LPT16ED Equivalent & Substitute Parts

Part Overview

The LPT16ED is an RF transistor NPN die manufactured by Skyworks Solutions Inc., designed for high-frequency applications requiring 4V operation at 16GHz with 250mW power dissipation. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity. Substitute parts must maintain compatibility with the electrical specifications and mounting requirements of the original design.

Substiute Parts

LPT16ED
Skyworks Solutions Inc.In Stock: 1106LPT16ED Datasheet
LPT16ED
Current Part
2SC4915-Y,LF
Toshiba Semiconductor and StorageIn Stock: 8522SC4915-Y,LF Datasheet
2SC4915-Y,LF
Similar
BFP196WH6327XTSA1
Infineon TechnologiesIn Stock: 13343BFP196WH6327XTSA1 Datasheet
BFP196WH6327XTSA1
Similar
BFP760H6327XTSA1
Infineon TechnologiesIn Stock: 800347BFP760H6327XTSA1 Datasheet
BFP760H6327XTSA1
Similar
BFQ19SH6327XTSA1
Infineon TechnologiesIn Stock: 15017BFQ19SH6327XTSA1 Datasheet
BFQ19SH6327XTSA1
Similar
BFR35APE6327HTSA1
Infineon TechnologiesIn Stock: 3724BFR35APE6327HTSA1 Datasheet
BFR35APE6327HTSA1
Similar
BFS 17P E6433
Infineon TechnologiesIn Stock: 788BFS 17P E6433 Datasheet
BFS 17P E6433
Similar
MMBTH10LT1G
onsemiIn Stock: 62479MMBTH10LT1G Datasheet
MMBTH10LT1G
Similar
MRF327
MACOM Technology SolutionsIn Stock: 1398MRF327 Datasheet
MRF327
Similar
MT4S300U(TE85L,O,F
Toshiba Semiconductor and StorageIn Stock: 925MT4S300U(TE85L,O,F Datasheet
MT4S300U(TE85L,O,F
Similar

Key Parameters

Parameter LPT16ED Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 4V V
Frequency - Transition 16GHz GHz
Power - Max 250mW mW
Gain 5.2dB dB
Current - Collector (Ic) (Max) 80mA mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 2V
Operating Temperature 150°C °C (TJ)
Mounting Type Surface Mount
Package / Case Die
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)

Substitute Part Grouping Explanation

Substitution of the LPT16ED is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN (required match)
  • Voltage - Collector Emitter Breakdown (Max): 4V or higher
  • Frequency - Transition: 16GHz or higher
  • Power - Max: 250mW or higher
  • Current - Collector (Ic) (Max): 80mA or higher
  • Operating Temperature: 150°C or higher
  • RoHS Status: ROHS3 Compliant (required match)

Secondary Compatibility Factors:

  • Mounting Type: Surface Mount (required match)
  • DC Current Gain (hFE): 50 or higher at specified conditions

Substitute parts are grouped into two categories based on frequency capability and voltage rating alignment with the LPT16ED specifications. Parts meeting or exceeding all primary criteria are classified as direct electrical equivalents. Parts with higher voltage ratings or frequency capabilities remain functionally compatible when circuit design accommodates the additional performance margin.

Parameter Comparison

Parameter LPT16ED BFP760H6327XTSA1 MT4S300U(TE85L,O,F BFP196WH6327XTSA1 BFR35APE6327HTSA1 MMBTH10LT1G
Transistor Type NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4V 4V 4V 12V 15V 25V
Frequency - Transition 16GHz 45GHz 26.5GHz 7.5GHz 5GHz 650MHz
Power - Max 250mW 240mW 250mW 700mW 280mW 225mW
Current - Collector (Ic) (Max) 80mA 70mA 50mA 150mA 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 2V 160 @ 35mA, 3V 200 @ 10mA, 3V 70 @ 50mA, 8V 70 @ 15mA, 8V 60 @ 4mA, 10V
Operating Temperature 150°C 150°C 150°C 150°C 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case Die SC-82A, SOT-343 SC-82A, SOT-343 SC-82A, SOT-343 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Tier 1 - Closest Electrical Match:

BFP760H6327XTSA1 (Infineon Technologies) and MT4S300U(TE85L,O,F (Toshiba Semiconductor and Storage) are the primary substitutes for the LPT16ED. Both devices operate at 4V maximum collector-emitter breakdown voltage, matching the original specification exactly. BFP760H6327XTSA1 provides 45GHz transition frequency with 240mW power rating, exceeding the 16GHz and 250mW requirements. MT4S300U(TE85L,O,F delivers 26.5GHz transition frequency with 250mW power rating, directly matching the power specification. Both are ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1), providing superior handling characteristics compared to the original MSL 3 rating. Both are active products with established supply chains.

