Equivalent & Substitute Parts: MA2C19600E

Part Overview

The MA2C19600E is a general-purpose rectifier diode manufactured by Panasonic Electronic Components, rated for 50V DC reverse voltage and 100mA average rectified current in a DO-34 axial through-hole package. This component is classified as obsolete, necessitating identification of active substitute parts for new designs and ongoing production requirements. The small signal diode technology and standard specifications make this device suitable for general rectification applications in low-power circuits.

Substiute Parts

MA2C19600E
Panasonic Electronic ComponentsIn Stock: 1071MA2C19600E Datasheet
MA2C19600E
Current Part
1N4454TR
onsemiIn Stock: 164091N4454TR Datasheet
1N4454TR
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 100 mA
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA V
Reverse Recovery Time (trr) 200 µs
Current - Reverse Leakage @ Vr 10 nA @ 50 V
Capacitance @ Vr, F 4 pF @ 0V, 1MHz
Package / Case DO-34, Axial
Mounting Type Through Hole
Operating Temperature - Junction (Max) 200 °C
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the MA2C19600E is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain a DC reverse voltage rating of 50V or higher to ensure safe operation in the original circuit application.

Current Rating Compatibility: The substitute part must support an average rectified current rating equal to or greater than 100mA. Parts with higher current ratings remain compatible as they provide additional design margin.

Package and Mounting Compatibility: The substitute part must utilize through-hole axial mounting in either DO-34 or DO-35 package configurations to ensure mechanical fit and soldering compatibility with existing printed circuit board layouts.

Technology Classification: The substitute part must be classified as a small signal diode with standard rectifier technology to maintain functional equivalence.

Reverse Recovery Time: The substitute part's reverse recovery time must not exceed specifications that would degrade circuit performance in switching applications.

The 1N4454TR from onsemi satisfies all substitution criteria through equivalent voltage rating, higher current capacity, compatible through-hole axial packaging, and active product status.

Parameter Comparison

Parameter MA2C19600E (Panasonic) 1N4454TR (onsemi) Compatibility
Voltage - DC Reverse (Vr) (Max) 50 V 50 V Equivalent
Current - Average Rectified (Io) 100 mA 200 mA Substitute rated higher
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA 1 V @ 10 mA Substitute lower
Reverse Recovery Time (trr) 200 µs 4 ns Substitute significantly faster
Current - Reverse Leakage @ Vr 10 nA @ 50 V 100 nA @ 50 V Substitute higher leakage
Capacitance @ Vr, F 4 pF @ 0V, 1MHz 4 pF @ 0V, 1MHz Equivalent
Package / Case DO-34, Axial DO-35, Axial Compatible through-hole axial
Mounting Type Through Hole Through Hole Equivalent
Operating Temperature - Junction (Max) 200 °C 175 °C Original higher rated
Product Status Obsolete Active Substitute actively manufactured
Technology Standard Standard Equivalent

Engineering Selection Recommendations

The 1N4454TR from onsemi is a qualified substitute for the obsolete MA2C19600E based on the following engineering criteria:

Voltage and Current Ratings: The 1N4454TR maintains the 50V reverse voltage specification and exceeds the 100mA current requirement with a 200mA rating, providing additional operational margin without circuit modification.

Package Compatibility: Both devices utilize through-hole axial mounting in compatible DO-series packages (DO-34 and DO-35), permitting direct board-level substitution without layout redesign.

Active Product Status: The 1N4454TR is actively manufactured and widely available, eliminating supply chain risk associated with the obsolete MA2C19600E.

Compliance and Certifications: The 1N4454TR carries RoHS3 compliance and REACH unaffected status, meeting current regulatory requirements for electronic component procurement.

Performance Characteristics: The 1N4454TR demonstrates superior reverse recovery time (4 ns versus 200 µs), enabling improved switching performance in high-frequency applications. The lower forward voltage drop (1 V @ 10 mA) reduces power dissipation compared to the original specification.

Temperature Consideration: The MA2C19600E specifies a maximum junction temperature of 200°C, while the 1N4454TR is rated to 175°C. Circuit thermal analysis must confirm that the substitute operates within its temperature rating under maximum load conditions.

Frequently Asked Questions (FAQ)

Q: Can the 1N4454TR directly replace the MA2C19600E without circuit modification?

A: The 1N4454TR is electrically compatible for applications requiring 50V reverse voltage and up to 100mA average rectified current. The higher current rating (200mA) and improved reverse recovery time provide enhanced performance. Physical board layout compatibility exists due to compatible through-hole axial packaging. Thermal design verification is required to confirm the 175°C maximum junction temperature rating is not exceeded in the application.

Q: What are the key differences between these two diodes?

A: The primary differences are: (1) Product status—MA2C19600E is obsolete while 1N4454TR is active; (2) Current rating—1N4454TR rated for 200mA versus 100mA; (3) Reverse recovery time—1N4454TR at 4 ns versus 200 µs; (4) Forward voltage—1N4454TR lower at 1 V @ 10 mA; (5) Maximum junction temperature—MA2C19600E at 200°C versus 1N4454TR at 175°C; (6) Reverse leakage—1N4454TR higher at 100 nA versus 10 nA.

Q: Are the DO-34 and DO-35 packages interchangeable?

A: Both packages are axial through-hole configurations with compatible lead spacing and soldering characteristics. The DO-35 package used by the 1N4454TR is slightly larger than the DO-34 used by the MA2C19600E, but both fit standard through-hole PCB layouts designed for axial diodes. Physical verification of board clearance is recommended for space-constrained applications.

Q: What is the significance of the reverse recovery time difference?

A: The 1N4454TR's reverse recovery time of 4 nanoseconds is substantially faster than the MA2C19600E's 200 microseconds. This improvement reduces switching transients and enables operation at higher switching frequencies with lower noise generation. For DC rectification applications, this difference has minimal impact; for AC or switching applications, the faster recovery time of the substitute provides performance benefits.

Q: Does the higher reverse leakage current of the 1N4454TR affect circuit performance?

A: The 1N4454TR specifies 100 nanoamperes reverse leakage at 50V compared to 10 nanoamperes for the MA2C19600E. This tenfold increase remains negligible in most applications. For high-impedance circuits or precision analog applications, leakage current analysis is required to confirm acceptable performance.

Q: What compliance certifications apply to the 1N4454TR?

A: The 1N4454TR carries RoHS3 compliance certification and is REACH unaffected. These certifications confirm compliance with current environmental and hazardous substance regulations for electronic component procurement in regulated markets.

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