LM158WDT Equivalent & Substitute Parts

Part Overview

The LM158WDT is a general-purpose operational amplifier manufactured by STMicroelectronics in an 8-SOIC surface-mount package. This dual-channel amplifier is designed for applications requiring low-cost, general-purpose amplification across a wide supply voltage range of 3V to 30V. The device is qualified to AEC-Q100 automotive standards and maintains active product status with 6028 units in current inventory. Substitute parts are identified to provide design flexibility when the primary part is unavailable, when alternative performance characteristics are required, or when specific packaging or supplier preferences necessitate component alternatives.

Substiute Parts

LM158WDT
STMicroelectronicsIn Stock: 6050LM158WDT Datasheet
LM158WDT
Current Part
ADA4062-2ARZ
Analog Devices Inc.In Stock: 3250ADA4062-2ARZ Datasheet
ADA4062-2ARZ
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ADA4062-2ARZ-R7
Analog Devices Inc.In Stock: 17926ADA4062-2ARZ-R7 Datasheet
ADA4062-2ARZ-R7
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ADA4062-2BRZ
Analog Devices Inc.In Stock: 930ADA4062-2BRZ Datasheet
ADA4062-2BRZ
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AS358MTR-E1
Diodes IncorporatedIn Stock: 264218AS358MTR-E1 Datasheet
AS358MTR-E1
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AS358MTR-G1
Diodes IncorporatedIn Stock: 300318AS358MTR-G1 Datasheet
AS358MTR-G1
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BA4558FJ-GE2
Rohm SemiconductorIn Stock: 745BA4558FJ-GE2 Datasheet
BA4558FJ-GE2
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LM1458M/NOPB
Texas InstrumentsIn Stock: 1682LM1458M/NOPB Datasheet
LM1458M/NOPB
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LM1458MX/NOPB
National SemiconductorIn Stock: 24936LM1458MX/NOPB Datasheet
LM1458MX/NOPB
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LM258DG4
Texas InstrumentsIn Stock: 1476LM258DG4 Datasheet
LM258DG4
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LM258DR
UMWIn Stock: 455175LM258DR Datasheet
LM258DR
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LM258DR2G
onsemiIn Stock: 505253LM258DR2G Datasheet
LM258DR2G
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LM258DRG3
Texas InstrumentsIn Stock: 30302LM258DRG3 Datasheet
LM258DRG3
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LM258DRG4
Texas InstrumentsIn Stock: 22804LM258DRG4 Datasheet
LM258DRG4
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LM2904AQS-13
Diodes IncorporatedIn Stock: 12166LM2904AQS-13 Datasheet
LM2904AQS-13
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LM2904QS-13
Diodes IncorporatedIn Stock: 3810LM2904QS-13 Datasheet
LM2904QS-13
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LM2904S-13
Diodes IncorporatedIn Stock: 3694LM2904S-13 Datasheet
LM2904S-13
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LM2904VDR2G
onsemiIn Stock: 48760LM2904VDR2G Datasheet
LM2904VDR2G
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LM2904VQDR
Rohm SemiconductorIn Stock: 25427LM2904VQDR Datasheet
LM2904VQDR
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LM2904VQDRG4
Texas InstrumentsIn Stock: 2429LM2904VQDRG4 Datasheet
LM2904VQDRG4
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LM358AM
onsemiIn Stock: 1545LM358AM Datasheet
LM358AM
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LM358AM/NOPB
Texas InstrumentsIn Stock: 5677LM358AM/NOPB Datasheet
LM358AM/NOPB
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LM358AMX/NOPB
Texas InstrumentsIn Stock: 2125LM358AMX/NOPB Datasheet
LM358AMX/NOPB
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LM358DG4
Texas InstrumentsIn Stock: 2140LM358DG4 Datasheet
LM358DG4
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LM358DR
Rohm SemiconductorIn Stock: 825241LM358DR Datasheet
LM358DR
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LM358DRG3
Texas InstrumentsIn Stock: 1406LM358DRG3 Datasheet
LM358DRG3
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LM358EDR2G
onsemiIn Stock: 40505LM358EDR2G Datasheet
LM358EDR2G
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LM358M
Fairchild SemiconductorIn Stock: 7131LM358M Datasheet
LM358M
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LM358M/NOPB
Texas InstrumentsIn Stock: 4247LM358M/NOPB Datasheet
LM358M/NOPB
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LM358MX
Rohm SemiconductorIn Stock: 17172LM358MX Datasheet
LM358MX
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LM358MX/NOPB
Texas InstrumentsIn Stock: 74384LM358MX/NOPB Datasheet
LM358MX/NOPB
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LM358S-13
Diodes IncorporatedIn Stock: 20509LM358S-13 Datasheet
LM358S-13
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MC1458DE4
Texas InstrumentsIn Stock: 1035MC1458DE4 Datasheet
MC1458DE4
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MC1458DR
Texas InstrumentsIn Stock: 5733MC1458DR Datasheet
MC1458DR
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MC1458PSR
Texas InstrumentsIn Stock: 3614MC1458PSR Datasheet
MC1458PSR
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MC33172DR2G
onsemiIn Stock: 25376MC33172DR2G Datasheet
MC33172DR2G
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MC33172VDR2G
onsemiIn Stock: 2433MC33172VDR2G Datasheet
MC33172VDR2G
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OP292GSZ
Analog Devices Inc.In Stock: 1646OP292GSZ Datasheet
OP292GSZ
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OP292GSZ-REEL
Analog Devices Inc.In Stock: 9326OP292GSZ-REEL Datasheet
OP292GSZ-REEL
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TL062ACD
Texas InstrumentsIn Stock: 2303TL062ACD Datasheet
TL062ACD
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TL062ACDR
Texas InstrumentsIn Stock: 1759TL062ACDR Datasheet
TL062ACDR
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TL062ACPSR
Texas InstrumentsIn Stock: 2675TL062ACPSR Datasheet
TL062ACPSR
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TL062ID
STMicroelectronicsIn Stock: 4533TL062ID Datasheet
TL062ID
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TL062IDR
Texas InstrumentsIn Stock: 17740TL062IDR Datasheet
TL062IDR
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TLE2062MD
Texas InstrumentsIn Stock: 7714TLE2062MD Datasheet
TLE2062MD
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Key Parameters

