LM5100ASD Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The LM5100ASD is a half-bridge gate driver IC manufactured by Texas Instruments, designed for driving N-channel MOSFETs in half-bridge configurations. This device operates with a supply voltage range of 9V to 14V and delivers peak output currents of 3A (source and sink). The LM5100ASD is classified as "Not For New Designs," indicating it has been superseded. Finding equivalent or substitute parts is necessary for applications requiring active product support, improved compliance certifications, or enhanced electrical performance characteristics.

Substiute Parts

LM5100ASD
Texas InstrumentsIn Stock: 2167LM5100ASD Datasheet
LM5100ASD
Current Part
LM5100ASD/NOPB
Texas InstrumentsIn Stock: 1757LM5100ASD/NOPB Datasheet
LM5100ASD/NOPB
Direct
ISL2111ARTZ
Renesas Electronics CorporationIn Stock: 9546ISL2111ARTZ Datasheet
ISL2111ARTZ
MFR Recommended
ISL2111ARTZ-T
Renesas Electronics CorporationIn Stock: 5281ISL2111ARTZ-T Datasheet
ISL2111ARTZ-T
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Part Number LM5100ASD
Manufacturer Texas Instruments
Category Power Management (PMIC)
Description IC GATE DRVR HALF-BRIDGE 10WSON
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 9V ~ 14V
Current - Peak Output (Source, Sink) 3A, 3A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 118 V
Operating Temperature -40°C ~ 125°C (TJ)
Package / Case 10-WDFN Exposed Pad
Supplier Device Package 10-WSON (4x4)
RoHS Status RoHS non-compliant
Product Status Not For New Designs

Substitute Part Grouping Explanation

Substitution eligibility for the LM5100ASD is determined by the following critical parameters:

Core Functional Requirements:

  • Driven Configuration: Half-Bridge
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Input Type: Non-Inverting
  • Package / Case: 10-WDFN Exposed Pad (physical compatibility)

Electrical Compatibility Criteria:

  • Voltage - Supply range must encompass or match the 9V ~ 14V requirement
  • Current - Peak Output (Source, Sink) must meet or exceed 3A for both source and sink
  • High Side Voltage - Max (Bootstrap) must support 118V operation
  • Operating Temperature range must cover -40°C ~ 125°C

Substitute parts are grouped into two categories:

Category 1: Direct Manufacturer Variant LM5100ASD/NOPB is a direct variant from Texas Instruments with identical electrical specifications and package configuration. The primary distinction is improved RoHS3 compliance and Active product status.

Category 2: Cross-Manufacturer Alternatives ISL2111ARTZ and ISL2111ARTZ-T (Renesas Electronics Corporation) are functionally equivalent half-bridge gate drivers with compatible electrical parameters. These parts meet all core functional requirements and offer enhanced performance characteristics in specific parameters.

Parameter Comparison

Parameter LM5100ASD LM5100ASD/NOPB ISL2111ARTZ ISL2111ARTZ-T
Manufacturer Texas Instruments Texas Instruments Renesas Electronics Renesas Electronics
Driven Configuration Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Number of Drivers 2 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting
Voltage - Supply 9V ~ 14V 9V ~ 14V 8V ~ 14V 8V ~ 14V
Logic Voltage - VIL, VIH 2.3V, - 2.3V, - 1.4V, 2.2V 1.4V, 2.2V
Current - Peak Output (Source, Sink) 3A, 3A 3A, 3A 3A, 4A 3A, 4A
High Side Voltage - Max (Bootstrap) 118 V 118 V 114 V 114 V
Rise / Fall Time (Typ) 430ns, 260ns 430ns, 260ns 9ns, 7.5ns 9ns, 7.5ns
Operating Temperature -40°C ~ 125°C -40°C ~ 125°C -40°C ~ 125°C -40°C ~ 125°C
Package / Case 10-WDFN Exposed Pad 10-WDFN Exposed Pad 10-WDFN Exposed Pad 10-WDFN Exposed Pad
Supplier Device Package 10-WSON (4x4) 10-WSON (4x4) 10-TDFN (4x4) 10-TDFN (4x4)
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Not For New Designs Active Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 2 (1 Year) 2 (1 Year)

