LMV358IDR Equivalent & Substitute Parts

Part Overview

The LMV358IDR is a general-purpose operational amplifier manufactured by Texas Instruments, featuring dual circuits in an 8-SOIC surface-mount package. This rail-to-rail output amplifier operates across a 2.7V to 5.5V supply range with a 1 MHz gain-bandwidth product and 1V/µs slew rate. The device is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges. Alternative sources and packaging formats may be required based on inventory availability or application-specific requirements.

Substiute Parts

LMV358IDR
Texas InstrumentsIn Stock: 260218LMV358IDR Datasheet
LMV358IDR
Current Part
LMV358M/NOPB
Texas InstrumentsIn Stock: 1996LMV358M/NOPB Datasheet
LMV358M/NOPB
Direct
LMV358MX/NOPB
Texas InstrumentsIn Stock: 155123LMV358MX/NOPB Datasheet
LMV358MX/NOPB
Direct
LPV358M/NOPB
Texas InstrumentsIn Stock: 1115LPV358M/NOPB Datasheet
LPV358M/NOPB
MFR Recommended
LPV358MX/NOPB
Texas InstrumentsIn Stock: 27583LPV358MX/NOPB Datasheet
LPV358MX/NOPB
MFR Recommended
AD8542ARZ
Analog Devices Inc.In Stock: 37262AD8542ARZ Datasheet
AD8542ARZ
MFR Recommended
AZV358MTR-G1
Diodes IncorporatedIn Stock: 3320AZV358MTR-G1 Datasheet
AZV358MTR-G1
MFR Recommended
BU7242F-E2
Rohm SemiconductorIn Stock: 5188BU7242F-E2 Datasheet
BU7242F-E2
MFR Recommended
BU7266F-E2
Rohm SemiconductorIn Stock: 1107BU7266F-E2 Datasheet
BU7266F-E2
MFR Recommended
BU7266SF-E2
Rohm SemiconductorIn Stock: 3198BU7266SF-E2 Datasheet
BU7266SF-E2
MFR Recommended
BU7486F-E2
Rohm SemiconductorIn Stock: 4324BU7486F-E2 Datasheet
BU7486F-E2
MFR Recommended
LMR342FJ-GE2
Rohm SemiconductorIn Stock: 1596LMR342FJ-GE2 Datasheet
LMR342FJ-GE2
MFR Recommended
LMR358FJ-GE2
Rohm SemiconductorIn Stock: 3582LMR358FJ-GE2 Datasheet
LMR358FJ-GE2
MFR Recommended
LMR932F-GE2
Rohm SemiconductorIn Stock: 3717LMR932F-GE2 Datasheet
LMR932F-GE2
MFR Recommended
LMV358DR2G
onsemiIn Stock: 4458LMV358DR2G Datasheet
LMV358DR2G
MFR Recommended
LMV358SG-13
Diodes IncorporatedIn Stock: 8089LMV358SG-13 Datasheet
LMV358SG-13
MFR Recommended
LMV822IDT
STMicroelectronicsIn Stock: 17937LMV822IDT Datasheet
LMV822IDT
MFR Recommended
LMX358IDT
STMicroelectronicsIn Stock: 18708LMX358IDT Datasheet
LMX358IDT
MFR Recommended
MAX4471ESA+
Analog Devices Inc./Maxim IntegratedIn Stock: 13578MAX4471ESA+ Datasheet
MAX4471ESA+
MFR Recommended
MAX4471ESA+T
Analog Devices Inc./Maxim IntegratedIn Stock: 3656MAX4471ESA+T Datasheet
MAX4471ESA+T
MFR Recommended
MC33202DR2G
onsemiIn Stock: 89001MC33202DR2G Datasheet
MC33202DR2G
MFR Recommended
MCP6002-E/SN
Microchip TechnologyIn Stock: 1540MCP6002-E/SN Datasheet
MCP6002-E/SN
MFR Recommended
MCP6002-I/SN
Microchip TechnologyIn Stock: 83973MCP6002-I/SN Datasheet
MCP6002-I/SN
MFR Recommended
MCP6002T-E/SN
Microchip TechnologyIn Stock: 23856MCP6002T-E/SN Datasheet
MCP6002T-E/SN
MFR Recommended
MCP6002T-I/SN
Microchip TechnologyIn Stock: 241262MCP6002T-I/SN Datasheet
MCP6002T-I/SN
MFR Recommended
MCP6402-E/SN
Microchip TechnologyIn Stock: 14009MCP6402-E/SN Datasheet
MCP6402-E/SN
MFR Recommended
MCP6402-H/SN
Microchip TechnologyIn Stock: 8801MCP6402-H/SN Datasheet
MCP6402-H/SN
MFR Recommended
MCP6402T-E/SN
Microchip TechnologyIn Stock: 1243MCP6402T-E/SN Datasheet
MCP6402T-E/SN
MFR Recommended
MCP6402T-H/SN
Microchip TechnologyIn Stock: 2481MCP6402T-H/SN Datasheet
MCP6402T-H/SN
MFR Recommended
MCP6407-H/SN
Microchip TechnologyIn Stock: 9326MCP6407-H/SN Datasheet
MCP6407-H/SN
MFR Recommended
MCP6L02T-E/SN
Microchip TechnologyIn Stock: 54998MCP6L02T-E/SN Datasheet
MCP6L02T-E/SN
MFR Recommended
NCS20032DR2G
onsemiIn Stock: 8093NCS20032DR2G Datasheet
NCS20032DR2G
MFR Recommended
NCV20032DR2G
onsemiIn Stock: 7902NCV20032DR2G Datasheet
NCV20032DR2G
MFR Recommended
TSV852IYDT
STMicroelectronicsIn Stock: 10383TSV852IYDT Datasheet
TSV852IYDT
MFR Recommended