Parameter Value Unit
Amplifier Type General Purpose
Number of Circuits 2
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Slew Rate 0.6 V/µs
Gain Bandwidth Product 1.1 MHz
Current - Input Bias 20 nA
Voltage - Input Offset 2 mV
Current - Supply 700 µA
Current - Output / Channel 40 mA
Voltage - Supply Span (Min) 3 V
Voltage - Supply Span (Max) 30 V
Operating Temperature -55°C ~ 125°C
Grade Automotive
Qualification AEC-Q100
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the LM158WDT are grouped into two functional categories based on amplifier type and electrical performance characteristics:

Category 1: General-Purpose Amplifier Substitutes These parts maintain the same general-purpose amplifier topology and are compatible with applications requiring equivalent input bias current (20 nA), input offset voltage (2 mV), output current per channel (40 mA), and supply voltage range compatibility. Parts in this category include AS358MTR-E1, AS358MTR-G1, BA4558FJ-GE2, LM1458M/NOPB, LM1458MX/NOPB, and LM258DG4. These substitutes differ in slew rate, gain bandwidth product, supply current, and operating temperature ranges but maintain functional equivalence for general-purpose amplification circuits.

Category 2: J-FET Amplifier Substitutes These parts employ J-FET input stages and are suitable for applications requiring significantly lower input bias current (2 pA versus 20 nA). The ADA4062-2ARZ, ADA4062-2ARZ-R7, and ADA4062-2BRZ variants offer enhanced performance characteristics including higher slew rate (3.3 V/µs), higher gain bandwidth product (1.4 MHz), and lower input offset voltage. These substitutes are compatible with higher minimum supply voltages (8V minimum) and are appropriate for precision applications where input bias current and offset voltage are critical parameters.

