LM5100BMA Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The LM5100BMA is a half-bridge gate driver IC manufactured by Texas Instruments, designed for driving N-channel MOSFETs in half-bridge configurations. This device operates with a supply voltage range of 9V to 14V and delivers peak output currents of 2A for both source and sink operations. The LM5100BMA is classified as obsolete, making identification of active equivalent parts essential for new designs and production continuity.

Substiute Parts

LM5100BMA

Texas InstrumentsIn Stock: 6164LM5100BMA Datasheet

Current PartRFQ

HIP2100EIBZ

Renesas Electronics CorporationIn Stock: 25739HIP2100EIBZ Datasheet

MFR RecommendedRFQ

HIP2100IBZ

Renesas Electronics CorporationIn Stock: 21977HIP2100IBZ Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the LM5100BMA is determined by the following critical parameters that must remain consistent:

• Driven configuration: Half-bridge topology
• Number of drivers: 2 independent channels
• Gate type: N-channel MOSFET driving capability
• Supply voltage range: 9V ~ 14V compatibility
• Peak output current: 2A source and sink capability
• Input type: Non-inverting logic
• Package type: 8-SOIC form factor
• Bootstrap voltage capability: Minimum 114V

The substitute parts HIP2100EIBZ and HIP2100IBZ, both manufactured by Renesas Electronics Corporation, meet these core functional requirements. Both devices maintain the half-bridge gate driver architecture, dual independent channels, and identical supply voltage specifications. The primary differences between substitutes relate to package variant (exposed pad vs. standard), operating temperature range, and compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

The LM5100BMA is obsolete and no longer in active production. Both HIP2100EIBZ and HIP2100IBZ are active products from Renesas Electronics and provide functional equivalence for half-bridge gate driver applications.

HIP2100IBZ is the primary substitute for direct replacement. It maintains the standard 8-SOIC package without exposed pad, matches the unlimited moisture sensitivity level (MSL 1) of the original part, and provides an extended operating temperature range of -55°C to 150°C. This device is ROHS3 compliant, addressing modern regulatory requirements that the original LM5100BMA does not meet.

HIP2100EIBZ is an alternative variant featuring an exposed pad (8-SOIC-EP package) for improved thermal management. This variant is suitable for applications requiring enhanced heat dissipation. The exposed pad configuration does not affect electrical compatibility but introduces a moisture sensitivity level of 2 (1 year), requiring controlled storage conditions.

Both Renesas substitutes operate within the same 9V to 14V supply voltage range and deliver identical 2A peak output currents. The bootstrap voltage capability of 114V on the Renesas devices is functionally equivalent to the 118V specification of the original part for standard half-bridge applications.

Frequently Asked Questions (FAQ)

Q: Can HIP2100EIBZ and HIP2100IBZ be used interchangeably with LM5100BMA?

A: Both Renesas devices are functionally equivalent substitutes for the obsolete LM5100BMA in half-bridge gate driver applications. They share identical supply voltage ranges, output current ratings, and package footprints. Selection between the two Renesas variants depends on thermal management requirements and moisture sensitivity constraints specific to your application.

Q: What is the difference between HIP2100EIBZ and HIP2100IBZ?

A: The primary difference is the package variant. HIP2100EIBZ uses an 8-SOIC-EP package with an exposed pad for thermal dissipation, while HIP2100IBZ uses a standard 8-SOIC package without exposed pad. HIP2100EIBZ has a moisture sensitivity level of 2 (1 year storage requirement), whereas HIP2100IBZ has MSL 1 (unlimited storage). Both devices are electrically identical.

Q: Are the bootstrap voltage specifications compatible?

A: The LM5100BMA specifies a maximum bootstrap voltage of 118V, while both HIP2100EIBZ and HIP2100IBZ specify 114V. Both specifications are sufficient for standard half-bridge topologies and do not present a compatibility issue for typical applications.

Q: Do the substitute parts require PCB layout modifications?

A: HIP2100IBZ uses the standard 8-SOIC package and requires no PCB modifications. HIP2100EIBZ uses an 8-SOIC-EP package with an exposed pad, which may require PCB layout adjustments to accommodate the thermal pad connection if thermal management is a design consideration.

Q: What compliance certifications apply to the substitute parts?

A: Both HIP2100EIBZ and HIP2100IBZ are ROHS3 compliant, addressing modern regulatory requirements. The original LM5100BMA is RoHS non-compliant. Both Renesas devices are REACH unaffected and carry EAR99 ECCN classification.