Key Parameters

Parameter Value Unit
Amplifier Type General Purpose
Number of Circuits 2
Output Type Rail-to-Rail
Slew Rate 1 V/µs
Gain Bandwidth Product 1 MHz
Current - Input Bias 15 nA
Voltage - Input Offset 1.7 mV
Current - Supply (x2 Channels) 210 µA
Current - Output / Channel 40 mA
Voltage - Supply Span (Min) 2.7 V
Voltage - Supply Span (Max) 5.5 V
Operating Temperature -40 to 125 °C
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts are classified into three functional categories based on electrical parameter alignment with the LMV358IDR:

Category 1: Direct Equivalents (Identical Electrical Specifications) Parts LMV358M/NOPB and LMV358MX/NOPB maintain all core electrical parameters of the main part. These differ only in packaging format (Tube vs. Cut Tape & Digi-Reel). Both are Texas Instruments products with identical slew rate (1V/µs), gain-bandwidth product (1 MHz), input bias current (15 nA), and supply voltage range (2.7V–5.5V). Output current capability increases to 160 mA per channel, which is compatible with applications requiring the LMV358IDR.

Category 2: Manufacturer-Recommended Alternatives (Modified Performance Parameters) Parts LPV358M/NOPB and LPV358MX/NOPB are Texas Instruments alternatives with reduced power consumption (15µA vs. 210µA supply current) and lower slew rate (0.1V/µs vs. 1V/µs). These parts operate within the same 2.7V–5.5V supply range but with reduced maximum operating temperature (85°C vs. 125°C). The AD8542ARZ from Analog Devices Inc. provides 1 MHz gain-bandwidth product matching with lower input bias current (4 pA) and reduced supply current (45µA), maintaining the full -40°C to 125°C temperature range.

Category 3: Cross-Manufacturer Substitutes (Functional Compatibility) The AZV358MTR-G1 from Diodes Incorporated matches electrical specifications (1V/µs slew rate, 1 MHz gain-bandwidth, 15 nA input bias) with 60 mA output current per channel. Operating temperature is limited to -40°C to 85°C. The Rohm Semiconductor parts (BU7242F-E2, BU7266F-E2, BU7266SF-E2, BU7486F-E2) are CMOS amplifiers with varying performance characteristics and different package dimensions (8-SOP, 0.173" width vs. 8-SOIC, 0.154" width).