Key Parameters Determining Substitution:

  • Package compatibility: 8-SOIC surface-mount form factor
  • Dual-channel configuration (2 circuits)
  • Supply voltage range overlap
  • Input bias current and offset voltage specifications
  • Output current capability per channel
  • Operating temperature range requirements
  • Compliance certifications (RoHS3, REACH)

Parameter Comparison

Part Number Manufacturer Amplifier Type Slew Rate (V/µs) GBW (MHz) Input Bias (nA) Input Offset (mV) Supply Current (µA) Output Current (mA) Supply Min (V) Supply Max (V) Temp Range (°C) Package Status
LM158WDT STMicroelectronics General Purpose 0.6 1.1 20 2 700 40 3 30 -55 ~ 125 8-SOIC Active
ADA4062-2ARZ Analog Devices Inc. J-FET 3.3 1.4 0.002 0.75 165 20 8 36 -40 ~ 125 8-SOIC Active
ADA4062-2ARZ-R7 Analog Devices Inc. J-FET 3.3 1.4 0.002 0.75 165 20 8 36 -40 ~ 125 8-SOIC Active
ADA4062-2BRZ Analog Devices Inc. J-FET 3.3 1.4 0.002 0.5 165 20 8 36 -40 ~ 125 8-SOIC Active
AS358MTR-E1 Diodes Incorporated General Purpose 20 2 700 40 3 36 -40 ~ 85 8-SOIC Active
AS358MTR-G1 Diodes Incorporated General Purpose 20 2 700 40 3 36 -40 ~ 85 8-SOIC Active
BA4558FJ-GE2 Rohm Semiconductor General Purpose 1 2 60 0.5 3000 40 8 30 -40 ~ 85 8-SOIC Active
LM1458M/NOPB Texas Instruments General Purpose 0.5 1 200 1 3000 36 36 0 ~ 70 8-SOIC Active
LM1458MX/NOPB National Semiconductor General Purpose 0.5 1 200 1 3000 36 36 0 ~ 70 8-SOIC Active
LM258DG4 Texas Instruments General Purpose 0.3 1.1 20 3 500 40 3 32 -25 ~ 85 8-SOIC Obsolete
LM258DR UMW General Purpose 45 2 1000 40 32 -25 ~ 85 8-SOIC Active

Engineering Selection Recommendations

For Direct Functional Replacement: The AS358MTR-E1 and AS358MTR-G1 (Diodes Incorporated) provide the closest functional equivalence to the LM158WDT. Both maintain identical input bias current (20 nA), input offset voltage (2 mV), supply current (700 µA), and output current per channel (40 mA) specifications. These parts are available in active product status with high inventory levels (264,200 and 300,300 units respectively). The primary difference is the reduced maximum operating temperature (85°C versus 125°C) and extended maximum supply voltage (36V versus 30V). Both parts are RoHS3 compliant with MSL 3 rating.

For Automotive and Extended Temperature Applications: The LM158WDT remains the optimal choice when AEC-Q100 automotive qualification and extended temperature range (-55°C to 125°C) are mandatory requirements. No substitute parts in the provided list maintain both automotive qualification and the full temperature range of the primary part.

For Precision Applications with Low Input Bias Current: The ADA4062-2ARZ-R7 (Analog Devices Inc.) is recommended when input bias current must be minimized (2 pA versus 20 nA). This J-FET input amplifier offers superior input characteristics with 0.75 mV input offset voltage and higher slew rate (3.3 V/µs). The ADA4062-2BRZ variant provides even lower input offset voltage (0.5 mV). These parts require minimum supply voltage of 8V and are suitable for -40°C to 125°C operating range. Inventory availability is substantial (17,915 units for the -R7 variant).

For Cost-Optimized Designs: The LM258DR (UMW) offers active product status with the highest inventory availability (455,100 units) among general-purpose substitutes. This part maintains 40 mA output current per channel and 2 mV input offset voltage but operates within -25°C to 85°C temperature range and requires verification of supply voltage minimum specification.

