LM5110-1M Low-Side Gate Driver IC Equivalent & Substitute Parts

Part Overview

The LM5110-1M is a low-side gate driver IC manufactured by Texas Instruments, designed for driving N-channel MOSFETs in power management applications. This dual-channel, non-inverting gate driver operates from a 4.6V to 14V supply and delivers peak output currents of 3A (source) and 5A (sink). The device is packaged in an 8-SOIC surface-mount package.

The LM5110-1M is classified as obsolete, making it necessary to identify functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain identical electrical performance, package compatibility, and operational characteristics to ensure seamless integration into existing circuit designs.

Substiute Parts

LM5110-1M
Texas InstrumentsIn Stock: 77361LM5110-1M Datasheet
LM5110-1M
Current Part
LM5110-1M/NOPB
National SemiconductorIn Stock: 3179LM5110-1M/NOPB Datasheet
LM5110-1M/NOPB
Direct

Key Parameters

Parameter Specification
Driven Configuration Low-Side
Number of Drivers 2
Gate Type N-Channel MOSFET
Input Type Non-Inverting
Voltage - Supply 4.6V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 3A, 5A
Rise / Fall Time (Typ) 14ns, 12ns
Operating Temperature -40°C ~ 125°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution eligibility for the LM5110-1M is determined by strict equivalence across the following critical parameters:

  • Driven configuration (low-side operation)
  • Dual independent channel architecture
  • N-channel MOSFET gate drive capability
  • Non-inverting input logic
  • Supply voltage range (4.6V ~ 14V)
  • Logic threshold levels (VIL = 0.8V, VIH = 2.2V)
  • Peak output current specifications (3A source, 5A sink)
  • Propagation delay and rise/fall time characteristics
  • Operating temperature range (-40°C ~ 125°C)
  • 8-SOIC package footprint and pinout compatibility

Only parts meeting all these criteria are considered direct functional equivalents. Deviations in any parameter disqualify a part from substitution without circuit redesign.

Parameter Comparison

Parameter LM5110-1M LM5110-1M/NOPB
Manufacturer Texas Instruments National Semiconductor
Product Status Obsolete Active
Driven Configuration Low-Side Low-Side
Number of Drivers 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET
Input Type Non-Inverting Non-Inverting
Voltage - Supply 4.6V ~ 14V 4.6V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V 0.8V, 2.2V
Current - Peak Output (Source, Sink) 3A, 5A 3A, 5A
Rise / Fall Time (Typ) 14ns, 12ns 14ns, 12ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount
RoHS Status RoHS non-compliant Not specified
ECCN EAR99 EAR99
HTSUS 8542.39.0001 8542.39.0001

Engineering Selection Recommendations

The LM5110-1M/NOPB is a direct functional equivalent to the obsolete LM5110-1M. Both devices share identical electrical specifications, package geometry, and operational characteristics across all critical parameters. The primary distinction is product status: the LM5110-1M/NOPB maintains active production status, ensuring availability for new designs and production continuity.

For applications currently using the LM5110-1M, the LM5110-1M/NOPB provides seamless substitution without circuit modification. Pin-for-pin compatibility and matching electrical performance enable direct replacement in existing PCB layouts.

Compliance considerations: The LM5110-1M is classified as RoHS non-compliant. Designers requiring RoHS compliance should verify the compliance status of the LM5110-1M/NOPB with the supplier before final component selection.

Frequently Asked Questions (FAQ)

Q: Can the LM5110-1M/NOPB replace the LM5110-1M in existing designs?

A: Yes. The LM5110-1M/NOPB is a direct substitute. Both devices feature identical electrical specifications, logic thresholds, output current ratings, timing characteristics, and 8-SOIC package footprint. No circuit redesign is required.

Q: What are the key parameters that determine substitution eligibility?

A: Substitution requires equivalence in driven configuration (low-side), channel count (dual independent), gate type (N-channel MOSFET), input logic (non-inverting), supply voltage range (4.6V ~ 14V), logic thresholds (0.8V/2.2V), peak output currents (3A/5A), propagation delay, operating temperature range (-40°C ~ 125°C), and package type (8-SOIC).

Q: Are there any package or pinout differences between these parts?

A: No. Both the LM5110-1M and LM5110-1M/NOPB use the 8-SOIC package with identical 0.154" width and 3.90mm dimensions. Pinout compatibility is guaranteed.

Q: Why is the LM5110-1M classified as obsolete?

A: The LM5110-1M has reached end-of-life status. The LM5110-1M/NOPB remains in active production and is the recommended alternative for new designs and production requirements.

Q: What compliance certifications apply to these parts?

A: Both devices carry the same ECCN (EAR99) and HTSUS (8542.39.0001) classifications. The LM5110-1M is RoHS non-compliant. Verify RoHS compliance status of the LM5110-1M/NOPB with your supplier if compliance is required for your application.

Request Quote (Ships tomorrow)