Substitution Criteria:

  • Package compatibility: 8-SOIC surface-mount form factor
  • Dual-circuit configuration (2 circuits minimum)
  • Rail-to-rail output capability
  • Supply voltage range overlap with 2.7V–5.5V
  • Operating temperature range sufficient for application requirements
  • RoHS3 compliance and MSL rating compatibility

Parameter Comparison

Part Number Manufacturer Slew Rate (V/µs) GBW (MHz) Input Bias (nA) Input Offset (mV) Supply Current (µA) Output Current (mA) Temp Range (°C) Packaging
LMV358IDR Texas Instruments 1 1 15 1.7 210 40 -40 to 125 Cut Tape
LMV358M/NOPB Texas Instruments 1 1 15 1.7 210 160 -40 to 125 Tube
LMV358MX/NOPB Texas Instruments 1 1 15 1.7 210 160 -40 to 125 Cut Tape
LPV358M/NOPB Texas Instruments 0.1 0.152 2 1.5 15 16 -40 to 85 Tube
LPV358MX/NOPB Texas Instruments 0.1 0.152 2 1.5 15 16 -40 to 85 Tape & Reel
AD8542ARZ Analog Devices Inc. 0.92 1 0.004 1 45 30 -40 to 125 Tube
AZV358MTR-G1 Diodes Incorporated 1 1 15 1.7 210 60 -40 to 85 Tape & Reel
BU7242F-E2 Rohm Semiconductor 0.4 0.9 0.001 1 180 12 -40 to 85 Cut Tape
BU7266F-E2 Rohm Semiconductor 0.0024 0.004 0.001 1 0.7 4 -40 to 85 Cut Tape
BU7266SF-E2 Rohm Semiconductor 0.0024 0.004 0.001 1 0.7 4 -40 to 105 Cut Tape
BU7486F-E2 Rohm Semiconductor 10 10 0.001 1 6000 12 -40 to 105 Cut Tape

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance): LMV358MX/NOPB is the primary substitute when Cut Tape & Digi-Reel packaging is required. This part maintains all electrical specifications of the LMV358IDR while offering higher output current capability (160 mA vs. 40 mA per channel). LMV358M/NOPB provides identical electrical performance in Tube packaging format. Both parts are Active status, RoHS3 compliant, and carry MSL 1 rating.

For Power-Constrained Applications: LPV358M/NOPB and LPV358MX/NOPB reduce supply current to 15µA (14× reduction) at the cost of reduced slew rate (0.1V/µs) and gain-bandwidth product (152 kHz). These parts are suitable for battery-powered or low-power applications where the reduced operating temperature maximum (85°C) is acceptable. Both maintain RoHS3 compliance and MSL 1 rating.

For Extended Temperature Range with Reduced Power: AD8542ARZ from Analog Devices Inc. maintains the full -40°C to 125°C operating range while reducing supply current to 45µA. This part offers 1 MHz gain-bandwidth product with significantly lower input bias current (4 pA). RoHS3 compliance and MSL 1 rating are maintained. Output current capability is 30 mA per channel.

For Cross-Manufacturer Sourcing: AZV358MTR-G1 from Diodes Incorporated provides electrical equivalence (1V/µs slew rate, 1 MHz gain-bandwidth, 15 nA input bias) with 60 mA output current per channel. Operating temperature is limited to -40°C to 85°C. MSL rating is 3 (168 Hours), requiring controlled storage conditions. RoHS3 compliance is maintained.

For Specialized Performance Requirements: Rohm Semiconductor CMOS amplifiers (BU7242F-E2, BU7266F-E2, BU7266SF-E2, BU7486F-E2) offer alternative performance profiles. BU7242F-E2 provides 900 kHz gain-bandwidth with ultra-low input bias current (1 pA) and reduced supply current (180µA). BU7266 variants offer ultra-low power consumption (700 nA) for applications requiring minimal current draw. BU7486F-E2 provides 10 MHz gain-bandwidth and 10V/µs slew rate for high-speed applications. Package dimensions differ (8-SOP, 0.173" width vs. 8-SOIC, 0.154" width), requiring PCB layout verification.