Compliance Considerations: All recommended substitute parts maintain RoHS3 compliance and REACH unaffected status. Moisture sensitivity levels vary between MSL 1 (unlimited) and MSL 3 (168 hours), which may impact storage and handling requirements in manufacturing environments.

Frequently Asked Questions (FAQ)

Q: Can the AS358MTR series directly replace the LM158WDT in all applications? A: The AS358MTR-E1 and AS358MTR-G1 provide electrical equivalence for general-purpose amplification circuits. The primary limitation is the reduced maximum operating temperature (85°C versus 125°C for the LM158WDT). Applications operating above 85°C require the primary part or alternatives with extended temperature ratings. The extended maximum supply voltage (36V versus 30V) of the AS358 series provides additional design margin.

Q: What is the difference between ADA4062-2ARZ, ADA4062-2ARZ-R7, and ADA4062-2BRZ? A: All three variants are J-FET input amplifiers with identical slew rate (3.3 V/µs) and gain bandwidth product (1.4 MHz). The primary difference is input offset voltage: ADA4062-2ARZ and ADA4062-2ARZ-R7 specify 750 µV, while ADA4062-2BRZ specifies 500 µV. The -R7 suffix indicates Cut Tape & Digi-Reel packaging with significantly higher inventory (17,915 units). The standard ADA4062-2ARZ is supplied in Tube packaging (3,200 units), and the -BRZ variant is also in Tube packaging (919 units).

Q: Are the LM1458M/NOPB and LM1458MX/NOPB interchangeable? A: Both parts share identical electrical specifications (0.5 V/µs slew rate, 1 MHz gain bandwidth product, 200 nA input bias current). The LM1458M/NOPB is manufactured by Texas Instruments, while the LM1458MX/NOPB is from National Semiconductor. Both are RoHS3 compliant and operate within 0°C to 70°C temperature range. The LM1458MX/NOPB has higher inventory availability (24,832 units versus 1,630 units).

Q: Why does the LM258DG4 show obsolete product status? A: The LM258DG4 is listed as obsolete by Texas Instruments. While it maintains electrical compatibility with the LM158WDT (20 nA input bias current, 3 mV input offset voltage, 40 mA output current), its obsolete status means it is no longer in active production. This part should not be selected for new designs. Active alternatives include the AS358MTR series or the ADA4062 J-FET variants.

Q: What packaging options are available for substitute parts? A: All substitute parts maintain the 8-SOIC (0.154", 3.90mm Width) surface-mount package form factor, ensuring mechanical compatibility. Packaging variations include Tube, Cut Tape (CT) & Digi-Reel, and Tape & Reel (TR) formats. The LM158WDT is supplied in Tape & Reel format. AS358MTR-G1 matches this packaging format, while AS358MTR-E1 uses Cut Tape & Digi-Reel. Selection should consider manufacturing process requirements and inventory management practices.

Q: Can J-FET input amplifiers (ADA4062 series) be used in place of bipolar input amplifiers (LM158WDT)? A: J-FET input amplifiers offer superior input bias current characteristics (2 pA versus 20 nA) and lower input offset voltage (0.75 mV or 0.5 mV versus 2 mV). However, they require higher minimum supply voltage (8V versus 3V). J-FET substitution is appropriate for precision measurement and low-bias-current applications. Applications designed for 3V to 8V supply operation cannot use J-FET variants without circuit redesign.

Q: What is the significance of MSL (Moisture Sensitivity Level) ratings? A: MSL 1 (Unlimited) indicates the component has no moisture sensitivity restrictions and can be stored indefinitely without special precautions. MSL 3 (168 Hours) requires that components be used within 168 hours of package opening or stored in controlled humidity environments. The LM158WDT has MSL 1 rating. AS358MTR variants have MSL 3 rating, which may require additional moisture control measures in manufacturing environments with extended component exposure times.

Q: Are all substitute parts RoHS3 compliant? A: Yes, all substitute parts listed maintain RoHS3 compliance status. The LM158WDT is also RoHS3 compliant. All parts are REACH unaffected, indicating they do not contain substances of very high concern (SVHC) on the REACH candidate list.

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