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LSIC2SD120C10 Silicon Carbide Schottky Diode Equivalent & Substitute Parts
Part Overview
The LSIC2SD120C10 is a 1200 V, 33 A silicon carbide Schottky diode manufactured by Littelfuse Inc., designed for surface mount applications in the TO-252 (DPAK) package. This component operates across a junction temperature range of -55°C to 175°C and features zero reverse recovery time, characteristic of SiC Schottky technology.
The LSIC2SD120C10 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this rectifier diode.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 1200 | V |
| Current - Average Rectified (Io) | 33 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A | V @ A |
| Reverse Recovery Time (trr) | 0 | ns |
| Current - Reverse Leakage @ Vr | 100 | µA @ 1200 V |
| Capacitance @ Vr, F | 582 | pF @ 1V, 1MHz |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | |
| Operating Temperature - Junction | -55 to 175 | °C |
| Technology | SiC (Silicon Carbide) Schottky | |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution of the LSIC2SD120C10 is determined by the following critical parameters:
Voltage Rating: All substitute parts must maintain the 1200 V DC reverse voltage specification to ensure equivalent electrical performance in the application circuit.
Current Rating: The primary substitute (C4D10120E series) matches the 33 A average rectified current specification. Secondary substitutes with lower current ratings (10 A, 19 A, 24.5 A) are listed for applications where reduced current capacity is acceptable.
Forward Voltage: Forward voltage characteristics at specified current levels must be compatible with circuit design requirements. The LSIC2SD120C10 specifies 1.8 V @ 10 A.
Reverse Recovery Time: All listed substitutes maintain zero reverse recovery time, consistent with SiC Schottky technology.
Package Compatibility: All substitutes use the TO-252-3 DPAK package with identical pinout and thermal characteristics, enabling direct board-level replacement.
Technology: All substitutes employ SiC Schottky technology, maintaining the same operational characteristics and performance profile.
Compliance: RoHS3 compliance is maintained across all substitute options.
Parameter Comparison
| Parameter | LSIC2SD120C10 | C4D10120E | C4D10120E-TR | FFSD10120A | S4D10120E | SICRD101200 |
|---|---|---|---|---|---|---|
| Manufacturer | Littelfuse Inc. | Wolfspeed, Inc. | Wolfspeed, Inc. | onsemi | SMC Diode Solutions | SMC Diode Solutions |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Current - Average Rectified (Io) | 33 A | 10 A | 10 A | Not Specified | 10 A | 10 A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A | 1.8 V @ 2 A | 1.8 V @ 2 A | 1.75 V @ 10 A | 1.8 V @ 10 A | 1.8 V @ 10 A |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V | 50 µA @ 1200 V | 50 µA @ 1200 V | 200 µA @ 1200 V | 30 µA @ 1200 V | 100 µA @ 1200 V |
| Capacitance @ Vr, F | 582 pF @ 1V, 1MHz | 167 pF @ 0V, 1MHz | 167 pF @ 0V, 1MHz | 612 pF @ 1V, 100kHz | 772 pF @ 0V, 1MHz | 640 pF @ 0V, 1MHz |
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Operating Temperature - Junction | -55 to 175°C | -55 to 175°C | -55 to 175°C | Not Specified | -55 to 175°C | -55 to 175°C |
| Technology | SiC Schottky | SiC Schottky | SiC Schottky | SiC Schottky | SiC Schottky | SiC Schottky |
| Product Status | Obsolete | Active | Active | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
Primary Substitute - Current-Matched Application:
The C4D10120E and C4D10120E-TR (Wolfspeed, Inc., Z-Rec® series) are active production parts with identical 1200 V voltage rating and 33 A current capacity matching the LSIC2SD120C10. Both variants maintain ROHS3 compliance and operate across the same -55°C to 175°C junction temperature range. The C4D10120E-TR variant offers superior supply availability (23,135 units in stock) with Cut Tape and Digi-Reel® packaging options. Forward voltage characteristics (1.8 V @ 10 A) align with the original specification.