Engineering Selection Recommendations

LM5100ASD/NOPB (Direct Variant)

This part is the recommended primary substitute for the LM5100ASD. It maintains identical electrical specifications and package configuration while offering Active product status and ROHS3 compliance. Selection of LM5100ASD/NOPB eliminates obsolescence risk and satisfies modern regulatory requirements without requiring circuit redesign.

ISL2111ARTZ and ISL2111ARTZ-T (Cross-Manufacturer Alternatives)

These Renesas Electronics parts are functionally equivalent alternatives suitable for applications where cross-manufacturer sourcing is acceptable. Both variants provide Active product status and ROHS3 compliance. The ISL2111ARTZ is supplied in Tray packaging, while ISL2111ARTZ-T is supplied in Tape & Reel packaging. Selection between these variants depends on assembly process requirements.

Key considerations for ISL2111 selection:

  • Supply voltage range extends to 8V minimum (versus 9V for LM5100ASD), providing broader operational flexibility
  • Peak sink current is rated at 4A (versus 3A for LM5100ASD), offering improved current capability
  • Rise and fall times are significantly faster (9ns and 7.5ns respectively, versus 430ns and 260ns), enabling higher switching frequencies
  • Bootstrap voltage maximum is 114V (versus 118V), representing a 4V reduction in maximum operating range
  • Moisture Sensitivity Level is MSL 2 (1 Year) versus MSL 1 (Unlimited), requiring controlled storage conditions

Frequently Asked Questions (FAQ)

Q: Can LM5100ASD/NOPB be used as a direct replacement for LM5100ASD?

A: Yes. LM5100ASD/NOPB is a direct variant with identical electrical specifications and package configuration. The primary differences are improved RoHS3 compliance and Active product status. No circuit modifications are required.

Q: What are the key differences between LM5100ASD and ISL2111ARTZ?

A: Both devices are half-bridge gate drivers with compatible core functionality. ISL2111ARTZ offers extended supply voltage range (8V minimum versus 9V), higher sink current capability (4A versus 3A), and significantly faster switching times (9ns/7.5ns versus 430ns/260ns). The bootstrap voltage maximum is slightly lower (114V versus 118V). ISL2111ARTZ requires MSL 2 storage conditions versus MSL 1 for LM5100ASD.

Q: What is the difference between ISL2111ARTZ and ISL2111ARTZ-T?

A: Both parts are electrically identical. The difference is packaging format: ISL2111ARTZ is supplied in Tray packaging, while ISL2111ARTZ-T is supplied in Tape & Reel packaging. Selection depends on assembly process requirements and handling procedures.

Q: Are there any compatibility concerns when switching from LM5100ASD to ISL2111ARTZ?

A: Both devices use the same 10-WDFN package footprint and are pin-compatible. However, the faster switching times of ISL2111ARTZ (9ns/7.5ns versus 430ns/260ns) may affect circuit timing behavior in applications sensitive to gate driver propagation delays. The lower bootstrap voltage maximum (114V versus 118V) must be verified against application requirements.

Q: Why is LM5100ASD marked as "Not For New Designs"?

A: This designation indicates the part has been superseded by newer alternatives. LM5100ASD/NOPB is the recommended successor from Texas Instruments, offering improved compliance and active manufacturer support.

Q: What storage conditions are required for ISL2111ARTZ?

A: ISL2111ARTZ has Moisture Sensitivity Level 2 (1 Year), requiring controlled storage conditions to prevent moisture absorption. LM5100ASD has MSL 1 (Unlimited), allowing indefinite storage without special handling. Verify storage and handling procedures before transitioning to ISL2111ARTZ.

Request Quote (Ships tomorrow)