MAPRST0912-50 Equivalent & Substitute Parts

Part Overview

The MAPRST0912-50 is an RF Transistor NPN manufactured by MACOM Technology Solutions, rated for 65V collector-emitter breakdown voltage with 5.3A maximum collector current and 50W maximum power dissipation. This chassis mount device is designed for RF applications requiring high power handling in a discrete transistor format. The part maintains Active product status with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Substitute parts are identified for applications where alternative electrical specifications, packaging formats, or mounting technologies are acceptable within system design constraints.

Substiute Parts

MAPRST0912-50

MACOM Technology SolutionsIn Stock: 1130MAPRST0912-50 Datasheet

Current PartRFQ

2SC5488A-TL-H

onsemiIn Stock: 116162SC5488A-TL-H Datasheet

MFR RecommendedRFQ

BFP640ESDH6327XTSA1

Infineon TechnologiesIn Stock: 1267BFP640ESDH6327XTSA1 Datasheet

MFR RecommendedRFQ

HFA3134IHZ96

IntersilIn Stock: 19872HFA3134IHZ96 Datasheet

MFR RecommendedRFQ

NSVMMBTH10LT1G

onsemiIn Stock: 30250NSVMMBTH10LT1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution logic for the MAPRST0912-50 is based on NPN transistor type compatibility and application-specific electrical parameter alignment. The primary substitution criteria are:

Electrical Parameters for Substitution Assessment:

• Transistor Type: NPN (required match)
• Voltage Rating: Collector-Emitter Breakdown voltage must meet or exceed application requirements
• Current Handling: Collector current capacity must support circuit demands
• Power Dissipation: Maximum power rating must accommodate thermal requirements
• Frequency Response: Transition frequency determines RF performance envelope
• Gain Characteristics: dB gain specifications for signal amplification

Substitution Categories:

The four identified substitute parts represent different application scenarios:

1. 2SC5488A-TL-H (onsemi): Lower voltage (10V), lower power (100mW), higher frequency (7GHz) surface mount alternative for compact RF applications
2. BFP640ESDH6327XTSA1 (Infineon): Ultra-low voltage (4.7V), very high frequency (46GHz), minimal power (200mW) for microwave-band applications
3. HFA3134IHZ96 (Intersil): Dual NPN configuration, moderate voltage (9V), high frequency (8.5GHz), surface mount format
4. NSVMMBTH10LT1G (onsemi): Mid-range voltage (25V), moderate frequency (650MHz), low power (225mW) surface mount option

Substitution validity depends on circuit voltage rails, frequency requirements, power budget, and physical space constraints.

Parameter Comparison

Engineering Selection Recommendations

Compliance & Regulatory Status:

All identified substitute parts maintain Active product status with ROHS3 compliance, ensuring regulatory alignment with the original MAPRST0912-50. All parts carry MSL 1 (Unlimited) moisture sensitivity rating, indicating no special storage or handling requirements beyond standard component practices. REACH compliance status is confirmed for Infineon and onsemi substitute options where specified.

Selection Criteria Based on Provided Data:

1. For Direct High-Power RF Applications: The MAPRST0912-50 remains the specified choice due to its 50W power rating and 5.3A current capacity. No substitute provides equivalent power handling in the provided part list.

2. For Lower-Power RF Circuits (100mW - 225mW Range): 2SC5488A-TL-H, BFP640ESDH6327XTSA1, or NSVMMBTH10LT1G are viable based on voltage and frequency requirements. These parts support surface mount assembly versus chassis mount configuration.

3. For Voltage-Constrained Applications: NSVMMBTH10LT1G (25V rating) bridges the gap between low-voltage microwave parts and the original 65V specification, suitable for moderate-voltage RF stages.

4. For Microwave Frequency Applications (7GHz and Above): BFP640ESDH6327XTSA1 (46GHz) or 2SC5488A-TL-H (7GHz) provide transition frequencies exceeding the original part's unspecified frequency capability.

Packaging Consideration:

The original MAPRST0912-50 uses Chassis Mount packaging. All substitutes employ Surface Mount technology (SOT-23, SOT-343, 3-SSFP formats), requiring PCB layout and assembly process modifications.

Frequently Asked Questions (FAQ)

Q: Can the 2SC5488A-TL-H directly replace the MAPRST0912-50 in a high-power RF amplifier stage?

A: No. The 2SC5488A-TL-H is rated for 100mW maximum power versus the MAPRST0912-50's 50W specification. This 500:1 power ratio difference makes it unsuitable for high-power applications. The 2SC5488A-TL-H is applicable only in low-power RF signal processing stages.

Q: What is the primary limitation preventing the BFP640ESDH6327XTSA1 from substituting the MAPRST0912-50?

A: The BFP640ESDH6327XTSA1 has a 4.7V maximum collector-emitter breakdown voltage compared to the MAPRST0912-50's 65V rating. This 13.8:1 voltage difference restricts its use to low-voltage RF circuits. Additionally, its 200mW power rating is 250 times lower than the original part.

Q: Is the HFA3134IHZ96 a single transistor or dual configuration?

A: The HFA3134IHZ96 contains two NPN transistors in a single package (dual configuration). This differs from the single-transistor MAPRST0912-50. The dual structure may provide advantages in balanced amplifier or push-pull configurations but requires different circuit topology.

Q: What mounting technology change occurs when substituting from MAPRST0912-50 to surface mount alternatives?

A: The MAPRST0912-50 uses Chassis Mount technology for through-hole or direct mechanical attachment. All substitute parts employ Surface Mount technology (SMD), requiring reflow soldering to PCB pads. This necessitates changes to PCB layout, assembly equipment, and thermal management approach.

Q: Which substitute part offers the closest voltage rating to the MAPRST0912-50?

A: None of the substitutes approach the 65V rating. The NSVMMBTH10LT1G at 25V is the highest-voltage substitute, representing 38.5% of the original specification. For applications requiring voltage ratings above 25V, the MAPRST0912-50 remains the only option in the provided part list.

Q: Are all substitute parts suitable for 200°C junction temperature operation?

A: No. The MAPRST0912-50 operates to 200°C (TJ). All substitute parts are rated to 150°C maximum junction temperature, representing a 50°C reduction in thermal capability. Applications requiring operation above 150°C cannot use these substitutes.

Q: What is the frequency advantage of the BFP640ESDH6327XTSA1 over the MAPRST0912-50?

A: The BFP640ESDH6327XTSA1 specifies 46GHz transition frequency, while the MAPRST0912-50 does not provide frequency specification in the available data. The 46GHz rating indicates suitability for millimeter-wave and high-frequency microwave applications where the original part's frequency capability is unspecified.

Q: Can the NSVMMBTH10LT1G operate across the full temperature range of the MAPRST0912-50?

A: No. The NSVMMBTH10LT1G specifies -55°C to 150°C (TJ) operating range, while the MAPRST0912-50 operates to 200°C. The NSVMMBTH10LT1G cannot be used in applications requiring sustained operation above 150°C junction temperature.