MA3D756 Equivalent & Substitute Parts

Part Overview

The MA3D756 is a Schottky diode array manufactured by Panasonic Electronic Components, configured as a 1 Pair Common Cathode arrangement with a maximum reverse voltage rating of 60 V and average rectified current of 10 A per diode. The device is packaged in a TO-220-3 Full Pack through-hole configuration and features fast recovery characteristics suitable for high-frequency switching applications.

The MA3D756 is classified as an obsolete product. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades where the original part is no longer manufactured or stocked.

Key Parameters

Parameter	Value
Diode Configuration	1 Pair Common Cathode
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	60 V
Current - Average Rectified (Io) (per Diode)	10 A
Voltage - Forward (Vf) (Max) @ If	580 mV @ 5 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr	3 mA @ 60 V
Operating Temperature - Junction	-40°C ~ 125°C
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MA3D756 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V minimum
Mounting Type: Through Hole
Package / Case: TO-220-3 compatible footprint

Allowable Variation Parameters:

Current - Average Rectified (Io) (per Diode): Equal to or greater than 10 A
Voltage - Forward (Vf) (Max) @ If: Equal to or less than 580 mV @ 5 A
Current - Reverse Leakage @ Vr: Equal to or less than 3 mA @ 60 V
Operating Temperature - Junction: Maximum rating equal to or greater than 125°C

Substitute parts must maintain identical diode configuration, technology type, and reverse voltage rating. Current capacity, forward voltage, and leakage current may be improved (higher current capacity, lower forward voltage, lower leakage) without affecting circuit compatibility. Operating temperature range may be extended. Package and mounting type must remain compatible with the original TO-220-3 through-hole footprint.

Parameter Comparison

Parameter	MA3D756 (Panasonic)	RB085T-60 (Rohm)	STPS30H60CT (STMicroelectronics)
Diode Configuration	1 Pair Common Cathode	1 Pair Common Cathode	1 Pair Common Cathode
Technology	Schottky	Schottky	Schottky
Voltage - DC Reverse (Vr) (Max)	60 V	60 V	60 V
Current - Average Rectified (Io) (per Diode)	10 A	5 A	15 A
Voltage - Forward (Vf) (Max) @ If	580 mV @ 5 A	580 mV @ 5 A	660 mV @ 15 A
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Current - Reverse Leakage @ Vr	3 mA @ 60 V	300 µA @ 60 V	60 µA @ 60 V
Operating Temperature - Junction	-40°C ~ 125°C	150°C (Max)	175°C (Max)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3

Engineering Selection Recommendations

RB085T-60 (Rohm Semiconductor): The RB085T-60 is an active product with full RoHS3 compliance and REACH unaffected status. This part matches all critical parameters with the MA3D756 and provides improved reverse leakage characteristics (300 µA versus 3 mA). However, the current rating is reduced to 5 A per diode, which is 50% of the original specification. Selection of this part is appropriate only for applications where the circuit current requirement does not exceed 5 A per diode. The extended maximum junction temperature of 150°C provides thermal margin beyond the original -40°C to 125°C range.

STPS30H60CT (STMicroelectronics): The STPS30H60CT is an active product with full RoHS3 compliance and REACH unaffected status. This part matches all critical parameters and provides superior current capacity at 15 A per diode, representing a 50% increase over the MA3D756 specification. The reverse leakage is significantly improved at 60 µA. The maximum junction temperature rating of 175°C exceeds the original specification. The forward voltage at rated current is higher at 660 mV @ 15 A compared to 580 mV @ 5 A on the original part. Selection of this part is appropriate for applications requiring higher current capacity or improved thermal performance. Packaging is specified as TO-220-3 without the "Full Pack" designation; footprint compatibility with the original TO-220-3 Full Pack must be confirmed for the specific application.

Both substitute parts are currently in active production status, ensuring long-term availability and supply chain stability compared to the obsolete MA3D756.

Frequently Asked Questions (FAQ)

Q: Can the RB085T-60 be used as a direct replacement for the MA3D756?

A: The RB085T-60 is electrically compatible with the MA3D756 in terms of voltage rating, configuration, and technology. However, the current rating is reduced from 10 A to 5 A per diode. Direct replacement is possible only if the circuit current requirement does not exceed 5 A per diode. If the original design requires 10 A capacity, the RB085T-60 is not suitable.

Q: Can the STPS30H60CT be used as a direct replacement for the MA3D756?

A: The STPS30H60CT is electrically compatible with the MA3D756 and provides superior current capacity at 15 A per diode. The part is suitable for direct replacement in applications where the original 10 A capacity is required. The higher current rating provides design margin. Footprint compatibility with TO-220-3 through-hole mounting must be confirmed for the specific application.

Q: What is the significance of the "Full Pack" designation in the TO-220-3 Full Pack package?

A: The "Full Pack" designation indicates a specific variant of the TO-220-3 package. The RB085T-60 is specified as TO-220-3 Full Pack, matching the original MA3D756 package designation. The STPS30H60CT is specified as TO-220-3 without the "Full Pack" designation. Physical compatibility should be verified before selection.

Q: Why is the reverse leakage current different between the three parts?

A: Reverse leakage current is a function of semiconductor manufacturing process, die design, and material selection. The RB085T-60 and STPS30H60CT both exhibit lower reverse leakage than the MA3D756 (300 µA and 60 µA respectively, compared to 3 mA). Lower reverse leakage is a performance improvement and does not affect substitution compatibility.

Q: Are both substitute parts RoHS compliant?

A: Both the RB085T-60 and STPS30H60CT are RoHS3 compliant. The original MA3D756 does not specify RoHS status. Both substitute parts are suitable for applications requiring RoHS compliance.

Q: What is the difference between the forward voltage specifications?

A: The MA3D756 specifies 580 mV @ 5 A. The RB085T-60 specifies 580 mV @ 5 A, matching the original. The STPS30H60CT specifies 660 mV @ 15 A, which is measured at a higher current level. Forward voltage increases with current; direct comparison at different current levels is not applicable. The STPS30H60CT forward voltage at 5 A would be lower than 660 mV, but this value is not provided in the specification.

Q: Can I use the STPS30H60CT in a circuit designed for the RB085T-60?

A: The STPS30H60CT provides higher current capacity (15 A versus 5 A) and lower reverse leakage. If the circuit is designed for 5 A operation, the STPS30H60CT is compatible and provides performance margin. The higher current rating does not create incompatibility in lower-current applications.

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