LMR324F-GE2 Equivalent & Substitute Parts

Part Overview

The LMR324F-GE2 is a general purpose operational amplifier manufactured by Rohm Semiconductor, featuring four independent circuits in a 14-SOP surface mount package. This device is classified as Active product status and is ROHS3 compliant. The LMR324F-GE2 operates across a supply voltage range of 2.7V to 5.5V with rail-to-rail output capability, making it suitable for low-voltage analog signal processing applications. Substitute parts are identified when equivalent functional performance can be achieved within the specified electrical and mechanical parameters of this product category.

Substiute Parts

LMR324F-GE2

Rohm SemiconductorIn Stock: 909LMR324F-GE2 Datasheet

Current PartRFQ

NCS20034DR2G

onsemiIn Stock: 8557NCS20034DR2G Datasheet

SimilarRFQ

NCV20034DR2G

onsemiIn Stock: 4383NCV20034DR2G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the LMR324F-GE2 are identified based on the following critical parameters that define functional equivalence within the general purpose operational amplifier category:

Primary Substitution Criteria:

• Amplifier Type: General Purpose
• Number of Circuits: 4 independent circuits
• Output Type: Rail-to-Rail
• Mounting Type: Surface Mount
• Package Category: 14-pin SOIC/SOP variants
• Supply Voltage Compatibility: Minimum 2.7V to 5.5V maximum overlap
• RoHS3 Compliance: Required
• Product Status: Active

Identified Substitute Parts:

1. NCS20034DR2G (onsemi) — Functionally equivalent with enhanced electrical performance
2. NCV20034DR2G (onsemi) — Functionally equivalent with extended temperature range and higher output current capability

Both substitute parts maintain the four-circuit general purpose amplifier architecture with rail-to-rail output in 14-SOIC surface mount packaging. Electrical performance parameters exceed or match the LMR324F-GE2 specifications, and both devices maintain full RoHS3 compliance and Active product status.

Parameter Comparison

Engineering Selection Recommendations

NCS20034DR2G Selection Criteria:

The NCS20034DR2G is suitable for applications where the LMR324F-GE2 is unavailable and enhanced electrical performance is acceptable. This substitute provides superior slew rate (8V/µs vs. 1V/µs), higher gain bandwidth product (7MHz vs. 3MHz), and significantly lower input bias current (1pA vs. 15nA). Supply current is reduced to 275µA per four channels. The device maintains full RoHS3 compliance and Active product status. Operating temperature range is not specified in available data. Package dimensions differ slightly (0.154" vs. 0.173" width), requiring PCB layout verification for pin-to-pin compatibility.

NCV20034DR2G Selection Criteria:

The NCV20034DR2G is suitable for applications requiring extended operating temperature range (-40°C to 125°C vs. -40°C to 85°C) and higher output current capability (96mA per channel vs. 60mA). This substitute provides the same enhanced electrical performance as NCS20034DR2G with additional thermal margin. Supply current is reduced to 275µA per four channels. The device maintains full RoHS3 compliance and Active product status. Package dimensions are identical to NCS20034DR2G (0.154" width), requiring PCB layout verification.

Compliance Verification:

All identified substitutes maintain ROHS3 compliance, MSL Level 1 (Unlimited), and Active product status, ensuring regulatory and supply chain continuity.

Frequently Asked Questions (FAQ)

Q1: Can NCS20034DR2G or NCV20034DR2G be used as direct pin-for-pin replacements for LMR324F-GE2?

A: Both onsemi substitutes are 14-pin SOIC devices with identical pinout architecture for general purpose quad operational amplifiers. However, package width differs (0.154" vs. 0.173"), requiring PCB layout verification to confirm mechanical fit within existing footprints. Electrical pin functionality is equivalent.

Q2: What are the key electrical differences between LMR324F-GE2 and the substitute parts?

A: The primary differences are slew rate (1V/µs vs. 8V/µs), gain bandwidth product (3MHz vs. 7MHz), input bias current (15nA vs. 1pA), and input offset voltage (1mV vs. 0.5mV). Both substitutes demonstrate superior performance in these parameters. Output current per channel differs: NCS20034DR2G provides 8mA while NCV20034DR2G provides 96mA, compared to 60mA for the LMR324F-GE2.

Q3: Which substitute should be selected for high-temperature applications?

A: NCV20034DR2G is specified for -40°C to 125°C operating range, providing 40°C additional upper temperature margin compared to LMR324F-GE2 (-40°C to 85°C). NCS20034DR2G operating temperature is not specified in available data.

Q4: Are there supply voltage compatibility concerns when substituting?

A: Both substitutes operate across 1.7V to 5.5V supply range, which encompasses the LMR324F-GE2 range of 2.7V to 5.5V. The substitutes provide lower minimum supply voltage capability (1.7V vs. 2.7V), enabling operation in additional low-voltage applications.

Q5: Do the substitute parts maintain the same compliance certifications?

A: Yes. Both NCS20034DR2G and NCV20034DR2G are ROHS3 compliant, MSL Level 1 (Unlimited), and carry Active product status identical to LMR324F-GE2. REACH and ECCN classifications are equivalent.

Q6: What is the impact of reduced supply current in the substitutes?

A: Both onsemi substitutes consume 275µA total supply current for four channels, compared to 410µA for the LMR324F-GE2. This represents approximately 33% reduction in quiescent power consumption, beneficial for battery-powered or power-constrained applications.

Q7: How should PCB layout be modified when substituting these parts?

A: Package width difference (0.154" vs. 0.173") requires verification that the substitute footprint fits within existing PCB pad patterns. Pin spacing and pitch remain standard 14-SOIC dimensions. Electrical performance improvements may allow relaxed filtering or biasing component tolerances in some circuit topologies.