LM5100CMA Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The LM5100CMA is a half-bridge gate driver IC manufactured by Texas Instruments, designed for driving N-channel MOSFETs in half-bridge configurations. This device operates with a supply voltage range of 9V to 14V and features independent channel control with non-inverting logic inputs. The LM5100CMA is classified as obsolete, making identification of active equivalent parts essential for new designs and production continuity.

Substiute Parts

LM5100CMA
Texas InstrumentsIn Stock: 3661LM5100CMA Datasheet
LM5100CMA
Current Part
HIP2100EIBZ
Renesas Electronics CorporationIn Stock: 25739HIP2100EIBZ Datasheet
HIP2100EIBZ
MFR Recommended
HIP2100IBZ
Renesas Electronics CorporationIn Stock: 21977HIP2100IBZ Datasheet
HIP2100IBZ
MFR Recommended

Key Parameters

Parameter Value
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 9V ~ 14V
Current - Peak Output (Source, Sink) 1A, 1A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 118 V
Operating Temperature -40°C ~ 125°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution for the LM5100CMA is determined by strict equivalence in the following core parameters:

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Input Type: Non-Inverting
  • Package / Case: 8-SOIC form factor
  • Mounting Type: Surface Mount

The substitute parts HIP2100EIBZ and HIP2100IBZ, both manufactured by Renesas Electronics Corporation, meet these core functional and mechanical requirements. Both devices maintain the same half-bridge topology, independent dual-channel architecture, and 8-SOIC package footprint. The HIP2100EIBZ includes an exposed pad variant (8-SOIC-EP), while the HIP2100IBZ uses standard 8-SOIC packaging.

Parameter Comparison

Parameter LM5100CMA HIP2100EIBZ HIP2100IBZ
Manufacturer Texas Instruments Renesas Electronics Renesas Electronics
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent
Number of Drivers 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 9V ~ 14V 9V ~ 14V 9V ~ 14V
Current - Peak Output (Source, Sink) 1A, 1A 2A, 2A 2A, 2A
Input Type Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 118 V 114 V 114 V
Operating Temperature -40°C ~ 125°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC-EP (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 2 (1 Year) 1 (Unlimited)

Engineering Selection Recommendations

The HIP2100IBZ is the direct functional equivalent to the LM5100CMA, offering identical package configuration (8-SOIC without exposed pad) and matching moisture sensitivity level (MSL 1). This part maintains pin-for-pin compatibility and is suitable for direct replacement in existing designs.

The HIP2100EIBZ provides enhanced thermal performance through its exposed pad design (8-SOIC-EP) and is recommended for applications requiring improved heat dissipation. This variant carries MSL 2 classification, requiring controlled storage conditions.

Both Renesas substitutes are active products with ROHS3 compliance, providing long-term availability and regulatory alignment. The substitute parts deliver higher peak output current (2A versus 1A) and extended operating temperature range (-55°C to 150°C versus -40°C to 125°C), offering improved performance margins over the obsolete LM5100CMA.

Frequently Asked Questions (FAQ)

Q: Can HIP2100EIBZ and HIP2100IBZ be used interchangeably with LM5100CMA?

A: Both Renesas parts are functionally equivalent to the LM5100CMA in half-bridge gate driver applications. The primary difference is packaging: HIP2100IBZ uses standard 8-SOIC, while HIP2100EIBZ includes an exposed pad for enhanced thermal management. Selection depends on thermal requirements and PCB layout capabilities.

Q: What are the key differences between HIP2100EIBZ and HIP2100IBZ?

A: The HIP2100EIBZ features an exposed pad variant (8-SOIC-EP) for improved heat dissipation, while HIP2100IBZ uses standard 8-SOIC packaging. Both share identical electrical specifications and pin configurations. HIP2100EIBZ carries MSL 2 (1-year shelf life), while HIP2100IBZ carries MSL 1 (unlimited shelf life).

Q: Are there pin-to-pin compatibility concerns?

A: Both HIP2100 variants maintain the same 8-SOIC pinout as the LM5100CMA, ensuring direct PCB compatibility without layout modifications.

Q: What is the impact of higher peak output current in the substitute parts?

A: The HIP2100 series provides 2A peak output current (source and sink) compared to 1A in the LM5100CMA. This represents improved drive capability and is backward compatible with designs rated for 1A output.

Q: Are the substitute parts RoHS compliant?

A: Yes, both HIP2100EIBZ and HIP2100IBZ are ROHS3 compliant, whereas the LM5100CMA is RoHS non-compliant. This compliance status is relevant for applications subject to RoHS regulations.

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