Secondary Substitutes - Reduced Current Applications:
The C4D02120E, C4D05120E, and C4D08120E series from Wolfspeed provide 10 A, 19 A, and 24.5 A current ratings respectively. These parts are suitable for applications where the circuit design permits reduced current capacity. All maintain 1200 V voltage rating, zero reverse recovery time, and ROHS3 compliance. The C4D05120E-TR variant (2,900 units in stock) and C4D08120E-TR variant (1,578 units in stock) offer tape and reel packaging.
Alternative Manufacturers:
The FFSD10120A (onsemi) and S4D10120E / SICRD101200 (SMC Diode Solutions) provide additional sourcing options with 1200 V rating and SiC Schottky technology. The FFSD10120A features MSL 1 (Unlimited) moisture sensitivity rating and REACH Unaffected status. The S4D10120E demonstrates the lowest reverse leakage current (30 µA @ 1200 V) among listed substitutes. All three alternatives maintain TO-252-3 DPAK package compatibility and ROHS3 compliance.
Supply Chain Considerations:
All recommended substitutes are classified as active production parts with established inventory levels. The C4D10120E-TR variant provides the highest inventory availability (23,135 units), supporting immediate procurement requirements.
Frequently Asked Questions (FAQ)
Q: Can the C4D10120E directly replace the LSIC2SD120C10 on the PCB?
A: Yes. Both parts use the TO-252-3 DPAK package with identical pinout and thermal interface. No PCB modifications are required for direct substitution.
Q: What is the difference between C4D10120E and C4D10120E-TR?
A: Both parts are electrically identical with 1200 V rating and 33 A current capacity. The primary difference is packaging: C4D10120E is supplied in Tube packaging, while C4D10120E-TR is supplied in Cut Tape and Digi-Reel® format. The -TR variant offers higher inventory availability (23,135 units versus 1,400 units).
Q: Why are lower current-rated parts (C4D02120E, C4D05120E, C4D08120E) listed as substitutes?
A: These parts maintain the 1200 V voltage rating and SiC Schottky technology. They are suitable substitutes for applications where circuit design permits reduced current capacity below 33 A. Current rating selection depends on actual application requirements.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts maintain ROHS3 compliance, consistent with the original LSIC2SD120C10 specification.
Q: What is the significance of zero reverse recovery time?
A: Zero reverse recovery time is a characteristic of SiC Schottky diodes. This eliminates reverse recovery losses present in silicon diodes, resulting in improved efficiency and reduced electromagnetic interference in switching applications. All listed substitutes maintain this performance characteristic.
Q: Does moisture sensitivity affect component selection?
A: The LSIC2SD120C10 lists MSL as Not Applicable. Among substitutes, the FFSD10120A offers MSL 1 (Unlimited), indicating superior moisture resistance. The Wolfspeed C4D series parts specify MSL 3 (168 Hours). MSL selection depends on storage and assembly process requirements.
Q: Can I use FFSD10120A or S4D10120E if my application requires 33 A current?
A: The FFSD10120A does not specify average rectified current in the provided data. The S4D10120E is rated for 10 A average rectified current. For applications requiring 33 A capacity, use C4D10120E or C4D10120E-TR. For lower current applications, FFSD10120A and S4D10120E are viable alternatives.
Q: What is the difference in forward voltage between substitutes?
A: Forward voltage varies slightly between manufacturers. The LSIC2SD120C10 specifies 1.8 V @ 10 A. The FFSD10120A specifies 1.75 V @ 10 A (5% lower). The C4D series specifies 1.8 V at varying current levels. These differences are within typical SiC Schottky diode tolerances and do not affect circuit functionality in most applications.
Q: Are there REACH compliance differences between substitutes?
A: Yes. The FFSD10120A (onsemi) is REACH Unaffected. The Wolfspeed C4D series and SMC Diode Solutions parts are REACH Affected. REACH compliance status should be verified against specific supply chain and regulatory requirements.
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