Compliance Considerations: All listed substitutes maintain RoHS3 compliance. MSL ratings vary: LMV358 series and AD8542ARZ carry MSL 1 (unlimited); AZV358MTR-G1 carries MSL 3 (168 Hours); Rohm parts carry MSL 1. REACH status is unaffected for all parts. ECCN classification is EAR99 for all parts.

Frequently Asked Questions (FAQ)

Q: Can LMV358MX/NOPB directly replace LMV358IDR in existing designs? A: Yes. LMV358MX/NOPB maintains identical electrical specifications and 8-SOIC package format. The higher output current capability (160 mA vs. 40 mA per channel) is compatible with applications designed for the LMV358IDR. Packaging format differs (Cut Tape & Digi-Reel vs. Cut Tape), which affects procurement and assembly processes but not electrical function.

Q: What is the primary difference between LPV358 and LMV358 series? A: LPV358 variants reduce supply current from 210µA to 15µA, representing a 14× power reduction. This is achieved through lower slew rate (0.1V/µs vs. 1V/µs) and reduced gain-bandwidth product (152 kHz vs. 1 MHz). Maximum operating temperature is reduced to 85°C. LPV358 is suitable for battery-powered or ultra-low-power applications where reduced bandwidth is acceptable.

Q: Is the AD8542ARZ suitable for high-temperature applications? A: Yes. AD8542ARZ maintains the full -40°C to 125°C operating temperature range of the LMV358IDR while reducing supply current to 45µA. Slew rate is 0.92V/µs (slightly lower than 1V/µs) and gain-bandwidth product is 1 MHz (matching the main part). Input bias current is significantly lower (4 pA vs. 15 nA).

Q: Why do Rohm Semiconductor parts have different package dimensions? A: Rohm parts use 8-SOP packaging (0.173" width) versus the standard 8-SOIC (0.154" width) of the LMV358IDR. While both are 8-pin surface-mount packages, the physical dimensions differ. PCB footprint verification is required before substitution. Pin configuration and electrical function remain compatible for dual-circuit general-purpose amplifier applications.

Q: What does MSL 3 (168 Hours) mean for AZV358MTR-G1? A: MSL 3 indicates the component requires controlled storage conditions with maximum floor life of 168 hours after exposure to ambient conditions (30°C, 60% relative humidity). After this period, the component must be baked before assembly. MSL 1 (unlimited) parts like LMV358IDR have no floor life restrictions. MSL rating affects inventory management and assembly procedures.

Q: Can BU7266 variants replace LMV358IDR in signal conditioning applications? A: BU7266 variants are not suitable for general-purpose amplifier applications requiring the LMV358IDR. These ultra-low-power CMOS amplifiers have 4 kHz gain-bandwidth product and 0.0024V/µs slew rate, which are insufficient for most signal conditioning circuits. BU7266 is designed for ultra-low-power biomedical and sensor applications where bandwidth requirements are minimal.

Q: What is the advantage of BU7486F-E2 over LMV358IDR? A: BU7486F-E2 provides 10 MHz gain-bandwidth product and 10V/µs slew rate, making it suitable for high-speed applications. However, supply current increases to 6 mA (28× higher than LMV358IDR) and output current is limited to 12 mA per channel. Minimum supply voltage is 3V (vs. 2.7V). BU7486F-E2 is selected for applications requiring high-speed performance where power consumption is not a constraint.

Q: Are all substitute parts RoHS3 compliant? A: Yes. All listed substitute parts maintain RoHS3 compliance. REACH status is unaffected for all parts. ECCN classification is EAR99 for all parts, indicating standard commercial electronic components.

Q: What inventory considerations apply to substitute selection? A: LMV358IDR has 260,200 pcs in stock. LMV358MX/NOPB has 155,100 pcs (Cut Tape format). LMV358M/NOPB has 1,898 pcs (Tube format). LPV358MX/NOPB has 27,503 pcs (Tape & Reel). AD8542ARZ has 37,241 pcs (Tube). AZV358MTR-G1 has 3,268 pcs (Tape & Reel). Rohm parts range from 1,012 to 5,100 pcs. Inventory availability may influence substitution decisions for high-volume applications.

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