Tier 2 - Voltage-Elevated Alternatives:

BFP196WH6327XTSA1 (Infineon Technologies) operates at 12V maximum collector-emitter breakdown voltage with 7.5GHz transition frequency and 700mW power rating. This device is suitable for applications where circuit design permits higher voltage operation. BFR35APE6327HTSA1 (Infineon Technologies) operates at 15V maximum collector-emitter breakdown voltage with 5GHz transition frequency and 280mW power rating. Both are ROHS3 compliant with MSL 1 rating and active product status.

Tier 3 - Lower Frequency Alternative:

MMBTH10LT1G (onsemi) operates at 25V maximum collector-emitter breakdown voltage with 650MHz transition frequency and 225mW power rating. This device is applicable only to applications where the 16GHz frequency requirement can be relaxed. ROHS3 compliant with MSL 1 rating and active product status.

Compliance and Certification:

All substitute parts maintain ROHS3 compliance, matching the original LPT16ED certification. All recommended Tier 1 and Tier 2 substitutes are active products with established manufacturing and supply continuity. The transition from MSL 3 to MSL 1 rating in substitute parts provides improved moisture handling and reduced storage constraints.

Frequently Asked Questions (FAQ)

Q: Can BFP760H6327XTSA1 directly replace the LPT16ED in all applications?

A: BFP760H6327XTSA1 meets all primary electrical specifications of the LPT16ED: 4V maximum collector-emitter breakdown voltage, 16GHz minimum transition frequency (45GHz actual), 250mW minimum power rating (240mW actual), and 80mA minimum collector current (70mA actual). The primary difference is package format: BFP760H6327XTSA1 is supplied in SOT-343 package while LPT16ED is a die. Circuit board layout and interconnection methods must accommodate this package change.

Q: What is the significance of the MSL rating difference between LPT16ED and substitute parts?

A: The LPT16ED carries MSL 3 rating (168 hours maximum floor life), while all substitute parts carry MSL 1 rating (unlimited floor life). MSL rating indicates moisture sensitivity during storage and handling. Lower MSL numbers provide greater tolerance to ambient humidity and extended shelf life without requiring specialized dry-pack storage or baking procedures. This represents an improvement in manufacturing and logistics flexibility.

Q: Is MT4S300U(TE85L,O,F suitable for direct substitution?

A: MT4S300U(TE85L,O,F meets all primary electrical specifications: 4V maximum collector-emitter breakdown voltage, 26.5GHz transition frequency, 250mW power rating (exact match), and 50mA collector current. The device is ROHS3 compliant and active. Package format is SOT-343, requiring the same board layout considerations as BFP760H6327XTSA1. DC current gain (hFE) is 200 @ 10mA, 3V, exceeding the LPT16ED specification of 50 @ 20mA, 2V.

Q: Can BFP196WH6327XTSA1 be used in circuits designed for 4V operation?

A: BFP196WH6327XTSA1 is rated for 12V maximum collector-emitter breakdown voltage. It can operate in 4V circuits without exceeding its voltage rating. However, the device is optimized for higher voltage applications. Frequency capability is 7.5GHz, which is below the LPT16ED specification of 16GHz. This device is suitable only for applications where the 16GHz frequency requirement can be reduced to 7.5GHz or lower.

Q: What are the package implications of substituting the LPT16ED die with packaged alternatives?

A: The LPT16ED is supplied as a bare die, requiring direct attachment to substrate or carrier. Substitute parts BFP760H6327XTSA1, MT4S300U(TE85L,O,F, and BFP196WH6327XTSA1 are supplied in SOT-343 package (SC-82A). BFR35APE6327HTSA1 and MMBTH10LT1G are supplied in SOT-23-3 package (TO-236-3, SC-59). These packaged alternatives include integrated leads and require standard surface mount assembly processes. Circuit board layout, trace routing, and thermal management must be redesigned to accommodate the selected package format.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed in this document are ROHS3 compliant, matching the original LPT16ED certification. This ensures compatibility with procurement requirements and regulatory compliance standards.

Q: Which substitute provides the closest frequency match to the LPT16ED?

A: MT4S300U(TE85L,O,F provides 26.5GHz transition frequency, which is the closest match to the LPT16ED specification of 16GHz among parts with 4V voltage rating. BFP760H6327XTSA1 provides 45GHz, which exceeds the requirement by a larger margin but remains within acceptable operating parameters for most RF applications.

Q: What is the impact of higher DC current gain (hFE) in substitute parts?

A: Substitute parts exhibit higher DC current gain values compared to the LPT16ED. BFP760H6327XTSA1 provides hFE of 160 @ 35mA, 3V versus LPT16ED at 50 @ 20mA, 2V. MT4S300U(TE85L,O,F provides hFE of 200 @ 10mA, 3V. Higher current gain indicates improved amplification efficiency and may require circuit bias network adjustment to maintain equivalent operating point and gain characteristics. Circuit simulation and validation are necessary to confirm performance equivalence.

Request Quote (Ships tomorrow)