP196E6327HTSA1: Vce breakdown reduced to 12V, power dissipation reduced to 700mW, collector current reduced to 150mA. Suitable for lower-power RF applications.

  • BFP540FESDH6327XTSA1: Vce breakdown reduced to 5V, power dissipation reduced to 250mW, collector current reduced to 80mA. Suitable only for low-voltage applications.

  • BFP843H6327XTSA1: Vce breakdown reduced to 2.25V, power dissipation reduced to 125mW, collector current reduced to 55mA. Not suitable for 15V applications.

  • KSP10BU: Through-hole package (TO-92-3), not surface mount. Vce breakdown 25V (exceeds requirement), but frequency limited to 650MHz and power dissipation 350mW. Mounting type incompatible with surface mount designs.

  • MCH4015-TL-H: Vce breakdown reduced to 12V, power dissipation reduced to 450mW, collector current reduced to 100mA. Suitable for lower-power RF applications.

  • MMBTH10-TP: Surface mount SOT-23 package, Vce breakdown 25V, but frequency limited to 650MHz and power dissipation 225mW. Not suitable for 1GHz+ applications.

Compliance Verification:

All listed parts maintain ROHS3 compliance and MSL 1 rating, ensuring environmental and moisture sensitivity compatibility with the original specification.

Frequently Asked Questions (FAQ)

Q1: Can MAX2601ESA+T be used as a direct replacement for MAX2601ESA-T?

A: Yes. MAX2601ESA+T is electrically and mechanically identical to MAX2601ESA-T. Both parts feature 15V Vce breakdown, 1GHz transition frequency, 6.4W power dissipation, 1.2A collector current, and 8-SOIC-EP packaging. The primary difference is product status (Active vs. Obsolete) and packaging format (Tape & Reel). No circuit modifications are required.

Q2: Why do the functional substitutes listed have lower electrical ratings than the MAX2601ESA-T?

A: The functional substitutes represent alternative RF transistor options available in the market. However, they do not meet all electrical requirements of the MAX2601ESA-T. These parts are included for reference only and are suitable only for applications with reduced voltage, current, or power requirements. Direct substitution is not recommended without circuit redesign.

Q3: Is KSP10BU suitable as a substitute?

A: KSP10BU is not recommended as a substitute. Although it features 25V Vce breakdown (exceeding the 15V requirement), it is a through-hole component (TO-92-3 package) incompatible with surface mount designs. Additionally, its 650MHz transition frequency is below the 1GHz requirement, and power dissipation is limited to 350mW compared to the 6.4W specification.

Q4: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1)

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